●Crystal structure and local piezoelectric properties of strain-controlled (001) BiFeO₃ epitaxial thin films
K.Ujimoto, T. Yoshimura, K. Wakazono, A. Ashida, N. Fujimura
Thin Solid Films, 550, 738-741 (2014).
http://www.sciencedirect.com/science/article/pii/S0040609013018117

●Correlation between the intra-atomic Mn³⁺ photoluminescence and antiferromagnetic transition in an YMnO₃ epitaxial film
M.Nakayama, Y. Furukawa, K. Maeda, T. Yoshimura, H. Uga, N. Fujimura
Applied Physics Express, 7, 023002 (2014).
Spotlight paper.
https://www.researchgate.net/publication/274002743

●Aluminum-doped zinc oxide electrode for robust (Pb,La)(Zr,Ti)O₃ capacitors: effect of oxide insulator encapsulation and oxide buffer layer
Yoko Takada, Toru Tsuji, Naoki Okamoto, Takeyasu Saito, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura, Koji Higuchi, Akira Kitajima, Akihiro Oshima
Journal of Materials Science: Materials in Electronics , 25, 2155-2161 (2014).
https://www.researchgate.net/publication/261409625

●Development of piezoelectric MEMS vibration energy harvester using (100) oriented BiFeO₃ ferroelectric film
S Murakami, T Yoshimura, K Satoh, K Wakazono, K Kariya and N Fujimura
Journal of Physics:Conference Series 476(2013)012007
http://dx.doi.org/10.1088/1742-6596/476/1/012007

●Enhancement of Direct Piezoelectric Properties of Domain-Engineered(100)BiFeO₃ Films
Takeshi Yshimura,Katsuya Ujimoto,Yusaku Kawahara,keisuke Wakazono,Kento Kariya,Norifumi Fujimura,Syuichi Murakami
Japanese Journal of Applied Physics, 52 (Sep2013)09KA03
http://dx.doi.org/10.7567/JJAP.52.09KA03

●解説：表面再構成構造を利用したSiへの希土類元素の高濃度ドーピング
宮田　祐輔，　奥山　祥孝，　藤村　紀文
スマートプロセス学会誌.2（2013）219-223
http://dx.doi.org/10.7791/jspmee.2.219

●Comparative study of electrical properties of PbLaZrTiOx capacitors with Al-doped ZnO and ITO top electrodes
Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima
2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013
6748710(July 2013) 360-362
http://dx.doi.org/10.1109/ISAF.2013.6748710

●Electrical properties of PbLaZrTiOx capacitors with conductive oxide buffer layer on Pt electrodes
T. Saito, Y. Takada, T. Tsuji, N. Okamoto, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima
2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013
6748734(July 2013)205-207
http://dx.doi.org/10.1109/ISAF.2013.6748734

●Fabrication and Electric Properties of Ferroelectric-Gate Thin Film Transistors with Nano-Channel
Yuhei Nomura ,Takeshi Yoshimura,Norifumi Fujimura
J.Vac.Soc.Jpn.56(Jun2013) 172-175
http://dx.doi.org/10.3131/jvsj2.56.172

●Piezoelectric Vibrational Energy Harvester Using Lead-Free Ferroelectric BiFeO₃ Films
Takeshi Yoshimura,Shuichi Murakami,Keisuke Wakazono,Kento Kariya,Norifumi Fujimura
Appl. Phys. Express,6(May2013) 051501
http://dx.doi.org/10.7567/APEX.6.051501

●Effect of Target Surface Microstructure on Morphological and Electrical Properties of Pulsed-Laser-Deposited BiFeO₃ Epitaxial Thin Films
Katsuya Ujimoto,Takeshi Yoshimura,Atsushi Ashida,Norifumi Fujimura
Japanese Journal of Applied Physics, 52(Apr 2013) 045803
http://dx.doi.org/10.7567/JJAP.52.045803

●Effects of La substitution for BiFeO₃ epitaxial thin films
K.Wakazono,Y. Kawahara,K. Ujimoto,T. Yoshimura, N. Fujimura
Journal of the Korean Physical Society ,62(Apr 2013)1069-1072
http://dx.doi.org/10.3938/jkps.62.1069

●Effect of the annealing temperature of P(VDF/TrFE) thin films on their ferroelectric properties
Yoshiki Yachi,Takeshi Yoshimura,Norifumi Fujimura
Journal of the Korean Physical Society,62 (Apr 2013) 1065-1068
http://dx.doi.org/10.3938/jkps.62.1065

●Field Effect of Magnetic Semiconductor Si:Ce Thin Films Using Organic Ferroelectrics
Yusuke Miyata,Hiroshi Takata,Yoshitaka Okuyama,Takeshi Yoshimura,Norifumi Fujimura
J.Vac.Soc.Jpn.56(Apr 2013)136-138
http://dx.doi.org/10.3131/jvsj2.56.136

●Orientation Control of ZnO Films Deposited Using Nonequilibrium Atmospheric Pressure N₂/O₂ Plasma
Yukinori Nose,Tatsuru Nakamura,Takeshi Yoshimura,Atsushi Ashida,Tsuyoshi Uehara,Norifumi Fujimura
Japanese Journal of Applied Physics, 52(Jan 2013) 01AC03
http://dx.doi.org/10.7567/JJAP.52.01AC03

●Local pH control by electrolysis for ZnO epitaxial deposition on a Pt cathode
S.Yagi, Y. Kondo, Y. Satake, A. Ashida, N. Fujimura
Electrochimica Acta, 62, 348–353 (2012).
https://www.researchgate.net/publication/256696723

