● The Progress of the YMnO₃/Y₂O₃/Si System for a Ferroelectric Gate Field Effect Transistor
N. Fujimura，D. Ito，T. Ito
Ferroelectrics，271(2002) 229-234
http://www.tandfonline.com/doi/abs/10.1080/00150190211525

● Electro-optic Property of ZnO : X (X = Li,Mg) Thin Films
T. Nagata，T. Shimura，A. Ashida，N. Fujimura，T. Ito
Journal of Crystal Growth，237-239(2002)533-537
http://www.sciencedirect.com/science/article/pii/S0022024801019571

● Retention Property Analysis of Epitaxially Grown YMnO₃/Y₂O₃/Si Capacitor
D. Ito，N. Fujimura，K. Kakuno，T. Ito
Ferroelectrics，271(2002)87-92
https://www.researchgate.net/publication/233344132

● Growth Process and Interfacial Structure of Epitaxial Y₂O₃/Si Thin Films Deposited by Pulsed Laser Deposition
K. Kakuno，D. Ito，N. Fujimura，T. Matsui，T. Ito
Journal of Crystal Growth，237 Part 1(2002) 487-491
http://www.sciencedirect.com/science/article/pii/S0022024801019492

● Thin Film Crystal Growth of BaZrO₃ at Low Oxygen Partial Pressure
Y. Kitano，T. Matsui，N. Fujimura，K. Morii，T. Ito
Journal of Crystal Growth，243 Part 1(2002) 164-169
http://www.sciencedirect.com/science/article/pii/S002202480201480X

● Ce Concentration Dependence on the Magnetic and Transport Properties of Ce Doped Si Epitaxial Films Prepared by Molecular Beam Epitaxy
T. Yokota，N. Fujimura，T. Wada，S. Hamasaki，T. Ito
Journal of Applied Physics, 91-10(2002) 7905-7907
http://scitation.aip.org/content/aip/journal/jap/91/10/10.1063/1.1451878

● Electro-optic Effect in Epitaxial ZnO:Mn Thin Films
T. Nagata，A. Ashida，Y. Takagi，N. Fujimura，T. Ito
Japanese Journal of Applied Physics，41(2002)6916-6918
http://jjap.jsap.jp/link?JJAP/41/6916/

● Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor Si_1-xCe_x films
T. Yokota，N. Fujimura，T. Wada，S. Hamasaki，T. Ito
Applied Physics Letters，81(2002) 4023-4025
http://scitation.aip.org/content/aip/journal/apl/81/21/10.1063/1.1524030

● 焼却煤じんの溶融処理
大西忠一，宮武和孝，原田浩希，黒谷臣知仁
高温学会誌，28-4(2002)181-186

● Thermit Reaction Applied to Waste Treatment.
H. Harada，T. Ohnishi，K. Miyatake，N. Takeda，M. Takaoka
Proc. of 2nd Intern. Conf. on Combustion, Incineration/Pyrolysis and Emission. , 505-512(2002)

●Structural, dielectric, and magnetic properties of epitaxially grown BaFeO₃ thin films
on (100) SrTiO₃ single-crystal substrates
T. Matsui, H. Tanaka, N. Fujimura, T. Ito, H. Mabuchi, and K. Morii
Appl. Phys. Lett. 81 (2002)2764
http://scitation.aip.org/content/aip/journal/apl/81/15/10.1063/1.1513213

●Crystal Growth and Interfacial Characterization of Dielectric BaZrO₃ Thin Films
on Si Substrates
Toshiyuki MATSUI, Yasuhiro KITANO, Norifumi FUJIMURA, Kenji MORII and Taichiro ITO
Jpn. J. Appl. Phys.  41 (2002) 6639–6642
http://jjap.jsap.jp/link?JJAP/41/6639/

●Effect of A-site substitution on the magnetic and dielectric behaviors of YMnO₃ based ferroelectric thin films
N.Fujimura, H.Sakata, D.Ito, T.Yokota, T.Ito
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics,page219; Nara; Japan; (28 May 2002 )
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1195909

●Siの磁性
藤村　紀文
マテリアルインテグレーション　15巻5号（2002）19-24

●YMnO₃/Y₂O₃/Siエピタキシャル構造を用いたMFISキャパシタの物性
藤村　紀文、吉村　武、伊藤　大輔、伊藤　太一郎
電気学会　電子材料研究会資料　EFM-02-15(2002年6月）39-44

●The Effect of Leakage Current on the Retention Property of YMnO₃ Based MFIS Capacitor
Daisuke Ito, Norifumi Fujimura& Taichiro Ito
Integrated Ferroelectrics ,49,1(2002)41-49
http://www.tandfonline.com/doi/pdf/10.1080/713718364