● Magnetic and Magneto-transport Properties of Solid Phase Epitaxially Grown Si:Ce Films
T. Yokota, N. Fujimura, T. Ito
J. Appl. Phys., 93(2003) 4045-4048
http://scitation.aip.org/content/aip/journal/jap/93/7/10.1063/1.1559436

● Ferroelectric Properties of YMnO₃ Epitaxial Films for Ferroelectric-Gate Field Effect Transistors
D. Ito, N. Fujimura, T. Yoshimura, T. Ito
J. Appl. Phys., 93(2003)5563-5567
http://scitation.aip.org/content/aip/journal/jap/93/9/10.1063/1.1564862

● Ferromagnetic and Ferroelectric Behaviors of A Site Substituted YMnO₃ Based Epitaxial Thin Films
N. Fujimura, D. Ito, H. Sakata T. Yoshimura, T. Yokota, T. Ito
J. Appl. Phys., 93(2003) 6990-6992
http://scitation.aip.org/content/aip/journal/jap/93/10/10.1063/1.1556165

● Formation of Two-Dimensional Electron Gas and the Magneto-Transport Behavior of ZnMnO/ZnO Heterostructure
T. Edahiro, N. Fujimura, T. Ito
J. Appl. Phys., 93(2003) 7673-7675
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5035225&abstractAccess=no&userType=inst

● The Effect of Carrier for Magnetic and Magneto-transport Properties of Si:Ce Films
T.Yokota, N.Fujimura, T.Wada, S. Hamasaki, T.Ito
J. Appl. Phys. 93(2003)7679-7681
http://scitation.aip.org/content/aip/journal/jap/93/10/10.1063/1.1556116

● Influence of Schottky and Poole-Frenkel emission on the retention property of YMnO₃ based Metal/Ferroelectric/Insulator/Semiconductor capacitors
D. Ito, N.Fujimura, T.Yoshimura, T.Ito
J. Appl. Phys., 94(2003)4036-4041
http://scitation.aip.org/content/aip/journal/jap/94/6/10.1063/1.1601292

● Improvement of Surface Morphology and Dielectric Property of YMnO₃ Films
H. Sakata, D. Ito, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys., 42(2003) 6003-6006
http://jjap.jsap.jp/link?JJAP/42/6003/

● Polarization Hysteresis Loops of Ferroelectric Gate Capacitors Measured by Sawyer-Tower Circuit
T. Yoshimura, N. Fujimura
Jpn. J. Appl. Phys., 42(2003)6011-6014
http://jjap.jsap.jp/link?JJAP/42/6011/

●Magnetic and dielectric properties of epitaxially grown BaFeO₃ thin films on SrTiO₃ single-crystal substrates
T.Matsui,H.Tanaka,E,Taketani,N.Fujimura, T.Ito, K.Morii
Journal of the Korean Physical Society,42, Issue SUPPL.,S1378(Apl,2003)

http://cat.inist.fr/?aModele=afficheN&cpsidt=14903131

●Magnetic properties of highly resistive BaFeO₃ thin films epitaxially grown on SrTiO₃ single-crystal substrates
T. Matsui, E. Taketani, N. Fujimura, T. Ito and K. Morii
J. Appl. Phys., 93(May 2003) 6993
http://scitation.aip.org/content/aip/journal/jap/93/10/10.1063/1.1556166

●Investigation of retention properties for YMnO₃ based metal ferroelectric insulator semiconductor capacitors
T.Yoshimura, D.Ito, H.Sakata, N.Shigemitsu, K.Haratake, A.Ashida, N.Fujimura
Materials Research Society Symposium – Proceedings 784(2003)479-484
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8001059&fulltextType=RA&fileId=S1946427400096998

● The Progress of the YMnO₃/Y₂O₃/Si System for a Ferroelectric Gate Field Effect Transistor
N. Fujimura，D. Ito，T. Ito
Ferroelectrics，271(2002) 229-234
http://www.tandfonline.com/doi/abs/10.1080/00150190211525