●Direct piezoelectric properties of (100) and (111) BiFeO₃ epitaxial thin films
K.Ujimoto, T. Yoshimura, A. Ashida, N. Fujimura
Appl. Phys. Lett., 100, 102901 1-3 (2012).
http://aip.scitation.org/doi/10.1063/1.3692579

●Electrical properties of sol-gel derived PbLaZrTiO_x capacitors with nonnoble metal oxide top electrodes
Yoko Takada,Toru Tsuji,Naoki Okamoto,Takeyasu Saito,K. Kondo,Takeshi Yoshimura,Norifumi Fujimura,Koji Higuchi,Akira Kitajima,andAkihiro Oshima
ECS Transactions,50(2012)43-48
http://dx.doi.org/doi:10.1149/05034.0043ecst

●Direct piezoelectric properties of (100) and (111) BiFeO₃ epitaxial thin films
K. Ujimoto, T. Yoshimura, A. Ashida and N. Fujimura
Applied Physics Letters, 100(2012) 102901
http://dx.doi.org/10.1063/1.3692579

●Electronic transport in organic ferroelectric gate field-effect transistors with ZnO channel
H. Yamada, T. Yoshimura, N. Fujimura
Mater. Res.Soc. Symp. Proc., 1430 (2012)  mrss12-1430-e04-08
http://dx.doi.org/10.1557/opl.2012.900

●大気圧非平衡酸窒素プラズマを用いたZnO薄膜の低温形成とその成長形態
野瀬幸則・吉村　武・芦田　淳・上原　剛・藤村紀文
材料, 61(2012) 756-759
http://dx.doi.org/10.2472/jsms.61.756

●誘電泳動により作製したTiO₂ナノチューブ電界効果トランジスタの電気伝導
石井将之・寺内雅裕・吉村　武・中山忠親・藤村紀文
材料, 61(2012) 766-770
http://dx.doi.org/10.2472/jsms.61.766

●Growth temperature and thickness dependences of crystal and micro domain structures of BiFeO ₃ epitaxial films
Katsuya Ujimoto, Takeshi Yoshimura, Norifumi　Fujimura
Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012(2012)6297846
http://dx.doi.org/10.1109/ISAF.2012.6297846

●Control of Crystal Structure of BiFeO₃ Epitaxial Thin Films by the　Growth Condition and the Piezoelectric Properties
Yusaku Kawahara, Katsuya Ujimoto, Takeshi Yoshimura, Norifumi　Fujimura
Japanese Journal of Applied Physics,51(2012)09LB04
http://dx.doi.org/10.1143/JJAP.51.09LB04

●Effect of Ferroelectric Polarization on Carrier Transport in Controlled Polarization-Type Ferroelectric Gate Field-Effect Transistors with Poly(vinylidene fluoride–tetrafluoroethylene)/ZnO Heterostructure
Hiroaki　Yamada, Takeshi Yoshimura , Norifumi Fujimura
Japanese Journal of Applied Physics,51(2012) 11PB01
http://dx.doi.org/10.1143/JJAP.51.11PB01

●Investigation of Gas Sensing Characteristics of TiO₂ Nanotube Field-Effect Transistor
Masayuki Ishii, Masahiro Terauchi, Takeshi Yoshimura, Tadachika Nakayama, Norifumi Fujimura
Japanese Journal of Applied Physics,51(2012)11PE10
http://dx.doi.org/10.1143/JJAP.51.11PE10

●Local pH control by electrolysis for ZnO epitaxial deposition on a Pt cathode
Shunsuke Yagi,Yusuke Kondo,Yuichi Satake,Atsushi Ashida,Norifumi Fujimura
Electrochimica Acta 62(Feb2012)348–353
http://dx.doi.org/10.1016/j.electacta.2011.12.059

●ZnO crystal growth on microelectrode by electrochemical deposition method
Y.Kondo, A. Ashida, N. Nouzu, N. Fujimura
IOP Conf. Series: Materials Science and Engineering, 18, 092043 1-4 (2011).
https://www.researchgate.net/publication/253179147

●酸化亜鉛単結晶基板の極性面の違いによる表面処理方法とエピタキシャル成長過程の相違
中村立，藤村紀文
材料, 60, 983-987 (2011).
http://doi.org/10.2472/jsms.60.983

●Fine-structured TiO2 ceramic patterns on the ceramic surface fabricated by replication
H D Kim, T Nakayama, B J Hong, K Imaki, T Yoshimura, T Suzuki, H Suematsu, S W Lee, Z Fu and K Niihara
MaterialsScienceandEngineering 20 (2011) 012003
http://iopscience.iop.org/1757-899X/20/1/012003/pdf/1757-899X_20_1_012003.pdf

●Characterization of Direct Piezoelectric Effect in 31 and 33 modes for Application to Vibration Energy Harvester
H. Miyabuchi, T. Yoshimura, S. Murakami and N. Fujimura
Japanese Journal of Applied Physics, 50(2011)09ND17
http://jjap.jsap.jp/link?JJAP/50/09ND17/

●Effect of Ferroelectric Polarization Domain on Electronic Transport Properties of Ferroelectric/ZnO Heterostructure
H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura
Japanese Journal of Applied Physics, 50 (2011) 09NA06
http://jjap.jsap.jp/link?JJAP/50/09NA06/

●Ce-Induced Reconstruction of Si(001) Surface Structures
Daisuke Shindo, Shusaku Sakurai, and Norifumi Fujimura
Japanese Journal of Applied Physics 50 (2011) 065701
http://jjap.jsap.jp/link?JJAP/50/065701/

●Direct Piezoelectricity of PZT Films and Application to Vibration Energy Harvesting
H. Miyabuchi, T. Yoshimura, S. Murakami and N. Fujimura
Journal of the Korean Physical Society, 59(2011) 2524-2527
https://www.researchgate.net/publication/272727613

