●ZnO crystal growth on microelectrode by electrochemical deposition method
Y.Kondo, A. Ashida, N. Nouzu, N. Fujimura
IOP Conf. Series: Materials Science and Engineering, 18, 092043 1-4 (2011).
https://www.researchgate.net/publication/253179147

●The Difference of Surface Treatment Method for ZnO Single Crystals and the Epitaxial Growth Process
Occurred by the Difference in the Surface Polarity
Tatsuru Nakamura,Norifumi Fujimura
Journal of the Society of Materials Science, Japan,Vol.60,No.11,pp983-987(2011)
http://doi.org/10.2472/jsms.60.983

●Fine-structured TiO2 ceramic patterns on the ceramic surface fabricated by replication
H D Kim, T Nakayama, B J Hong, K Imaki, T Yoshimura, T Suzuki, H Suematsu, S W Lee, Z Fu and K Niihara
MaterialsScienceandEngineering 20 (2011) 012003
http://iopscience.iop.org/1757-899X/20/1/012003/pdf/1757-899X_20_1_012003.pdf

●Characterization of Direct Piezoelectric Effect in 31 and 33 modes for Application to Vibration Energy Harvester
H. Miyabuchi, T. Yoshimura, S. Murakami and N. Fujimura
Japanese Journal of Applied Physics, 50(2011)09ND17
http://jjap.jsap.jp/link?JJAP/50/09ND17/

●Effect of Ferroelectric Polarization Domain on Electronic Transport Properties of Ferroelectric/ZnO Heterostructure
H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura
Japanese Journal of Applied Physics, 50 (2011) 09NA06
http://jjap.jsap.jp/link?JJAP/50/09NA06/

●Ce-Induced Reconstruction of Si(001) Surface Structures
Daisuke Shindo, Shusaku Sakurai, and Norifumi Fujimura
Japanese Journal of Applied Physics 50 (2011) 065701
http://jjap.jsap.jp/link?JJAP/50/065701/

●Direct Piezoelectricity of PZT Films and Application to Vibration Energy Harvesting
H. Miyabuchi, T. Yoshimura, S. Murakami and N. Fujimura
Journal of the Korean Physical Society, 59(2011) 2524-2527
https://www.researchgate.net/publication/272727613

●Effect of Lattice Misfit Strain on Crystal System and Ferroelectric Property of BiFeO₃ Epitaxial Thin Films
K. Ujimoto, T. Yoshimura, A. Ashida and N. Fujimura
Materials Science and Engineering, 18 (2011)092064
doi:10.1088/1757-899X/18/9/092064

●Characterization of Direct Piezoelectric Properties for Vibration Energy Harvesting
T. Yoshimura, H. Miyabuchi, S. Murakami, A. Ashida and N. Fujimura
Materials Science and Engineering, 18 (2011) 092026
doi:10.1088/1757-899X/18/9/092026

●Characterization of Field Effect Transistor with TiO₂ Nanotube Channel Fabricated by Dielecrophoresis
M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama N. Fujimura
Materials Science and Engineering, 18 (2011) 082019
doi:10.1088/1757-899X/18/8/082019

●Impedance analysis of controlled-polarization-type ferroelectric-gate TFT using RC lumped constant circuit
T. Fukushima, K. Maeda, T. Yoshimura, A. Ashida, and N. Fujimura
Japanese Journal of Applied Physics, 50 (2011)04DD16
http://jjap.jsap.jp/link?JJAP/50/04DD16/

●Initial Growth Process in Electrochemical Deposition of ZnO
Atsushi Ashida, Naoya Nouzu, and Norifumi Fujimura
Japanese Journal of Applied Physics 50 (2011) 05FB12
http://jjap.jsap.jp/link?JJAP/50/05FB12/

●Electronic Transport Property of a YbMnO₃/ZnO Heterostructure
H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura
Journal of the Korean Physical Society 58(2011)  792-796
http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=947E2F03-4C2C-4335-B926-6F4410D4E884

●Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films
T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Journal of Crystal Growth, 318(2011) 516-518
http://dx.doi.org/10.1016/j.jcrysgro.2010.10.044

●Fabrication of robust PbLa(Zr,Ti)O₃ capacitor structures using insulating oxide encapsulation layers for FeRAM integration.
T. Saito, T.Tsuji, K. Izumi, Y. Hirota, N. Okamoto, K.Kondo, T. Yoshimura, N. Fujimura, A. Kitajima A. Oshima
Electronics Letters, 47 (2011) 486
http://dx.doi.org/10.1049/el.2011.0461

●Structural analysis and electrical properties of pure Ge3N4 dielectric layers　formed by an atmospheric-pressure nitrogen plasma
Ryoma Hayakawa, Masashi Yoshida, Kouta Ide, Yoshiyuki Yamashita,Hideki Yoshikawa, Keisuke Kobayashi, Shunsuke Kunugi, Tsuyoshi Uehara,and Norifumi Fujimura
J.Appl.Phys. 110(2011)064103
http://aip.scitation.org/doi/full/10.1063/1.3638133