● Electro-optic Property of ZnO : X (X = Li,Mg) Thin Films
T. Nagata，T. Shimura，A. Ashida，N. Fujimura，T. Ito
Journal of Crystal Growth，237-239(2002)533-537
http://www.sciencedirect.com/science/article/pii/S0022024801019571

● Retention Property Analysis of Epitaxially Grown YMnO₃/Y₂O₃/Si Capacitor
D. Ito，N. Fujimura，K. Kakuno，T. Ito
Ferroelectrics，271(2002)87-92
https://www.researchgate.net/publication/233344132

● Growth Process and Interfacial Structure of Epitaxial Y₂O₃/Si Thin Films Deposited by Pulsed Laser Deposition
K. Kakuno，D. Ito，N. Fujimura，T. Matsui，T. Ito
Journal of Crystal Growth，237 Part 1(2002) 487-491
http://www.sciencedirect.com/science/article/pii/S0022024801019492

● Thin Film Crystal Growth of BaZrO₃ at Low Oxygen Partial Pressure
Y. Kitano，T. Matsui，N. Fujimura，K. Morii，T. Ito
Journal of Crystal Growth，243 Part 1(2002) 164-169
http://www.sciencedirect.com/science/article/pii/S002202480201480X

● Ce Concentration Dependence on the Magnetic and Transport Properties of Ce Doped Si Epitaxial Films Prepared by Molecular Beam Epitaxy
T. Yokota，N. Fujimura，T. Wada，S. Hamasaki，T. Ito
Journal of Applied Physics, 91-10(2002) 7905-7907
http://scitation.aip.org/content/aip/journal/jap/91/10/10.1063/1.1451878

● Electro-optic Effect in Epitaxial ZnO:Mn Thin Films
T. Nagata，A. Ashida，Y. Takagi，N. Fujimura，T. Ito
Japanese Journal of Applied Physics，41(2002)6916-6918
http://jjap.jsap.jp/link?JJAP/41/6916/

● Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor Si_1-xCe_x films
T. Yokota，N. Fujimura，T. Wada，S. Hamasaki，T. Ito
Applied Physics Letters，81(2002) 4023-4025
http://scitation.aip.org/content/aip/journal/apl/81/21/10.1063/1.1524030

● 焼却煤じんの溶融処理
大西忠一，宮武和孝，原田浩希，黒谷臣知仁
高温学会誌，28-4(2002)181-186

● Thermit Reaction Applied to Waste Treatment.
H. Harada，T. Ohnishi，K. Miyatake，N. Takeda，M. Takaoka
Proc. of 2nd Intern. Conf. on Combustion, Incineration/Pyrolysis and Emission. , 505-512(2002)

●Structural, dielectric, and magnetic properties of epitaxially grown BaFeO₃ thin films
on (100) SrTiO₃ single-crystal substrates
T. Matsui, H. Tanaka, N. Fujimura, T. Ito, H. Mabuchi, and K. Morii
Appl. Phys. Lett. 81 (2002)2764
http://scitation.aip.org/content/aip/journal/apl/81/15/10.1063/1.1513213

●Crystal Growth and Interfacial Characterization of Dielectric BaZrO₃ Thin Films
on Si Substrates
Toshiyuki MATSUI, Yasuhiro KITANO, Norifumi FUJIMURA, Kenji MORII and Taichiro ITO
Jpn. J. Appl. Phys.  41 (2002) 6639–6642
http://jjap.jsap.jp/link?JJAP/41/6639/

●Effect of A-site substitution on the magnetic and dielectric behaviors of YMnO₃ based ferroelectric thin films
N.Fujimura, H.Sakata, D.Ito, T.Yokota, T.Ito
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics,page219; Nara; Japan; (28 May 2002 )
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1195909