●Effect of Lattice Misfit Strain on Crystal System and Ferroelectric Property of BiFeO₃ Epitaxial Thin Films
K. Ujimoto, T. Yoshimura, A. Ashida and N. Fujimura
Materials Science and Engineering, 18 (2011)092064
doi:10.1088/1757-899X/18/9/092064

●Characterization of Direct Piezoelectric Properties for Vibration Energy Harvesting
T. Yoshimura, H. Miyabuchi, S. Murakami, A. Ashida and N. Fujimura
Materials Science and Engineering, 18 (2011) 092026
doi:10.1088/1757-899X/18/9/092026

●Characterization of Field Effect Transistor with TiO₂ Nanotube Channel Fabricated by Dielecrophoresis
M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama N. Fujimura
Materials Science and Engineering, 18 (2011) 082019
doi:10.1088/1757-899X/18/8/082019

●Impedance analysis of controlled-polarization-type ferroelectric-gate TFT using RC lumped constant circuit
T. Fukushima, K. Maeda, T. Yoshimura, A. Ashida, and N. Fujimura
Japanese Journal of Applied Physics, 50 (2011)04DD16
http://jjap.jsap.jp/link?JJAP/50/04DD16/

●Initial Growth Process in Electrochemical Deposition of ZnO
Atsushi Ashida, Naoya Nouzu, and Norifumi Fujimura
Japanese Journal of Applied Physics 50 (2011) 05FB12
http://jjap.jsap.jp/link?JJAP/50/05FB12/

●Electronic Transport Property of a YbMnO₃/ZnO Heterostructure
H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura
Journal of the Korean Physical Society 58(2011)  792-796
http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=947E2F03-4C2C-4335-B926-6F4410D4E884

●Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films
T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Journal of Crystal Growth, 318(2011) 516-518
http://dx.doi.org/10.1016/j.jcrysgro.2010.10.044

●Fabrication of robust PbLa(Zr,Ti)O₃ capacitor structures using insulating oxide encapsulation layers for FeRAM integration.
T. Saito, T.Tsuji, K. Izumi, Y. Hirota, N. Okamoto, K.Kondo, T. Yoshimura, N. Fujimura, A. Kitajima A. Oshima
Electronics Letters, 47 (2011) 486
http://dx.doi.org/10.1049/el.2011.0461

●Structural analysis and electrical properties of pure Ge3N4 dielectric layers　formed by an atmospheric-pressure nitrogen plasma
Ryoma Hayakawa, Masashi Yoshida, Kouta Ide, Yoshiyuki Yamashita,Hideki Yoshikawa, Keisuke Kobayashi, Shunsuke Kunugi, Tsuyoshi Uehara,and Norifumi Fujimura
J.Appl.Phys. 110(2011)064103
http://aip.scitation.org/doi/full/10.1063/1.3638133

●Fabrication of the finestructured alumina porous materials with nanoimprint method
Kim, H.D, T.Nakayama, J.Yoshimura, K.Imaki, T.Yoshimura,H. Suematsu, T.Suzuki, K.Niihara
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan,117(April 2009)534-536
https://www.jstage.jst.go.jp/article/jcersj2/117/1364/117_1364_534/_pdf

●Fine-structured patterns of porous alumina material fabricated by a replication method
Hong Dae Kim, Tadachika Nakayama, Byung Jin Hong, Kazuyoshi Imaki, Takeshi Yoshimura, Tsuneo Suzuki, Hisayuki Suematsu, Koichi Niihara
Journal of the European Ceramic Society,30( Oct 2010) 2735–2739
http://ac.els-cdn.com/S0955221910002293/1-s2.0-S0955221910002293-main.pdf?_tid=8d15ccc8-ce96-11e3-add0-00000aacb361&acdnat=1398663360_d53cb23b161bebba12b9d05326948be1

●Fine-structured ZnO patterns with sub-micrometer on the ceramic surface fabricated by a replication method
Hong Dae KIM, Tadachika NAKAYAMA, Byung Jin HONG, Kazuyoshi IMAKI, Takeshi YOSHIMURA, Tsuneo SUZUKI, Hisayuki SUEMATSU,  Koichi NIIHARA
Journal of the Ceramic Society of Japan,118(Dec 2010)1384,P 1140-1143
https://www.jstage.jst.go.jp/article/jcersj2/118/1384/118_1384_1140/_pdf

●Effects of Mg doping on structural, optical, and electrical properties of CuScO2(0001) epitaxial films
Yoshiharu Kakehi , Kazuo Satoh , Takeshi Yoshimura , Atsushi Ashida , Norifumi Fujimura
Vacuum 84.5.10 (2010) 618–621
http://www.sciencedirect.com/science/article/pii/S0042207X09003509

● Control of cathodic potential for deposition of ZnO by constant-current electrochemical method
N. Nouzu, A. Ashida, T. Yoshimura, N. Fujimura
Thin Solid Films 518 (2010) 2957-2960
http://dx.doi.org/10.1016/j.tsf.2009.09.194

● Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition
T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Thin Solid Films 518 (2010) 2971-2974
http://dx.doi.org/10.1016/j.tsf.2009.09.184

● Control of carrier concentration of p-type transparent conducting CuScO₂(0001) epitaxial films
Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura
Thin Solid Films 518 (2010) 3097-3100
http://dx.doi.org/10.1016/j.tsf.2009.07.204

● Direct Piezoelectric Properties of Mn-Doped ZnO Epitaxial Films
T. Yoshimura, H. Sakiyama, T. Oshio, A. Ashida, N. Fujimura
Jpn. J. Appl. Phys, 49 (2010) 021501
http://jjap.jsap.jp/link?JJAP/49/021501/

