●Epitaxial growth of CuScO₂ thin films on sapphire a-plane substrates by pulsed laser deposition
Y. Kakehi, K. Satoh, T. Yotsuya, S. Nakao, T. Yoshimura, A. Ashida and N. Fujimura
Journal of Applied Physics 97 (2005) 083535
http://scitation.aip.org/content/aip/journal/jap/97/8/10.1063/1.1868061

●Enhancement of ferromagnetic ordering in dielectric BaFe1−xZrxO3−d „x =0.5–0.8… single-crystal films by pulsed laser-beam deposition
T. Matsui, E. Taketani, N. Fujimura, H. Tsuda, and K. Morii
J. Appl.Phys 97 (2005)10M509
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5042290&abstractAccess=no&userType=inst

● Low-Temperature Growth and Characterization of Epitaxial YMnO₃/Y₂O₃/Si MFIS Capacitors with Thinner Insulator Layer
K. Haratake, N. Shigemitsu, M.Nishijima, T. Yoshimura and N. Fujimura
Jpn J. Appl. Phys. 44(2005)6977-6980
http://jjap.jsap.jp/link?JJAP/44/6977/

● Influence of Space Charge of the Dielectric Properties of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 245-247

● Low Temperature Growth of YMnO₃/Y₂O₃/Si Capacitor
K. Haratake, N. Shigemitsu, T. Yoshimura, A. Ashida and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 237-240

● Epitaxial Growth of ZnO Films on Ferroelectric YMnO₃ Deposited by PLD
R. Arai, N. Shigemitsu, K. Masuko, T. Oshio, T. Yoshimura, A. Ashida, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)241-244

● Comparison of Reactivity of Exited Nitrogen Species Generated in RF Plasma　and　Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 225-227

● Low-Temperature Formation of Silicon Nitride Films using Nitrogen Plasma near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 217-220

● Electrical Characterization of YMnO₃-based Metal-Ferroelectric-Insulator-Semiconductor Capacitor by Novel Method
T.Yoshimura, D Ito, K.Hratake, A. Ashida and N.Fujimura
Transactions of the Materials Research Society of Japan 30(2005)233-236

● Interface Characteristics of (Zn,Mn)O/ZnO grown on ZnO Substrate
A. Ashida, K. Masuko, T. Edahiro, T. Oshio and N. Fujimura
J. Crystal Growth, 275(2005) e2211-e2215
http://www.sciencedirect.com/science/article/pii/S0022024804018202

● Effects of electron irradiation on CuInS₂ crystals
K. Abe, Y. Miyoshi, A. Ashida, K. Wakita , T. Ohshima, N. Morishita, T. Kamiya, S. Watase and M. Izaki
Jpn. J. Appl. Phys., 44, 1B (2005)718
http://jjap.jsap.jp/link?JJAP/44/718/

● Fabrication of Silicon Nitride Film using Pure Nitrogen Plasma Generated near Atmospheric Pressure for III-V Semiconductor Fabrication
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Materials Research Society Symposium Proceedings 831(2005) 671-676
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8000704

● Influence of Space Charge on the Dielectric Properties of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)  245-247

● Epitaxial Growth of ZnO Films on Ferroelectric YMnO₃ Films  Deposited by The PLD Method
R. Arai, N. Shigemitsu, K. Masuko, T. Oshio, T. Yoshimura, A. Ashida, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 241-244

● The Comparison of Reactivity of Active Nitrogen Species Generated in RF Plasma and　Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)  225-227

● Low-Temperature Formation of Silicon Nitride Films using Nitrogen Plasma near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)217-220

●Preparation and properties of ferroelectric-insulator-semiconductor junctions using YMnO₃ thin films
N.Fujimura ,T.Yoshimura
Topics in Applied Physics,98, 5(Feb 2005)199-220
http://link.springer.com/chapter/10.1007/978-3-540-31479-0_11

●ZnMnO/ZnOヘテロ界面における二次元電子ガスの形成
益子　慶一郎、芦田　淳、大塩　武士、枝広　俊昭、藤村　紀文
応用電子物性分科会研究会会誌　第11巻第1号（2005）40-45

●マルチフェロイック材料の設計とデバイス応用
藤村　紀文
2005年7月22日応用物理学会結晶工学分科会123回テキスト（2005）33-40

●YMｎO3薄膜の形成とマルチフェロイック物性
藤村　紀文、吉村　武
セラミックデータブック2005　工業と製品　Vol.33　No.87（2005）128-130

●Ferromagnetic and Dielectric Behavior of Mn-Doped BaCoO3
Tomohiro Inoue, Toshiyuki Matsui, Norifumi Fujimura, Hiroshi Tsuda, and Kenji Morii
IEEE Transactions on  Magnetics, 41 (Oct. 2005)10
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=01519351

●Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution
T. Matsui, E. Taketani, H. Tsuda, N. Fujimura, and K. Morii
Appl.Phys.Lett.86 (2005)082902
http://scitation.aip.org/docserver/fulltext/aip/journal/apl/86/8/1.1868887.pdf?expires=1386737759&id=id&accname=freeContent&checksum=2755F2D34041BE5D79C2094CED7D1D69

Academic book

●YMnO₃薄膜の作成とマルチフェロイック物性
藤村紀文, 吉村武
セラミックデータブック2005　工業と製品, 33, 128-130 (2005)