●Siの磁性
藤村　紀文
マテリアルインテグレーション　15巻5号（2002）19-24

●YMnO₃/Y₂O₃/Siエピタキシャル構造を用いたMFISキャパシタの物性
藤村　紀文、吉村　武、伊藤　大輔、伊藤　太一郎
電気学会　電子材料研究会資料　EFM-02-15(2002年6月）39-44

●The Effect of Leakage Current on the Retention Property of YMnO₃ Based MFIS Capacitor
Daisuke Ito, Norifumi Fujimura& Taichiro Ito
Integrated Ferroelectrics ,49,1(2002)41-49
http://www.tandfonline.com/doi/pdf/10.1080/713718364

●Solid State Growth and Its Application to Ternary Compounds
A.Ashida，N. Yamamoto，T. Ito
Japanese Research Review for Pioneering: Ternary and Multinary Compounds
in the 21st Century”, (The Institute of Pure and Applied Physics, Tokyo, 57-61（2001).

● Magnetic and magneto-transport properties of ZnO:Ni films
T. Wakano, N. Fujimura, N. Abe, Y. Morinaga, A. Ashida, T. Ito
Physica E, 10, 1-3 (2001) 260-264
http://www.sciencedirect.com/science/article/pii/S1386947701000959

● Magnetic properties of Er and Er,O-doped GaAs grown by organometallic vapor phase epitaxy
Y. Morinaga, T. Edahiro, N. Fujimura, T. Ito, T. Koide, Y. Fujiwara, Y. Takeda
Physica E, 10, 1-3(2001)391-394
http://www.sciencedirect.com/science/article/pii/S1386947701001230

● Annealing behavior of electrical properties in plasma-exposed Ti/p-Si interfaces
T. Yamaguchi, H. Kato, N. Fujimura, T. Ito
Thin Solid Films, 396, 1-2(2001) 119-125
http://www.sciencedirect.com/science/article/pii/S0040609001012457

● Ferroelectricity in Li-doped ZnO:X thin films and their application for the optical switching devices
T. Nagata, T. Shimura, Y. Nakano, A. Ashida, N. Fujimura, T. Ito
Jpn. J. Appl. Phys. 40, 9B(2001) 5615-5618
http://jjap.jsap.jp/link?JJAP/40/5615/

● Si:Ce系希薄磁性半導体薄膜の新規な物性
藤村紀文,　横田壮司,　伊藤 太一郎
固体物理　36巻9号(2001) 61-68

● Crystal growth and dielectric properties of BaZrO₃ thin films on Si substrates
N. Fujimura, Y. Kitano, T. Matsui, K. Morii, T. Ito
Proc. of the 8th International Workshop on Oxide Electronics (2001)

● Magnetic and Magneto-Transport Properties of Diluted Magnetic Semiconductor, ZnO:Ni
T. Edahiro, N. Fujimura, A.Ashida, T. Ito
Proc. of the 8th International Workshop on Oxide Electronics (2001)

●Detailed structural analysis of Ce doped Si thin films
T.Yokota,N.Fujimura,Y.Morinaga,T.Ito
Proceedings of the First International Conference on the Physics and Applications of Spin-Related Phenomena in Semiconductors
Physica E: Low-dimensional Systems and Nanostructures10,1–3(May 2001)237–241
http://www.sciencedirect.com/science/article/pii/S138694770100090X

●Magnetic properties of Er andEr, O-dopedGaAs grown by organometallic vapor phase epitaxy
Y. Morinagaa, T. Edahiroa, N. Fujimuraa, T. Itoa, T. Koideb, Y. Fujiwarab, Y. Takedab
Physica E 10 ,1-3(2001)391–394
http://ac.els-cdn.com/S1386947701001230/1-s2.0-S1386947701001230-main.pdf?_tid=4119617e-620b-11e3-8ad3-00000aacb35f&acdnat=1386728802_c91c08e2deed2636c63f493ef997470b