● The effects of aluminum doping for the magnetotransport property of Si:Ce thin films
D. Shindo, K. Fujii, T. Terao, S. Sakurai, S. Mori, K. Kurushima, N. Fujimura
Journal of Applied Physics, 107 (2010)  09C308
http://dx.doi.org/10.1063/1.3352981

● Dielectric behavior of YMnO₃ epitaxial thin film at around magnetic phase transition temperature
K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura
Advances in Science and Technology, 67(2010)176-181
http://www.scientific.net/AST.67.176

● Fabrication and magneto-transport properties of Zn_0.88-xMg_xMn_0.12O/ZnO heterostructures grown on ZnO single-crystal substrates
K. Masuko, T. Nakamura, A. Ashida, T. Yoshimura, N. Fujimura
Advances in Science and Technology, 75 (2010) 1-8
http://www.scientific.net/AST.75.1

● Ferroelectric properties of magnetoferroelectric YMnO₃ epitaxial films at around the neel temperature
T. Yoshimura, K. Maeda, A. Ashida, N. Fujimura
Key Engineering Materials, 445(2010)144-147
http://www.scientific.net/KEM.445.144

● Local piezoelectric and conduction properties of BiFeO₃ epitaxial thin films
K. Ujimoto, T. Yoshimura, N. Fujimura
Japanese Journal of Applied Physics, 49 (2010) 09MB02
http://jjap.jsap.jp/link?JJAP/49/09MB02/

● 定電流電気化学堆積法による酸化亜鉛薄膜の作製
芦田淳，藤村紀文
材料, 59(2010)681-685
https://www.jstage.jst.go.jp/article/jsms/59/9/59_9_681/_pdf

● Analysis of carrier modulation in channel of　ferroelectric-gate transistors having polar semiconductor
T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura
Thin Solid Films, 518(2010)3026-3029
http://dx.doi.org/10.1016/j.tsf.2009.09.185

● Direct piezoelectric properties of Mn-doped ZnO epitaxial films
T. Yoshimura, H. Sakiyama, T. Oshio, A. Ashida, N. Fujimura
Japanese Journal of Applied Physics, 49 (2010)021501
http://jjap.jsap.jp/link?JJAP/49/021501/

学術著書

●酸化亜鉛の最先端技術と将来
藤村紀文（分担）
監修　山本哲也，シーエムシー出版，第３章（2010）
http://www.cmcbooks.co.jp/products/detail.php?product_id=3686

● Electron transport properties of Zn_0.88Mn_0.12O/ZnO modulation-doped heterostructures
K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Journal of Vacuum Science & Technology B, 27(2009)1760-1764
http://dx.doi.org/+10.1116/1.3093916

● Contribution of s-d exchange interaction to magnetoresistance of ZnO-based heterostructures with a magnetic barrier
K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Physical Review B, 80(2009) 125313
http://prb.aps.org/abstract/PRB/v80/i12/e125313

● Polarization switching behavior of YMnO₃ thin film at around magnetic phase transition temperature
K. Maeda, T. Yoshimura, N. Fujimura
Japanese Journal of Applied Physics, 48(2009) 09KB05
http://jjap.jsap.jp/link?JJAP/48/09KB05/

● Effects of Mg doping on structural, optical, and electrical properties of CuScO₂(0001) epitaxial films
Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura
Vacuum Surface Engineering, Surface Instrumentation & Vacuum Technology, 84(2009) 618-621
http://dx.doi.org/10.1016/j.vacuum.2009.06.023

● Magnetic properties of uniformly Ce-doped Si thin films with n-type conduction
T. Terao, K. Fujii, D. Shindo, T. Yoshimura, N.Fujimura
Japanese Journal of Applied Physics, 48 (2009) 033003
http://jjap.jsap.jp/link?JJAP/48/033003/

● Amorphous carbon film deposition for hydrogen barrier in FeRAM integration by radio frequency plasma chemical vapor deposition
T. Saito, K. Izumi, Y. Hirota, N. Okamoro, K. Kondo, T. Yoshimura, N. Fujimura
Electrochemical Society Transactions, 25(2009) 693-698
http://ecst.ecsdl.org/content/25/8/693

● Optical and electrical properties of CuScO₂ epitaxial films prepared by combining two-step deposition and post-annealing techniques
Y. Kakehi, K. Satoh, T. Yotsuya, K. Masuko, T. Yoshimura, A. Ashida, N. Fujimura
Journal of Crystal Growth, 311(2009)  1117-1122
http://dx.doi.org/10.1016/j.jcrysgro.2008.11.060

● Spin-phonon coupling in multiferroic YbMnO₃ studied by Raman scattering
H. Fukumura, N. Hasuike, H. Harima , K. Kisoda , K. Fukae , T. Yoshimura , N. Fujimura
JOURNAL OF PHYSICS-CONDENSED MATTER, 21 (2009) 064218
http://iopscience.iop.org/0953-8984/21/6/064218/

●Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method
Takeyasu Saito, Kaname Izumi, Yuichiro Hirota, Naoki Okamoto, Kazuo Kondo,Takeshi Yoshimura and Norifumi Fujimura
216th ECS Transactions, 25 (2009)693-698
http://ecst.ecsdl.org/content/25/8/693.abstract

解説, 総説

●ZnMnO/ZnOヘテロ構造の作製とその磁気輸送特性
(Fabrication and magneto-transport properties of ZnMnO/ZnO heterostructures)
益子 慶一郎, 芦田 淳, 吉村 武, 藤村 紀文
多元系機能材料研究会 平成２１年度活動報告書.

● Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor
T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, and N. Fujimura
Japanese Journal of Applied Physics, 47 (2008) 8874-8879
http://jjap.jsap.jp/link?JJAP/47/8874/

● Effects of Oxygen Annealing on Dielectric Properties of LuFeCuO₄
Y. Matsuo, M. Suzuki, Y. Noguchi, T. Yoshimura, N. Fujimura, K. Yoshi, N. Ikeda, S. Mori
Japanese Journal of Applied Physics, 47(2008) 8464-8467
http://jjap.jsap.jp/link?JJAP/47/8464/

● Electrical and optical properties of excess oxygen intercalated CuScO₂(0001) epitaxial films prepared by oxygen radical annealing
Y. Kakehi, K. Satoh, T. Yotsuya, A. Ashida, T. Yoshimura and N. Fujimura
Thin Solid Films, 516(2008) 5785-5789
http://www.sciencedirect.com/science/article/pii/S0040609007017129

● Dielectric properties of ferroelectric/DMS heterointerface using YMnO₃ and Ce doped Si
D. Shindo, T. Yoshimura and N. Fujimura
Applied Surface Science, 254(2008) 6218-6221
http://www.sciencedirect.com/science/article/pii/S0169433208004455

● Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films
S. Sakamoto, T. Oshio, A. Ashida, T. Yoshimura and N. Fujimura
Applied Surface Science, 254(2008) 6248-6251
http://www.sciencedirect.com/science/article/pii/S0169433208004108

● Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Applied Physics, 103 (2008) 093717
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4947858&abstractAccess=no&userType=inst

● Magnetic and Dielectric Properties of Yb(Mn_1-xAl_x)O₃ Thin Films
K. Fukae, T. Takahashi, T. Yoshimura and N. Fujimura
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 55(2008)  1056-1060
http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4524984

● Spin-dependent transport in a ZnMnO/ZnO heterostructure
K. Masuko, A. Ashida, T. Yoshimura and
N. Fujimura
Journal of Applied Physics, 103 (2008)07D124
http://scitation.aip.org/content/aip/journal/jap/103/7/10.1063/1.2837882

● Effects of Spontaneous and Piezoelectric Polarizations on Carrier Confinement at the Zn_0.88Mn_0.12O/ZnO Interface
K. Masuko, H. Sakiyama, A. Ashida, T. Yoshimura and N. Fujimura
Physica Status Solidi (c) 5(2008)  3107-3109
http://onlinelibrary.wiley.com/doi/10.1002/pssc.200779222/abstract

● Electro-Optic Property of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Physica Status Solidi (c) 5 (2008) 3110-3112
http://onlinelibrary.wiley.com/doi/10.1002/pssc.200779246/abstract

● Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO (0001) single-crystal substrates
K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Applied Physics, 103(2008) 043714
http://aip.scitation.org/doi/10.1063/1.2841056

● ZnO Thin Films Epitaxially Grown by Electrochemical Deposition Method with Constant Current
A. Ashida, A. Fujita, Y. Shim, K. Wakita and A. Nakahira
Thin Solid Films, 517(2008) 1461-1464
http://www.sciencedirect.com/science/article/pii/S0040609008010687

● ZnO Thin Films Prepared by the Electrochemical Method with Various Electrolytic Current
A. Fujita, A. Ashida and A. Nakahira
Transactions of the Materials Research Society of Japan, 33(2008) 1301-1304

● Raman Spectroscopy of ZnO Crystals under Microwave Irradiation
Atsushi Ashida, Tetsuro Tsujino, Yonggu Shim and Kazuki Wakita
Proceedings of Global Congress on Microwave Energy Application, 747-750 (2008)

● Low temperature growth of Si:Ce thin films with high crystallinity and uniform distribution of Ce grown by solid-source molecular beam epitaxy
T. Terao, Y. Nishimura, D. Shindo and N. Fujimura
Journal of Crystal Growth, 307(2007) 30-34
http://www.sciencedirect.com/science/article/pii/S0022024807005714

● Raman scattering studies on multiferroic YMnO₃
H. Fukumura, S. Matsui, H. Harima, K. Kisoda, T. Takahashi, T. Yoshimura and N. Fujimura
Journal of Physics -Condensed Matter, 19 ,36(2007) 365239
http://iopscience.iop.org/0953-8984/19/36/365239

● Influence of Antiferromagnetic Ordering on Ferroelectric Polarization Switching of YMnO₃ Epitaxial Thin Films
K. Maeda, T. Yoshimura and N. Fujimura
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 54, 12(2007) 2641-2644
http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4430056

● Effect of Bi substitution on the Magnetic and Dielectric Properties of Epitaxially-grown Fe_0.3Zr_0.7O_3-δ Thin Films on SrTiO₃ substrates
T. Matsui, S. Daido, N. Fujimura, T. Yoshimura, H. Tsuda and K. Morii
Journal of Physics and Chemistry of Solids, 68,8,(2007)  1515-1521
http://www.sciencedirect.com/science/article/pii/S0022369707001515

● Magnetic Frustration Behavior of Ferroelectric Ferromagnet YbMnO₃ Epitaxial Films
N. Fujimura, T. Takahashi, T. Yoshimura and A. Ashida
Journal of Applied Physics, 101 (2007) 09M107
http://scitation.aip.org/content/aip/journal/jap/101/9/10.1063/1.2713214

● Multiferroic Behaviors of YMnO₃ and YbMnO₃ Epitaxial Films (INVITED PAPER)
N. Fujimura, N. Shigemitsu, T. Takahashi, A. Ashida and T. Yoshimura
Philosophical Magazine Letters, 87, 3-4(2007)  193-201
http://www.tandfonline.com/doi/abs/10.1080/09500830701250322

● The Comparison of the Growth Models of Silicon Nitride Ultra-Thin Films Fabricated Using Atmospheric Pressure Plasma and Radio Frequency Plasma
M. Nakae, R. Hayakawa, T.Yoshimura, N. Fujimura and T. Uehara
Journal of Applied Physics, 101(2007)  023513
http://scitation.aip.org/content/aip/journal/jap/101/2/10.1063/1.2424501

