●Selective isolation of mono to quad layered 2D materials via sonication-assisted micromechanical exfoliation
T. Nakamoto, K. Matsuyama, M. Sakai, C.-T. Chen, Y.-L. Chueh, S. Mouri, T. Yoshimura, N. Fujimura, D. Kiriya
ACS NANO 18, 2455-2463 (2024)
http://10.26434/chemrxiv-2022-lgp8l

●Low-temperature homoepitaxial growth of β-Ga₂O₃ thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique
Md. Earul Islam, Kento Shimamoto, Takeshi Yoshimura, Norifumi Fujimura
AIP Advances 13, 115224 (2023)
http://10.1063/5.0178100

●The ferroelectric orthorhombic phase formation of Hf_0.5Zr_0.5O₂ thin films on (-201) β–Ga₂O₃ substrate by atomic layer deposition
K. Naito, K. Yamaguchi, T. Yoshimura, and N. Fujimura
Japanese Journal of Applied Physics 62, SM1018 (2023)
http://10.35848/1347-4065/ace917

●Piezoelectric MEMS-based physical reservoir computing system without time-delayed feedback
Takeshi Yoshimura, Taiki Haga, Norifumi Fujimura, Kensuke Kanda, and Isaku Kanno
Japanese Journal of Applied Physics 62, SM1013 (2023)
http://10.35848/1347-4065/ace6ab

●Spontaneous crystal fluctuation in hydrocarbon polymer–coated monolayer MoS₂, MoSe₂, WS₂, and WSe₂ with strong photoluminescence enhancement
T. Nakahara†, T. Kobayashi†, T. Dohi, T. Yoshimura, N. Fujimura, D. Kiriya († Equal contribution)
ChemRxiv (2023)
http://10.26434/chemrxiv-2023-gxzqw