●Magnetic and magneto-transport properties of ZnO :Ni &lms
T. Wakano, N. Fujimura , Y. Morinaga, N. Abe, A. Ashida, T. Ito
Physica E 10 (2001) 260–264
http://ac.els-cdn.com/S1386947701000959/1-s2.0-S1386947701000959-main.pdf?_tid=832bf61c-620b-11e3-b65e-00000aab0f27&acdnat=1386728913_bab21244767145c6be3c4579991e1f42

●Improvement of Retention Property of YMnO₃/Y₂O₃/Si MFIS Capacitor
Norifumi Fujimura, Daisuke Ito, kousuke Kakkuno, Taichiro Ito
MRS symposium procssdings 655.cc3.11(2001)1-6
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8226106&fulltextType=RA&fileId=S1946427400623849

● Effect of plasma-induced damage on interfacial reactions of titanium thin films on silicon surface
T. Yamaguchi, N. Fujimura, A. Hama, H. Niko and T. Ito
Applied Physics Letters, 76, 17(2000) 2358-2360
http://scitation.aip.org/content/aip/journal/apl/76/17/10.1063/1.126345

● Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C-V measurement; ferroelectricity in YMnO₃/Y₂O₃/Si structure
T. Yoshimura, N. Fujimura and T. Ito
Journal of Applied Physics, 87, 7(2000)3444-3449
http://scitation.aip.org/content/aip/journal/jap/87/7/10.1063/1.372364

● Improvement Y₂O₃/Si interface for FeRAM application
D. Ito, T. Yoshimura, N. Fujimura and T. Ito
Applied Surface Science, 159-160(2000) 138-142
http://www.sciencedirect.com/science/article/pii/S0169433200000854

● Influence of reactive ion etching damage on the schottky barrier hight of Ti/p-Si interface.
N. Fujimura, T. Yamaguchi, H.Kato, and T. Ito
Applied Surface Science; 159-160(2000)186-190
http://www.sciencedirect.com/science/article/pii/S0169433200000696

● 廃棄物処理マルチスメルターのシミュレーション
張　興和、高橋　礼二郎、八木　順一郎、大西　忠一、久米　正一
高温学会誌, 26(2000) 306-315

● Initial stage of thin film growth of pulsed laser deposited YMnO₃
Daisuke Ito, Norifumi Fujimura, Taichiro Ito
Jpn. J. Appl. Phys., 39(2000) 5525
http://jjap.jsap.jp/link?JJAP/39/5525/

● Effects of excess Si, excess Mg and Fe on precipitation in 6061 aluminum　alloys during recycling process.
A. Yamamoto, H.Tsubakino, A. Suehiro, A. Watanabe, T. Ohnishi and M. Kanno
Proc. of 7th Intern. Conf. on Aluminum Alloys (2000) 1-6
https://www.researchgate.net/publication/250338493

● Small-sized blust furnace system for waste as resources.
K. Uehara, K. Miyatake, T. Ohnishi, S. Kume and H. Harada
Proc. of Intern. Conf. on Steel and Society (2000)  1-6

● Precipitation in 6061 aluminum alloys containing intermetallic inclusion.
A. Yamamoto, H. Tsubakino, A. Suehiro, A. Watanabe, A. Noguchi, T. Ohnishi and M. Kanno
Proc. on 2nd Intern. Sym. on Designibg, Processing and Properties of Advanced Engineering Materials (2000)  1-8

● Evaluation of ferroelectricity in MFIS type Capacitor using pulsed C-V measurements
N. Fujimura, T. Yoshimura and T. Ito
Materials Research Soc. Symposium Proceedings, 596(2000)407-412
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8053923&fulltextType=RA&fileId=S1946427400203710

●Origin of Leakage Current of YMnO₃ Thin Films Prepared by the Sol-Gel Method
Hiroya Kitahara, Kiyoharu Tadanaga, Tsutomu Minami, Norifumi Fujimura, Taichiro Ito
Materials Research Soc. Symposium Proceedings, 596(2000)481-486
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8054098&fulltextType=RA&fileId=S1946427400203801

