The 7th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors
–Yokohama, December、2001-
■Hall effect analysis of Ce doped Si thin films　　　T. Yokota

46th Annual Conference of Magnetism & Magnetic Materials
-Nov. 2001 Washington, USA-
■ Ce concentration dependence of magnetic and transport properties of Ce doped Si epitaxial thin films prepared by MBE
Takeshi Yokota

The 1st International Conference on FeRAM
-Nov.2001年,　Gotenba, Japan-
■ The Present Status of YMnO₃ Based Ferroelectric Gate FET’s (Invited)　　Norifumi Fujimura
■Dielectric Properties of Epitaxial Y₂O₃/Si Thin Films Deposited by a Pulsed Laser Deposition　　T. Matsui

International Meeting on Ferroelectricity IMF-10
-September 3-7,2001 Madrid,Spain-
■ The Progress of YMnO₃/Y₂O₃/Si System For Ferroelectric Gate Field Effect Transistors　　Norifumi Fujimura
■ Retention Property Analysis of Epitaxially Grown YMnO₃/Y₂O₃/Si Capacitor　　Daisuke Ito

8th International Workshop on Oxide Electronics
-Sept.2001, Osaka, Japan-
■ Crystal Growth and Dielectric Properties of BaZrO₃ Thin Films on Si substrates　　Norifumi Fujimura
■ Magnetic and Magneto-Transport Properties of Diluted Magnetic Semiconductor, ZnO:Ni　　Toshiaki Edahiro

ICCG-13/ICVGE-11(13th International Conference on Crystal Growth/
11th Internatonal Conference on Vapor Growth and Epitaxy)
-Jul.2001, Kyoto,Japan-
■ Crystal growth of BaZrO₃ thin films under very low oxygen pressure　　Yasuhiro Kitano
■ Epitaxial growth of highly Ce doped Si films by Molecular Beam Epitaxy　　Takeshi Yokota
■ Structure-property relationship of Ce/Si interfaces fabricated by Molecular Beam Epitaxy
Takamasa Wada
■ Growth process and interfacial structure of epitaxial Y₂O₃/Si thin films deposited by PLD
Kousuke Kakuno
■ Structure-Retention Property Relationship of YMnO₃/Y₂O₃/Si capacitor　　Daisuke Ito
■ Electro-optic Property of ZnO:X (X=Li,Mg) Thin Films　　Takahiro Nagata
■ Magnetic properties of ferromagnetic ZnO:Ni films　　Wakano

●Solid State Growth and Its Application to Ternary Compounds
A.Ashida，N. Yamamoto，T. Ito
Japanese Research Review for Pioneering: Ternary and Multinary Compounds
in the 21st Century”, (The Institute of Pure and Applied Physics, Tokyo, 57-61（2001).

● Magnetic and magneto-transport properties of ZnO:Ni films
T. Wakano, N. Fujimura, N. Abe, Y. Morinaga, A. Ashida, T. Ito
Physica E, 10, 1-3 (2001) 260-264
http://www.sciencedirect.com/science/article/pii/S1386947701000959

● Magnetic properties of Er and Er,O-doped GaAs grown by organometallic vapor phase epitaxy
Y. Morinaga, T. Edahiro, N. Fujimura, T. Ito, T. Koide, Y. Fujiwara, Y. Takeda
Physica E, 10, 1-3(2001)391-394
http://www.sciencedirect.com/science/article/pii/S1386947701001230

● Annealing behavior of electrical properties in plasma-exposed Ti/p-Si interfaces
T. Yamaguchi, H. Kato, N. Fujimura, T. Ito
Thin Solid Films, 396, 1-2(2001) 119-125
http://www.sciencedirect.com/science/article/pii/S0040609001012457

● Ferroelectricity in Li-doped ZnO:X thin films and their application for the optical switching devices
T. Nagata, T. Shimura, Y. Nakano, A. Ashida, N. Fujimura, T. Ito
Jpn. J. Appl. Phys. 40, 9B(2001) 5615-5618
http://jjap.jsap.jp/link?JJAP/40/5615/

