● Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor
T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, and N. Fujimura
Japanese Journal of Applied Physics, 47 (2008) 8874-8879
http://jjap.jsap.jp/link?JJAP/47/8874/

● Effects of Oxygen Annealing on Dielectric Properties of LuFeCuO₄
Y. Matsuo, M. Suzuki, Y. Noguchi, T. Yoshimura, N. Fujimura, K. Yoshi, N. Ikeda, S. Mori
Japanese Journal of Applied Physics, 47(2008) 8464-8467
http://jjap.jsap.jp/link?JJAP/47/8464/

● Electrical and optical properties of excess oxygen intercalated CuScO₂(0001) epitaxial films prepared by oxygen radical annealing
Y. Kakehi, K. Satoh, T. Yotsuya, A. Ashida, T. Yoshimura and N. Fujimura
Thin Solid Films, 516(2008) 5785-5789
http://www.sciencedirect.com/science/article/pii/S0040609007017129

● Dielectric properties of ferroelectric/DMS heterointerface using YMnO₃ and Ce doped Si
D. Shindo, T. Yoshimura and N. Fujimura
Applied Surface Science, 254(2008) 6218-6221
http://www.sciencedirect.com/science/article/pii/S0169433208004455

● Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films
S. Sakamoto, T. Oshio, A. Ashida, T. Yoshimura and N. Fujimura
Applied Surface Science, 254(2008) 6248-6251
http://www.sciencedirect.com/science/article/pii/S0169433208004108

● Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Applied Physics, 103 (2008) 093717
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4947858&abstractAccess=no&userType=inst

● Magnetic and Dielectric Properties of Yb(Mn_1-xAl_x)O₃ Thin Films
K. Fukae, T. Takahashi, T. Yoshimura and N. Fujimura
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 55(2008)  1056-1060
http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4524984

● Spin-dependent transport in a ZnMnO/ZnO heterostructure
K. Masuko, A. Ashida, T. Yoshimura and
N. Fujimura
Journal of Applied Physics, 103 (2008)07D124
http://scitation.aip.org/content/aip/journal/jap/103/7/10.1063/1.2837882

● Effects of Spontaneous and Piezoelectric Polarizations on Carrier Confinement at the Zn_0.88Mn_0.12O/ZnO Interface
K. Masuko, H. Sakiyama, A. Ashida, T. Yoshimura and N. Fujimura
Physica Status Solidi (c) 5(2008)  3107-3109
http://onlinelibrary.wiley.com/doi/10.1002/pssc.200779222/abstract

● Electro-Optic Property of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Physica Status Solidi (c) 5 (2008) 3110-3112
http://onlinelibrary.wiley.com/doi/10.1002/pssc.200779246/abstract

● Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO (0001) single-crystal substrates
K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Applied Physics, 103(2008) 043714
http://aip.scitation.org/doi/10.1063/1.2841056

● ZnO Thin Films Epitaxially Grown by Electrochemical Deposition Method with Constant Current
A. Ashida, A. Fujita, Y. Shim, K. Wakita and A. Nakahira
Thin Solid Films, 517(2008) 1461-1464
http://www.sciencedirect.com/science/article/pii/S0040609008010687

● ZnO Thin Films Prepared by the Electrochemical Method with Various Electrolytic Current
A. Fujita, A. Ashida and A. Nakahira
Transactions of the Materials Research Society of Japan, 33(2008) 1301-1304

● Raman Spectroscopy of ZnO Crystals under Microwave Irradiation
Atsushi Ashida, Tetsuro Tsujino, Yonggu Shim and Kazuki Wakita
Proceedings of Global Congress on Microwave Energy Application, 747-750 (2008)