6th International Workshop on Oxide Electronics
-Dec. 1999, University of Maryland, USA-
■ Is there any candidates of ferroelectric material for transistor type FeRAM?   Norifumi Fujimura
■ Polarization of Li-doped ZnO thin films on Si 　Tamaki Shimura

MRS 1999 fall meeting
-Nov.1999, Boston, USA-
■ Evaluation of ferroelectricitynin MFIS type capacitor using pulsed C-V measurement.　Norifumi Fujimura
■ Origin of leakage current of YMnO₃ thin films prepared by the sol-gel method　Hiroya Kitahata

International Symposium on Control of Semiconductor Interfaces 3rd ISCSI
-Oct.1999, Karuizawa,Japan-
■ Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Norifumi Fujimura
■ Improvement of Y₂O₃/Si interface for FeRAM application　　Daisuke Ito

MRS 1999 Spring meeting
-Apr.  1999, San Francisco, USA-
■ YMnO₃ and YbMnO₃ thin films for FET type FeRAM　　Norifumi Fujimura
■ Exotic doping for ZnO thin films: Possibility of monolithic optical integrated circuit　Norifumi Fujimura
■ Variety of spin structure in Si:Ce　Norifumi Fujimura
■ Magnetic properties of dilutely Ce-doped Si　Yasunori Morinaga
■ Detailed C-V analysis for YMnO₃/Y₂O₃/Si structure　　Takeshi Yoshimura
■ Preparation of CuInS₂ absorber layer for a solar cell by electrochemical deposition　　Hiroki Ishizaki
■ Electric and magnetic properties of Ce doped Si thin films　Takeshi Yokota

3rd International Symposium on Control of Semiconductor Interfaces
-Jan.1999-
■Improvement of Y₂O₃/Si interface for FeRAM application　　D. Ito, T. Yoshimura, N. Fujimura, T. Ito