● Si:Ce系希薄磁性半導体薄膜の新規な物性
藤村紀文,　横田壮司,　伊藤 太一郎
固体物理　36巻9号(2001) 61-68

● Crystal growth and dielectric properties of BaZrO₃ thin films on Si substrates
N. Fujimura, Y. Kitano, T. Matsui, K. Morii, T. Ito
Proc. of the 8th International Workshop on Oxide Electronics (2001)

● Magnetic and Magneto-Transport Properties of Diluted Magnetic Semiconductor, ZnO:Ni
T. Edahiro, N. Fujimura, A.Ashida, T. Ito
Proc. of the 8th International Workshop on Oxide Electronics (2001)

●Detailed structural analysis of Ce doped Si thin films
T.Yokota,N.Fujimura,Y.Morinaga,T.Ito
Proceedings of the First International Conference on the Physics and Applications of Spin-Related Phenomena in Semiconductors
Physica E: Low-dimensional Systems and Nanostructures10,1–3(May 2001)237–241
http://www.sciencedirect.com/science/article/pii/S138694770100090X

●Magnetic properties of Er andEr, O-dopedGaAs grown by organometallic vapor phase epitaxy
Y. Morinagaa, T. Edahiroa, N. Fujimuraa, T. Itoa, T. Koideb, Y. Fujiwarab, Y. Takedab
Physica E 10 ,1-3(2001)391–394
http://ac.els-cdn.com/S1386947701001230/1-s2.0-S1386947701001230-main.pdf?_tid=4119617e-620b-11e3-8ad3-00000aacb35f&acdnat=1386728802_c91c08e2deed2636c63f493ef997470b

●Magnetic and magneto-transport properties of ZnO :Ni &lms
T. Wakano, N. Fujimura , Y. Morinaga, N. Abe, A. Ashida, T. Ito
Physica E 10 (2001) 260–264
http://ac.els-cdn.com/S1386947701000959/1-s2.0-S1386947701000959-main.pdf?_tid=832bf61c-620b-11e3-b65e-00000aab0f27&acdnat=1386728913_bab21244767145c6be3c4579991e1f42

●Improvement of Retention Property of YMnO₃/Y₂O₃/Si MFIS Capacitor
Norifumi Fujimura, Daisuke Ito, kousuke Kakkuno, Taichiro Ito
MRS symposium procssdings 655.cc3.11(2001)1-6
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8226106&fulltextType=RA&fileId=S1946427400623849

MRS 2000 fall meeting
-Nov. 2000, Boston, USA-
■ Improvement of Retention Property of YMnO₃/Y₂O₃/Si MFIS Capacitor.　Norifumi Fujimura

ICPS 25(25th International Conference on the Physics of Semiconductors)
-Osaka,Japan September 2000-
■ Magnetic and magneto-transport properties of Ce doped Si thin films　Norifumi Fujimura

PASPS 2000 (The International Conference on the Physics and Application of Spin-Related Phenomena in Semiconductors)
-September ,2000 Sendai,Japan-
■ Magnetic Property of Er or Er,O doped GaAs films　　Yasunori Morinaga
■ Detailed structural analysis for Ce doped Si thin films　　Takeshi Yokota
■ Magnetic and magneto-optical properties of ZnO:Ni films　　Toshifumi Wakano

International Symposium on Application of Ferroelectrics
-July. 2000,　　　　　　　　-
■ Effect of Carrier Concentration on the Magnetic Behavior of YMnO₃ Ceramics and thin films　　Norifumi Fujimura

● Effect of plasma-induced damage on interfacial reactions of titanium thin films on silicon surface
T. Yamaguchi, N. Fujimura, A. Hama, H. Niko and T. Ito
Applied Physics Letters, 76, 17(2000) 2358-2360
http://scitation.aip.org/content/aip/journal/apl/76/17/10.1063/1.126345

● Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C-V measurement; ferroelectricity in YMnO₃/Y₂O₃/Si structure
T. Yoshimura, N. Fujimura and T. Ito
Journal of Applied Physics, 87, 7(2000)3444-3449
http://scitation.aip.org/content/aip/journal/jap/87/7/10.1063/1.372364

● Improvement Y₂O₃/Si interface for FeRAM application
D. Ito, T. Yoshimura, N. Fujimura and T. Ito
Applied Surface Science, 159-160(2000) 138-142
http://www.sciencedirect.com/science/article/pii/S0169433200000854

● Influence of reactive ion etching damage on the schottky barrier hight of Ti/p-Si interface.
N. Fujimura, T. Yamaguchi, H.Kato, and T. Ito
Applied Surface Science; 159-160(2000)186-190
http://www.sciencedirect.com/science/article/pii/S0169433200000696

● 廃棄物処理マルチスメルターのシミュレーション
張　興和、高橋　礼二郎、八木　順一郎、大西　忠一、久米　正一
高温学会誌, 26(2000) 306-315

● Initial stage of thin film growth of pulsed laser deposited YMnO₃
Daisuke Ito, Norifumi Fujimura, Taichiro Ito
Jpn. J. Appl. Phys., 39(2000) 5525
http://jjap.jsap.jp/link?JJAP/39/5525/

● Effects of excess Si, excess Mg and Fe on precipitation in 6061 aluminum　alloys during recycling process.
A. Yamamoto, H.Tsubakino, A. Suehiro, A. Watanabe, T. Ohnishi and M. Kanno
Proc. of 7th Intern. Conf. on Aluminum Alloys (2000) 1-6
https://www.researchgate.net/publication/250338493

● Small-sized blust furnace system for waste as resources.
K. Uehara, K. Miyatake, T. Ohnishi, S. Kume and H. Harada
Proc. of Intern. Conf. on Steel and Society (2000)  1-6

● Precipitation in 6061 aluminum alloys containing intermetallic inclusion.
A. Yamamoto, H. Tsubakino, A. Suehiro, A. Watanabe, A. Noguchi, T. Ohnishi and M. Kanno
Proc. on 2nd Intern. Sym. on Designibg, Processing and Properties of Advanced Engineering Materials (2000)  1-8

● Evaluation of ferroelectricity in MFIS type Capacitor using pulsed C-V measurements
N. Fujimura, T. Yoshimura and T. Ito
Materials Research Soc. Symposium Proceedings, 596(2000)407-412
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8053923&fulltextType=RA&fileId=S1946427400203710

●Origin of Leakage Current of YMnO₃ Thin Films Prepared by the Sol-Gel Method
Hiroya Kitahara, Kiyoharu Tadanaga, Tsutomu Minami, Norifumi Fujimura, Taichiro Ito
Materials Research Soc. Symposium Proceedings, 596(2000)481-486
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8054098&fulltextType=RA&fileId=S1946427400203801

● Si:Ce薄膜における新規な磁気輸送現象
藤村　紀文、横田　壮司、森永　泰規、伊藤　太一郎
「スピン制御による半導体超構造の新展開」研究成果論文集(2000) 34-37

● Y₂O₃/Si界面の電気的評価とその強誘電体メモリーへの応用
藤村　紀文、伊藤　大輔、伊藤　太一郎
極薄シリコン酸化膜の形成・評価・信頼性シンポジウム講演論文集(2000)105-108

●Preparation and Ferroelectric Properties of YMnO₃ Thin Films with c-Axis Preferred Orientation by the Sol-Gel Method
H. Kitahata, K.Tadanaga, T.Minami, N.Fujimura
Journal of Sol-Gel Science and Technology 19(2000) 589–593
http://link.springer.com/article/10.1023%2FA%3A1008761327562

●Effect of Carrier Concentration on the Magnetic Behavior of Ferroelectric YMnO₃ Ceramics and Thin Films
N.Fujimura ,S.Yamamori, A.Nakamoto, D.Ito, T.Yokota, T.Ito
Proceedings of the 2000 12th IEEE International Symposium on(Vol.2)(2000)
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=942398&abstractAccess=no&userType=inst