● Si:Ce薄膜における新規な磁気輸送現象
藤村　紀文、横田　壮司、森永　泰規、伊藤　太一郎
「スピン制御による半導体超構造の新展開」研究成果論文集(2000) 34-37

● Y₂O₃/Si界面の電気的評価とその強誘電体メモリーへの応用
藤村　紀文、伊藤　大輔、伊藤　太一郎
極薄シリコン酸化膜の形成・評価・信頼性シンポジウム講演論文集(2000)105-108

●Preparation and Ferroelectric Properties of YMnO₃ Thin Films with c-Axis Preferred Orientation by the Sol-Gel Method
H. Kitahata, K.Tadanaga, T.Minami, N.Fujimura
Journal of Sol-Gel Science and Technology 19(2000) 589–593
http://link.springer.com/article/10.1023%2FA%3A1008761327562

●Effect of Carrier Concentration on the Magnetic Behavior of Ferroelectric YMnO₃ Ceramics and Thin Films
N.Fujimura ,S.Yamamori, A.Nakamoto, D.Ito, T.Yokota, T.Ito
Proceedings of the 2000 12th IEEE International Symposium on(Vol.2)(2000)
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=942398&abstractAccess=no&userType=inst

●Magnetic and magneto-transport properties of Ce doped Si thin films
N.Fujimura, T.Yokota, Y.Morinaga, T.Ito
Proceedings 25th International Conference of Physics Semicond.Osaka2000(2000)1467-1488

● Magnetic properties of dilutely Ce-doped Si
Y. Morinaga, N. Fujimura, T. Yokota, T. Ito Symposium
Proc. of Materials Research Society Spring Meeting (1999) 183

● Variety of spin structure in Si:Ce
N. Fujimura, Y. Morinaga, T. Yokota, T. Ito Symposium
Proc. of Materials Research Society Spring Meeting Abstracts (1999) 182

● YMnO₃ and YbMnO₃ thin films for FET type FeRAM application
N. Fujimura, T. Yoshimura, D. Ito, T. Ito
Symposium Proc. of Materials Research Society, 574 (1999) 317-322
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8043773

● Fabrication and dielectric properties of ZnO:X thin films by pulsed laser deposition method.
T. Shimura, T. Wakano, N. Fujimura, T. Ito
Technical Report of the Institute of Electronics Information and Communication Engineering ED98-250 SDM98-203(1999)27-32
http://ci.nii.ac.jp/els/110003200710.pdf?id=ART0003626673&type=pdf&lang=jp&host=cinii&order_no=&ppv_type=0&lang_sw=&no=1384236025&cp=

● Electric and magnetic properties of Ce doped Si
T.Yokota, Y. Morinaga, N. Fujimura ,T. Ito
Symposium Proc. of Materials Research Society Spring Meeting Abstracts (1999)183

● Exotic doping for ZnO thin films: possibility of monolithic optical intergrated circuit.
N. Fujimura, T. Shimura, T. Wakano, A. Ashida,　T. Ito
Symposium Proc. of Materials Research Society　574(1999) 317-322
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8043961

● Detailed C-V analysis for YbMnO₃/Y₂O₃/Si structure
T. Yoshimura, N. Fujimura, D. Ito, T. Ito
Symposia proc. of Materials Research Society　574(1999) 359-364
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8044090

● Si:Ce薄膜の磁気輸送異常
藤村紀文,　横田壮司,　森永泰規,　伊藤 太一郎
スピン制御による半導体超構造の新展開 研究報告会　論文集　13-14 (1999)

● Analysis of C-V behavior for RMnO₃ (R: rare earth element)/Y₂O₃/Si
T. Yoshimura, N. Fujimura, T. Ito
Technical Report of the Institute of Electronics Information and Communication Engineering ED98-250 SDM98-203(1999) 71－76