● Preparation and the magnetic property of ZnMnO thin films on (000) ZnO Single Crystal Substrate
K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Magnetism and Magnetic Materials, 310(2007) e711-e713
http://www.sciencedirect.com/science/article/pii/S0304885306022530

● Magnetic Properties of Low Temperature Grown Si:Ce Thin Films on (001) Si Substrate
T. Terao, Y. Nishimura, D. Shindo, A. Ashida and N. Fujimura
Journal of Magnetism and Magnetic Materials, 310(2007)e726-e728
http://www.sciencedirect.com/science/article/pii/S0304885306020634

● Magnetic and Dielectric Properties of Yb(Mn_1-xAl_x)O₃ Thin Films
K. Fukae, T. Takahashi, T. Yoshimura and N. Fujimura
Proceedings of the 2007 16th IEEE International Symposium on Applications of Ferroelectrics, 437 (2007)
http://www.sciencedirect.com/science/article/pii/S0304885306020634

● Influence of Antiferromagnetic Ordering on Ferroelectric Polarization Switching of YMnO₃ Epitaxial Thin Films
K. Maeda, T. Yoshimura and N. Fujimura
Proceedings of the 2007 16th IEEE International Symposium on Applications of Ferroelectrics, 441(2007) http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4430056

● Conduction Characteristics of Charge Ordering Type Ferroelectrics,YFe₂O₄
K.Imamura, Y.Horibe, T.Yoshimura, N.Fujimura, S.Mori and N.Ikeda
Mater. Res. Soc. Symp. Proc. 966(2007) T07-27
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8160902

● Spin-coupled phonons in multiferroic YbMnO₃ epitaxial films by Raman scattering
H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Takahashi, T.Yoshimura and N. Fujimura
PHONONS 2007 Journal of Physics: Conference Series 92 (2007) 012126
http://iopscience.iop.org/1742-6596/92/1/012126/

● Magnetic and Ferroelectric Properties of YMnO₃ Epitaxial Thin Films
K. Maeda, T. Yoshimura and N. Fujimura
Materials Research Society Symposium Proceedings , 966E(2007) 0966-T03-01
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8160836&fulltextType=RA&fileId=S1946427400055020

● Magnetic Frustration Behavior of Ferroelectric Ferromagnet YbMnO₃ Epitaxial Films
N. Fujimura, T. Takahashi T. Yoshimura and A. Ashida
Journal of Applied Physics 101 (2007) 09M107
http://scitation.aip.org/content/aip/journal/jap/101/9/10.1063/1.2713214

● Preparation and the magnetic property of ZnMnO thin films on (000-1) ZnO single crystal substrate
K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Magnetism and Magnetic Materials 310(2007)e711-e713
http://www.sciencedirect.com/science/article/pii/S0304885306022530

● Electro-optical effect in ZnO:Mn thin films prepared by Xe sputtering
A. Ashida, T. Nagata and N. Fujimura
Journal of Applied Physics 99 (2006) 013509
http://scitation.aip.org/content/aip/journal/jap/99/1/10.1063/1.2150596

● Reaction of Si with excited nitrogen species in pure nitrogen plasma near atmospheric pressure R.Hayakawa, T.Yoshimura, A.Ashida, T.Uehara and N.Fujimura
Thin Solid Films 506-507(2006) 423-426
http://www.sciencedirect.com/science/article/pii/S0040609005013088

● Photoluminescence properties peculiar to the Mn-related transition in a lightly alloyed ZnMnO thin film grown by pulsed laser deposition
M . Nakayama, H . Tanaka, K . Masuko, T. Fukushima, A . Ashida, N . Fujimura
Applied Physics Letters 88(2006) 241908
http://scitation.aip.org/content/aip/journal/apl/88/24/10.1063/1.2209719

● Growth and Ferromagnetic Properties of Ferroelectric YbMnO₃ Thin Films
T. Takahashi, T. Yoshimura and N. Fujimura
Jpn. J. Appl. Phys. 45(2006) 7329-7331
http://jjap.jsap.jp/link?JJAP/45/7329/

● Single-wall Carbon Nanotube Field Effect Transistors with Non-volatile Memory Operation
T. Sakurai, T. Yoshimura, S. Akita, N. Fujimura, Y.Nakayama
Jpn. J. Appl. Phys. 45(2006) L1036 -L1038
http://jjap.jsap.jp/link?JJAP/45/L1036/

● Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure
R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara, M. Tagawa and Y. Teraoka
Journal of Applied Physics 100 (2006) 073710
http://scitation.aip.org/content/aip/journal/jap/100/7/10.1063/1.2353781

● Effect of Additional Oxygen for the Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure
R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura and T. Uehara
Jpn. J. Appl. Phys., 45(2006)9025-9028
http://jjap.jsap.jp/link?JJAP/45/9025/

● Fabrication of YMnO₃ Epitaxial Thin Films Films and the Magnetic-Ferroelectric Correlation Phenomena
K.Maeda, N.Shigemitsu,T.Yoshimura and N.Fujimura
Transactions of the Materials Research Society of Japan 31(2006) 185-188
http://sciencelinks.jp/j-east/list.php?id=000020061206A0225525&check_display.x=67&check_display.y=13

● Mn Doping Effects on Dielectric Properties of ZnO Epitaxial Films
T.oshio,A.Ashida,T.Yoshimura and N.fujimura
Transactions of the Materials Research Society of Japan 31(2006) 189-192
http://sciencelinks.jp/j-east/article/200612/000020061206A0225526.php