●Magnetic and magneto-transport properties of Ce doped Si thin films
N.Fujimura, T.Yokota, Y.Morinaga, T.Ito
Proceedings 25th International Conference of Physics Semicond.Osaka2000(2000)1467-1488

6th International Workshop on Oxide Electronics
-Dec. 1999, University of Maryland, USA-
■ Is there any candidates of ferroelectric material for transistor type FeRAM?   Norifumi Fujimura
■ Polarization of Li-doped ZnO thin films on Si 　Tamaki Shimura

MRS 1999 fall meeting
-Nov.1999, Boston, USA-
■ Evaluation of ferroelectricitynin MFIS type capacitor using pulsed C-V measurement.　Norifumi Fujimura
■ Origin of leakage current of YMnO₃ thin films prepared by the sol-gel method　Hiroya Kitahata

International Symposium on Control of Semiconductor Interfaces 3rd ISCSI
-Oct.1999, Karuizawa,Japan-
■ Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Norifumi Fujimura
■ Improvement of Y₂O₃/Si interface for FeRAM application　　Daisuke Ito

MRS 1999 Spring meeting
-Apr.  1999, San Francisco, USA-
■ YMnO₃ and YbMnO₃ thin films for FET type FeRAM　　Norifumi Fujimura
■ Exotic doping for ZnO thin films: Possibility of monolithic optical integrated circuit　Norifumi Fujimura
■ Variety of spin structure in Si:Ce　Norifumi Fujimura
■ Magnetic properties of dilutely Ce-doped Si　Yasunori Morinaga
■ Detailed C-V analysis for YMnO₃/Y₂O₃/Si structure　　Takeshi Yoshimura
■ Preparation of CuInS₂ absorber layer for a solar cell by electrochemical deposition　　Hiroki Ishizaki
■ Electric and magnetic properties of Ce doped Si thin films　Takeshi Yokota

3rd International Symposium on Control of Semiconductor Interfaces
-Jan.1999-
■Improvement of Y₂O₃/Si interface for FeRAM application　　D. Ito, T. Yoshimura, N. Fujimura, T. Ito

● Magnetic properties of dilutely Ce-doped Si
Y. Morinaga, N. Fujimura, T. Yokota, T. Ito Symposium
Proc. of Materials Research Society Spring Meeting (1999) 183

● Variety of spin structure in Si:Ce
N. Fujimura, Y. Morinaga, T. Yokota, T. Ito Symposium
Proc. of Materials Research Society Spring Meeting Abstracts (1999) 182

● YMnO₃ and YbMnO₃ thin films for FET type FeRAM application
N. Fujimura, T. Yoshimura, D. Ito, T. Ito
Symposium Proc. of Materials Research Society, 574 (1999) 317-322
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8043773

● Fabrication and dielectric properties of ZnO:X thin films by pulsed laser deposition method.
T. Shimura, T. Wakano, N. Fujimura, T. Ito
Technical Report of the Institute of Electronics Information and Communication Engineering ED98-250 SDM98-203(1999)27-32
http://ci.nii.ac.jp/els/110003200710.pdf?id=ART0003626673&type=pdf&lang=jp&host=cinii&order_no=&ppv_type=0&lang_sw=&no=1384236025&cp=

● Electric and magnetic properties of Ce doped Si
T.Yokota, Y. Morinaga, N. Fujimura ,T. Ito
Symposium Proc. of Materials Research Society Spring Meeting Abstracts (1999)183

● Exotic doping for ZnO thin films: possibility of monolithic optical intergrated circuit.
N. Fujimura, T. Shimura, T. Wakano, A. Ashida,　T. Ito
Symposium Proc. of Materials Research Society　574(1999) 317-322
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8043961

● Detailed C-V analysis for YbMnO₃/Y₂O₃/Si structure
T. Yoshimura, N. Fujimura, D. Ito, T. Ito
Symposia proc. of Materials Research Society　574(1999) 359-364
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8044090