● Anomalous Magneto-transport  Behaviors of Si:Ce thin films.
N. Fujimura, T. Yokota, Y.Morinaga ,T. Ito
Proc. of the 5th Symposium on Spin Controlled Semiconductor Nanostructurs　125-127 (1999)

● Ferroelectricity of YMnO₃ thin films prepared via solution
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito
Appl. Phys. Lett.　75, 5(1999) 719-721
http://scitation.aip.org/content/aip/journal/apl/75/5/10.1063/1.124493

● Lowering the crystallization temperature of YMnO₃ thin films by the sol-gel method using an yttrium alkoxide
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito
Jpn. J. Appl. Phys.　38, 9B(1999)  5448-5451
http://jjap.jsap.jp/link?JJAP/38/5448/

● 太陽電池用CuInSe₂薄膜の機能傾斜化
芦田　淳、長田　貴弘、熊谷　倫一、伊藤　太一郎
傾斜機能材料, 13(1999) 155-158

● Preparation and dielectric properties of YMnO₃ ferroelectric thin films by sol-gel method.
K. Tadanaga, H. Kitahata, T. Minami, N. Fujimura, T. Ito
Journal of Sol-Gel Science and Technology　13, 1-3(1998) 903-908
http://link.springer.com/article/10.1023%2FA%3A1008675307600

● Microstructure and dielectric properties of YMnO₃ thin films prepared by dip-coating
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito
Journal of American Ceramic Soc, 81, 5(1998)  1357-1360
http://onlinelibrary.wiley.com/doi/10.1111/j.1151-2916.1998.tb02491.x/abstract;jsessionid=C4891CDB4E0755C865700DA3EA7E39B8.f04t04

● Electric and magnetic properties of Ce doped Si thin films
T. Yokota, Y. Morinaga, N. Fujimura, T. Ito
Proc. of Symposium on Spin Controlled Semiconductor Nanostructurs(1998) 115-117

● Anomalous transport and magnetic properties of Si:Ce system.
N. Fujimura, Y. Morinaga, T. Yokota, T. Ito
Proc. of Symposium on Spin Controlled Semiconductor Nanostructurs(1998)81-82

● Variety of spin structure in Ce doped Si: fundamental study on spin structure control.
N. Fujimura, Y. Morinaga, T. Yokota, T. Ito
Proc. of Symposium on Spin Controlled Semiconductor Nanostructurs(1998) 105-108

● Ce concentration dependence on the ferromagnetism in Dilutely Ce-doped Si
Y. Morinaga, N. Fujimura, T. Yokota, T. Ito
Proc. of Symposium on Spin Controlled Semiconductor Nanostructurs(1998)112-113

● Electrical characterization of ferroelectric YMnO₃ films for MF(I)S-FET application.
N. Fujimura, T. Yoshimura, T. Ito
Proc. of the 11th IEEE International Symposium on the Application of Ferroelectrics(1998)495-498
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=786641&abstractAccess=no&userType=inst

● Polarization behavior and its C-V Properties of YMnO₃/Y₂O₃/Si.
N. Fujimura
Annual Report of Japan Technology Transfer Association（1998） 233-238

● Anomalous magnetic-transport phenomena in Si:Ce thin films.
N. Fujimura, T. Yokota, Y. Morinaga, T. Ito
Proc. of Symposium on Spin Controlled Semiconductor Nanostructurs(1998)13-14

● Control of spin structure in Si:Ce DMS system.
N. Fujimura, T. Yokota, Y. Morinaga, T. Ito
Proc. of Symposium on Spin Controlled Semiconductor Nanostructurs(1998)  203-207

● Growth and properties of YMnO₃ thin films for non-volatile memories.
T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tsukui, K. Kawabata, T. Ito
Journal of the Korean Physical Society, 32(1998) S1632-S1635

● Ferroelectric properties of C-oriented YMnO₃ thin films deposited on Si substrate.
T. Yoshimura, N. Fujimura, T. Ito
Appl. Phys. Lett.　73, 3(1998) 414-416
http://scitation.aip.org/content/aip/journal/apl/73/3/10.1063/1.122269