● The Nitridation Process of Silicon with Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 31(2006) 161-164
https://sciencelinks.jp/j-east/article/200612/000020061206A0225519.php

● Electric and Magnetic Properties of Ba(Co,Mn)O_3-δ Epitaxial thin films
T. Inoue, T. Matsui, H.Tsuda, T. Yoshimura, N. Fujimura and K. Morii
Transactions of the Materials Research Society of Japan 31(2006)193-196
http://sciencelinks.jp/j-east/list.php?id=000020061206A0225527&check_display.x=57&check_display.y=10

● Fabrication of YMnO₃ Epitaxial Thin Films and the Magnetic-Ferroelectric Correlation Phenomena
K. Maeda, N. Shigemitsu, T. Yoshimura and N. Fujimura
Proceeding, 2006 International Meeting for Future of Electron Devices, Kansai, (2006)
http://sciencelinks.jp/j-east/article/200612/000020061206A0225525.php

●Magnetic and ferroelectric properties of YMnO₃ epitaxial thin films
Maeda, K., Yshimura, T., Fujimura, N.
Materials Research Society Symposium Proceedings, 966(2006)57-62
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8160836

解説, 総説

●強誘電体ゲートトランジスタ用薄膜
藤村紀文
マテリアルインテグレーション, 9 (2006).

●強誘電体電子デバイスの展望
吉村　武、藤村　紀文
金属学会セミナー・テキスト　非シリコン半導体の現状と展望（2006）

●磁性強誘電体のマルチフェロイック物性
藤村　紀文、吉村　武
応用物理　第75巻　第6号（2006）

●多結晶薄膜の形成
藤村　紀文
応用物理学会結晶工学分科会スクールテキスト第8版（2006）69-78

●Epitaxial growth of CuScO₂ thin films on sapphire a-plane substrates by pulsed laser deposition
Y. Kakehi, K. Satoh, T. Yotsuya, S. Nakao, T. Yoshimura, A. Ashida and N. Fujimura
Journal of Applied Physics 97 (2005) 083535
http://scitation.aip.org/content/aip/journal/jap/97/8/10.1063/1.1868061

●Enhancement of ferromagnetic ordering in dielectric BaFe1−xZrxO3−d „x =0.5–0.8… single-crystal films by pulsed laser-beam deposition
T. Matsui, E. Taketani, N. Fujimura, H. Tsuda, and K. Morii
J. Appl.Phys 97 (2005)10M509
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5042290&abstractAccess=no&userType=inst

● Low-Temperature Growth and Characterization of Epitaxial YMnO₃/Y₂O₃/Si MFIS Capacitors with Thinner Insulator Layer
K. Haratake, N. Shigemitsu, M.Nishijima, T. Yoshimura and N. Fujimura
Jpn J. Appl. Phys. 44(2005)6977-6980
http://jjap.jsap.jp/link?JJAP/44/6977/

● Influence of Space Charge of the Dielectric Properties of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 245-247

● Low Temperature Growth of YMnO₃/Y₂O₃/Si Capacitor
K. Haratake, N. Shigemitsu, T. Yoshimura, A. Ashida and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 237-240

● Epitaxial Growth of ZnO Films on Ferroelectric YMnO₃ Deposited by PLD
R. Arai, N. Shigemitsu, K. Masuko, T. Oshio, T. Yoshimura, A. Ashida, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)241-244

● Comparison of Reactivity of Exited Nitrogen Species Generated in RF Plasma　and　Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 225-227

● Low-Temperature Formation of Silicon Nitride Films using Nitrogen Plasma near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 217-220

● Electrical Characterization of YMnO₃-based Metal-Ferroelectric-Insulator-Semiconductor Capacitor by Novel Method
T.Yoshimura, D Ito, K.Hratake, A. Ashida and N.Fujimura
Transactions of the Materials Research Society of Japan 30(2005)233-236

● Interface Characteristics of (Zn,Mn)O/ZnO grown on ZnO Substrate
A. Ashida, K. Masuko, T. Edahiro, T. Oshio and N. Fujimura
J. Crystal Growth, 275(2005) e2211-e2215
http://www.sciencedirect.com/science/article/pii/S0022024804018202

● Effects of electron irradiation on CuInS₂ crystals
K. Abe, Y. Miyoshi, A. Ashida, K. Wakita , T. Ohshima, N. Morishita, T. Kamiya, S. Watase and M. Izaki
Jpn. J. Appl. Phys., 44, 1B (2005)718
http://jjap.jsap.jp/link?JJAP/44/718/

● Fabrication of Silicon Nitride Film using Pure Nitrogen Plasma Generated near Atmospheric Pressure for III-V Semiconductor Fabrication
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Materials Research Society Symposium Proceedings 831(2005) 671-676
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8000704

● Influence of Space Charge on the Dielectric Properties of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)  245-247

● Epitaxial Growth of ZnO Films on Ferroelectric YMnO₃ Films  Deposited by The PLD Method
R. Arai, N. Shigemitsu, K. Masuko, T. Oshio, T. Yoshimura, A. Ashida, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 241-244

● The Comparison of Reactivity of Active Nitrogen Species Generated in RF Plasma and　Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)  225-227

● Low-Temperature Formation of Silicon Nitride Films using Nitrogen Plasma near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)217-220

●Preparation and properties of ferroelectric-insulator-semiconductor junctions using YMnO₃ thin films
N.Fujimura ,T.Yoshimura
Topics in Applied Physics,98, 5(Feb 2005)199-220
http://link.springer.com/chapter/10.1007/978-3-540-31479-0_11

●ZnMnO/ZnOヘテロ界面における二次元電子ガスの形成
益子　慶一郎、芦田　淳、大塩　武士、枝広　俊昭、藤村　紀文
応用電子物性分科会研究会会誌　第11巻第1号（2005）40-45