● Si:Ce薄膜の磁気輸送異常
藤村紀文,　横田壮司,　森永泰規,　伊藤 太一郎
スピン制御による半導体超構造の新展開 研究報告会　論文集　13-14 (1999)

● Analysis of C-V behavior for RMnO₃ (R: rare earth element)/Y₂O₃/Si
T. Yoshimura, N. Fujimura, T. Ito
Technical Report of the Institute of Electronics Information and Communication Engineering ED98-250 SDM98-203(1999) 71－76

● Anomalous Magneto-transport  Behaviors of Si:Ce thin films.
N. Fujimura, T. Yokota, Y.Morinaga ,T. Ito
Proc. of the 5th Symposium on Spin Controlled Semiconductor Nanostructurs　125-127 (1999)

● Ferroelectricity of YMnO₃ thin films prepared via solution
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito
Appl. Phys. Lett.　75, 5(1999) 719-721
http://scitation.aip.org/content/aip/journal/apl/75/5/10.1063/1.124493

● Lowering the crystallization temperature of YMnO₃ thin films by the sol-gel method using an yttrium alkoxide
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito
Jpn. J. Appl. Phys.　38, 9B(1999)  5448-5451
http://jjap.jsap.jp/link?JJAP/38/5448/

● 太陽電池用CuInSe₂薄膜の機能傾斜化
芦田　淳、長田　貴弘、熊谷　倫一、伊藤　太一郎
傾斜機能材料, 13(1999) 155-158

International Symposium on Application of Ferroelectrics VI

-Aug.1998, Switzerland-
■ Electrical Characterizaiton of Ferroelectric YMnO₃ Films for MF(I)S-FET Application　Norifumi Fujimura

MRS 1997 fall meeting
-Dec. 1997, Boston, USA-
■ Composition and Electrode Effects on the Electrical Properties of SBT　　Norifumi Fujimura
■ Growth and Electrical Properties of YMnO₃ Thin Films on Si Substrates　　Takeshi Yoshimura

International Meeting on Ferroelectricity　(IMF-9)
-August , 1997, Seoul, Korea-
■ Growth and Properties of YMnO₃ Thin Films　　Takeshi Yoshimura

International Symposium on Control of Semiconductor Interfaces (2nd ISCSI)
-Oct.1996　Karuizawa,Japan-
■ Bistability of Electroluminescence in InAlAs/InP Type II MQW diodes　　Yukihide Hakone

ICVGE-9(The 9th International Conference on Vapor Growth&Epitaxy)
-Aug.1996,Colorado,USA-
■ Stability of Ordered Structure in SiGe Films Examined by Strain Energy Calculation　　Tsutomu Araki
■ Formation of YMnO₃ Films Directly on Si Substrate　　Nobuaki Aoki
■ Effect of Ce Doping on the Growth of ZnO Thin Films　　Yasunori Morinaga
■ The Initial Stage of BaTiO₃ Epitaxial Films on Etched and Annealed SrTiO₃ Substrates
Takeshi Yoshimura

The 10th International Symposium on the Application of Ferroelectrics
-Aug.1996,-
■ Sr/Bi Ratio Effects for SrxBiyTa₂O₉ Grown by Pulsed Laser Ablation.　　Norifumi Fujimura

MRS-J(The Materials Research Society of Japan)
-May.1996,　Chiba,Japan-
■ Examination of Structural Stability of SiGe Ordering by Strain Energy Calculation　　Tsutomu Araki
■ Preparation of Oriented CuInSe₂ Thin Film at Low Substrate Temperature　　Takafumi Okuma

MRS 1996 Spring meeting
-Apr.1996, San Francisco, USA-
■ Fabrication of YMnO₃ Thin Films.: New Candidate for Non-Volatile Memory Device
Norifumi Fujimura

7th Japan-US semonar on dielectric and piezoelectric ceramics

-Jan.1995, Tsukuba,Japan-
■ ReMnO₃(Re: rare earth) Thin Films as a Candidate for Non-volatile Memory Devices.Norifumi Fujimura