● Preferred orientation phase formation and the electrical properties of pulsed laser deposited SrBi₂Ta₂O₉ thin films.
N. Fujimura, Darin T. Thomas, Stephen K. Streiffer, Angus I. Kingon
Jpn. J. Appl. Phys.　37, 9B(1998) 5185-5188
http://jjap.jsap.jp/link?JJAP/37/5185/

● Effect of stoichiometry and A-site substitution on the electrical properties of ferroelectric YMnO₃
T. Shimura, N. Fujimura, S. Yamamori, T. Yoshimura,　T. Ito
Jpn. J. Appl. Phys. 37, 9B(1998)5280-5284
http://jjap.jsap.jp/link?JJAP/37/5280/

●Composition and Electrode Effects on the Electrical Properties of SrBi₂Ta₂O₉
Darin T.Thomas,Norifumi Fujimura,S.K.Streiffer,Angus I.Kingon
MRS Symp.Proc.493.(1998)153-158
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8060290&fulltextType=RA&fileId=S1946427400250422

● The stability of ordered structures in SiGe films examined by strain energy calculations.
T. Araki, N. Fujimura, T. Ito
J. Crystal Growth, 174, 1-4(1997)675-679
http://www.sciencedirect.com/science/article/pii/S0022024897000171

● The initial stage of BaTiO₃ epitaxial films on etched and annealed SrTiO₃ substrate.
T. Yoshimura, N. Fujimura, T. Ito
J. Crystal Growth, 174, 1-4(1997) 790-795
http://www.sciencedirect.com/science/article/pii/S0022024897000614

● Formation of YMnO₃ films drectly on Si substrate.
N. Aoki, N. Fujimura, T. Yoshimura, T. Ito
J. Crystal Growth, 174, 1-4(1997) 796-800
http://www.sciencedirect.com/science/article/pii/S002202489700016X

● Effect of Ce doping on the growth of ZnO thin films.
Y. Morinaga, K. Sakuragi, N. Fujimura, T. Ito
J. Crystal Growth, 174, 1-4(1997)691-695
http://www.sciencedirect.com/science/article/pii/S0022024897000456

● Mechanism for ordering in SiGe films with reconstructed surface.
T. Araki, N. Fujimura, T. Ito
Appl. Phys. Lett. 71, 9(1997)1174-1176
http://scitation.aip.org/content/aip/journal/apl/71/9/10.1063/1.119617

● Fabrication of YMnO₃ thin films on Si substrates by a pulsed laser deposition method.
T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tsukui, K. Kawabata, T. Ito
Jpn. J. Appl. Phys. 36, 9B(1997) 5921-5924
http://jjap.jsap.jp/link?JJAP/36/5921/

● YMnO₃ thin films prepared from solutions for non-volatile memory devices.
N. Fujimura, H.Tanaka, H.Kitahata, K.Tadanaga, T. Ito, T. Minami
Jpn. J. Appl. Phys., 36, 12A(1997)L1601-L1603
http://jjap.jsap.jp/cgi-bin/getarticle?magazine=JJAP&volume=36&page=L1601

● Growth and electrical property of YMnO₃ thin films on Si substrate.
T. Yoshimura, N. Fujimura, M. Takaoka, T. Ito
Symposium proc. of Materials Research Society, 493(1997) 471-476

● Composition and electrode effects on the electrical properties of Sr-Bi-Ta-O
D.Thomas, N. Fujimura, S.K. Streiffer, A.I. Kingon
Symposium proc. of Materials Research Society, 493(1997)153-158

● Fabrication of YMnO₃ thin films.: new candidate for non-volatile memory device.
N. Fujimura, T. Ishida, T. Yoshimura, T. Ito
Symposium proc. of Materials Research Society, 433 (1996)  119-124
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8056123

