Journal Papers

category

Journal Papers 2004

● P-E measurements for ferroelectric gate capacitors
T. Yoshimura and N.Fujimura
Integrated Ferroelectrics 61(2004) 59-64
http://www.tandfonline.com/doi/abs/10.1080/10584580490458847

● Optical Propagation Properties of ZnO Films Grown on Sapphire Substrate
A. Ashida, H. Ohta, T. Nagata, Y. Nakano, N. Fujimura and T. Ito
J. Appl. Phys., 95(2004) 1673-1676
http://scitation.aip.org/content/aip/journal/jap/95/4/10.1063/1.1639143

● The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering
T. Nagata, A. Ashida, N. Fujimura and T. Ito
J. Appl. Phys, 95(2004) 3923-3927
http://scitation.aip.org/content/aip/journal/jap/95/8/10.1063/1.1682682

● Electro-Optic Effect In ZnO:Mn Thin Films
T. Nagata, A. Ashida, N. Fujimura and T. Ito
Journal of Alloys and Compounds 371(2004)  157-159
http://www.sciencedirect.com/science/article/pii/S0925838803011125

● Synthesis of Bi(FexAl1-x)O3 Thin Films by Pulsed Laser Deposition and Its Structural Characterization
M. Okada, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys., 43(2004) 6609-6612
http://jjap.jsap.jp/link?JJAP/43/6609/

● Pulsed-Laser-Deposited YMnO3 Epitaxial Films with Square Polarization-Electric Field Hysteresis Loop and Low-Temperature Growth
N. Shigemitsu, H. Sakata, D. Ito, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys. 43(2004)  6613-6616
http://jjap.jsap.jp/link?JJAP/43/6613/

● Formation of Silicon Oxynitride Films with Low Leakage Current using N2/O2 Plasma near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, and N. Fujimura
Jpn. J. Appl. Phys. 43(2004) 7853-7856
http://jjap.jsap.jp/link?JJAP/43/7853/

● Analysis of Nitrogen Plasma Generated by A Pulsed Plasma System near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, and N. Fujimura
J. Appl. Phys. 96(2004) 6094-6096
http://scitation.aip.org/content/aip/journal/jap/96/11/10.1063/1.1810202

● Photoluminescence of CuInSe2 Nanowires
K. Wakita, Y. Miyoshi, M. Iwai, H. Fujibuchi and A. Ashida
Material Research Society Symposium Proceedings 789(2004)55-58

● Investigation of Retention Properties for YMnO3 Based Metal/Ferroelectric/Insulator/ Semiconductor Capacitors
T. Yoshimura, D. Ito, H. Sakata, N. Shigemitu, K. Haratake, A. Ashida and N. Fujimura
Material Research Society Symposium Proceedings 784(2004) 479-484
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8001059

● Control of Ferroelectric property of YMnO3 Epitaxial Films by Magnetic Field
N. Fujimura, N. Shigemitsu, T. Yoshimura and A. Ashida
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 61 (2004)
http://sciencelinks.jp/j-east/article/200423/000020042304A0772817.php

● Formatoin of Two-Dimentional Electron Gas and the Magnetotransport Behavior ofZnMnO/ZnO Heterostructure
A. Ashida, T. Edahiro, K. Masuko, T. Oshio and N. Fujimura
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 85-87 (2004)

● Synthesis and properties of Bi(FexAl1-x)O3 Multi-Ferroic Thin Films
N. Fujimura, M. Okada, A. Ashida and Yoshimura
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 233-236 (2004)
http://sciencelinks.jp/j-east/article/200424/000020042404A0772857.php

●Effect of oxygen deficiencies on magnetic properties of epitaxial grown BaFeO3 thin films on (100) SrTiO3 substrates
Taketani, E., Matsui, T., Fujimura, N., Morii, K.
IEEE Transactions on Magnetics,40, 4 II(Jul 2004)2736-2738
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1325625

●Magnetic and Electric Properties of BaMO3(M:Co,Mn,Fe)Oxide
T.Inoue, T.matsui, M.Miyai, N.Fujimura, K.Morii
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 67-70 (2004)
https://sciencelinks.jp/j-east/article/200423/000020042304A0772819.php

●New Field Effect Devices using Magnetic-Ferroelectric YMnO3/Diluted Magnetic Semiconductor Hetero-Junction
Norifumi Fujimura,Toshiyuju Matsui
The Murata Science Foundation Annual Report No.18 A21127 (2004)68-85