●マルチフェロイック材料の設計とデバイス応用
藤村　紀文
2005年7月22日応用物理学会結晶工学分科会123回テキスト（2005）33-40

●YMｎO3薄膜の形成とマルチフェロイック物性
藤村　紀文、吉村　武
セラミックデータブック2005　工業と製品　Vol.33　No.87（2005）128-130

●Ferromagnetic and Dielectric Behavior of Mn-Doped BaCoO3
Tomohiro Inoue, Toshiyuki Matsui, Norifumi Fujimura, Hiroshi Tsuda, and Kenji Morii
IEEE Transactions on  Magnetics, 41 (Oct. 2005)10
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=01519351

●Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution
T. Matsui, E. Taketani, H. Tsuda, N. Fujimura, and K. Morii
Appl.Phys.Lett.86 (2005)082902
http://scitation.aip.org/docserver/fulltext/aip/journal/apl/86/8/1.1868887.pdf?expires=1386737759&id=id&accname=freeContent&checksum=2755F2D34041BE5D79C2094CED7D1D69

学術著書

●YMnO₃薄膜の作成とマルチフェロイック物性
藤村紀文, 吉村武
セラミックデータブック2005　工業と製品, 33, 128-130 (2005)

● P-E measurements for ferroelectric gate capacitors
T. Yoshimura and N.Fujimura
Integrated Ferroelectrics 61(2004) 59-64
http://www.tandfonline.com/doi/abs/10.1080/10584580490458847

● Optical Propagation Properties of ZnO Films Grown on Sapphire Substrate
A. Ashida, H. Ohta, T. Nagata, Y. Nakano, N. Fujimura and T. Ito
J. Appl. Phys., 95(2004) 1673-1676
http://scitation.aip.org/content/aip/journal/jap/95/4/10.1063/1.1639143

● The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering
T. Nagata, A. Ashida, N. Fujimura and T. Ito
J. Appl. Phys, 95(2004) 3923-3927
http://scitation.aip.org/content/aip/journal/jap/95/8/10.1063/1.1682682

● Electro-Optic Effect In ZnO:Mn Thin Films
T. Nagata, A. Ashida, N. Fujimura and T. Ito
Journal of Alloys and Compounds 371(2004)  157-159
http://www.sciencedirect.com/science/article/pii/S0925838803011125

● Synthesis of Bi(Fe_xAl_1-x)O₃ Thin Films by Pulsed Laser Deposition and Its Structural Characterization
M. Okada, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys., 43(2004) 6609-6612
http://jjap.jsap.jp/link?JJAP/43/6609/

● Pulsed-Laser-Deposited YMnO₃ Epitaxial Films with Square Polarization-Electric Field Hysteresis Loop and Low-Temperature Growth
N. Shigemitsu, H. Sakata, D. Ito, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys. 43(2004)  6613-6616
http://jjap.jsap.jp/link?JJAP/43/6613/

● Formation of Silicon Oxynitride Films with Low Leakage Current using N₂/O₂ Plasma　near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, and N. Fujimura
Jpn. J. Appl. Phys. 43(2004) 7853-7856
http://jjap.jsap.jp/link?JJAP/43/7853/

● Analysis of Nitrogen Plasma Generated by A Pulsed Plasma System near Atmospheric　Pressure
R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, and N. Fujimura
J. Appl. Phys. 96(2004) 6094-6096
http://scitation.aip.org/content/aip/journal/jap/96/11/10.1063/1.1810202

● Photoluminescence of CuInSe₂ Nanowires
K. Wakita, Y. Miyoshi, M. Iwai, H. Fujibuchi and A. Ashida
Material Research Society Symposium Proceedings 789(2004)55-58

● Investigation of Retention Properties for YMnO₃ Based Metal/Ferroelectric/Insulator/　Semiconductor Capacitors
T. Yoshimura, D. Ito, H. Sakata, N. Shigemitu, K. Haratake, A. Ashida and N. Fujimura
Material Research Society Symposium Proceedings 784(2004) 479-484
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8001059

● Control of Ferroelectric property of YMnO₃ Epitaxial Films by Magnetic Field
N. Fujimura, N. Shigemitsu, T. Yoshimura and A. Ashida
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 61 (2004)
http://sciencelinks.jp/j-east/article/200423/000020042304A0772817.php

● Formatoin of Two-Dimentional Electron Gas and the Magnetotransport Behavior ofZnMnO/ZnO Heterostructure
A. Ashida, T. Edahiro, K. Masuko, T. Oshio and N. Fujimura
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 85-87 (2004)

● Synthesis and properties of Bi(Fe_xAl_1-x)O₃ Multi-Ferroic Thin Films
N. Fujimura, M. Okada, A. Ashida and Yoshimura
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 233-236 (2004)
http://sciencelinks.jp/j-east/article/200424/000020042404A0772857.php

●Effect of oxygen deficiencies on magnetic properties of epitaxial grown BaFeO₃ thin films on (100) SrTiO₃ substrates
Taketani, E., Matsui, T., Fujimura, N., Morii, K.
IEEE Transactions on Magnetics,40, 4 II(Jul 2004)2736-2738
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1325625

●Magnetic and Electric Properties of BaMO₃(M:Co,Mn,Fe)Oxide
T.Inoue, T.matsui, M.Miyai, N.Fujimura, K.Morii
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 67-70 (2004)
https://sciencelinks.jp/j-east/article/200423/000020042304A0772819.php

●New Field Effect Devices using Magnetic-Ferroelectric YMnO3/Diluted Magnetic Semiconductor Hetero-Junction
Norifumi Fujimura,Toshiyuju Matsui
The Murata Science Foundation Annual Report No.18 A21127 (2004)68-85