● エレクトロ・セラミックス薄膜の配向制御による高機能化
藤村紀文, 伊藤太一郎
材料集合組織とその工業的応用に関する技術の現状と将来展望, 4(1996) 41-44

● Epitaxially grown YMnO₃ film: new candidate for non-volatile memory devices.
N. Fujimura, T. Ishida, T. Yoshimura, T. Ito
Applied Physics Letter, 69, 7(1996)1011-1013
http://scitation.aip.org/content/aip/journal/apl/69/7/10.1063/1.117969

● Sr/Bi ratio effects for Sr_xBi_yTa₂O₉ grown by pulsed laser ablation.
D. Thomas, N. Fujimura, O. Autiello, S.K. Streiffer, A.I. Kingon
Proceedings of the 10th IEEE International Symposium on the Application of Ferroelectrics(1996)495-498
http://ieeexplore.ieee.org/Xplore/defdeny.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D602797&denyReason=-134&arnumber=602797&productsMatched=null&userType=inst

● Structural characterization of ordered SiGe films grown on Ge (100) and Si (100) substrate.
T. Araki, N. Fujimura, T. Ito, A. Wakahara, A. Sasaki
J. Appl. Phys. 80, 7(1996) 3804-3807
http://scitation.aip.org/content/aip/journal/jap/80/7/10.1063/1.363333

● サファイア基板上での強誘電体エピタキシャル薄膜—表面弾性波素子への応用—
藤村紀文, 伊藤太一郎
表面科学, 17, 11(1996)671-675
https://www.jstage.jst.go.jp/article/jsssj1980/17/11/17_11_671/_pdf

●Growth mechanism of YMnO₃ film as a new candidate for nonvolatile memory devices
Norifumi Fujimura, Shuichiro Azuma, Nobuaki Aoki, Takeshi Yoshimura, and Taichiro Ito
Journal of Applied Physics 80 (1996)7084
http://scitation.aip.org/content/aip/journal/jap/80/12/10.1063/1.363719

● 酸化物薄膜の配向制御
藤村紀文, 伊藤太一郎
科学と工業　69巻1号（1995）9－16

● Orientation control of (Ca, Sr)CuO₂ thin films.
S. Nagai, H. Tanaka, N. Fujimura, T. Ito
J. Appl. Phys.　77, 8(1995) 3805-3811
http://scitation.aip.org/content/aip/journal/jap/77/8/10.1063/1.358556

● 酸化物ヘテロ界面の化学結合様式と構造設計
藤村紀文, 伊藤太一郎
応用物理　64巻4号（1995） 359-363
https://www.jstage.jst.go.jp/article/oubutsu1932/64/4/64_4_359/_pdf

● Sputtering deposition of LiNbO₃ thin films and evaluation of the interface.
N. Fujimura, T. Ito
Text Book for the Research Forum Sponsored by Vacuum Society of Japan Kansai branch　7, 1(1995)11-17

● Epitaxial growth of BaTiO₃ thin films and their internal stress.
S.T.Lee, N. Fujimura, T. Ito Jpn.
Jpn.J. Appl. Phys.　34, 9B(1995) 5168-5171
http://jjap.jsap.jp/link?JJAP/34/5168/

● Epitaxial orientation control of LiTaO₃ film and interfacial coulomb’s potential .
N. Fujimura, H. Tsuboi, T. Ito
Jpn. J. Appl. Phys.　34, 9B(1995)  5163-5167
http://jjap.jsap.jp/cgi-bin/getarticle?magazine=JJAP&volume=34&page=5163

● ReMnO₃ (Re: rare earth) thin films as a candidate for non-volatile memory devices.
N. Fujimura, T. Ishida, T. Ito
Proc. of 7th Japan-US semonar on dielectric and piezoelectric ceramics(1995)109-112

●LiNbO₃薄膜のスパッタ成長と界面評価
藤村　紀文、伊藤　太一郎
日本真空協会関西支部　平成7年度第1回研究例会資料（1995）11-17