The 7th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors
–Yokohama, December、2001-
■Hall effect analysis of Ce doped Si thin films　　　T. Yokota

46th Annual Conference of Magnetism & Magnetic Materials
-Nov. 2001 Washington, USA-
■ Ce concentration dependence of magnetic and transport properties of Ce doped Si epitaxial thin films prepared by MBE
Takeshi Yokota

The 1st International Conference on FeRAM
-Nov.2001年,　Gotenba, Japan-
■ The Present Status of YMnO₃ Based Ferroelectric Gate FET’s (Invited)　　Norifumi Fujimura
■Dielectric Properties of Epitaxial Y₂O₃/Si Thin Films Deposited by a Pulsed Laser Deposition　　T. Matsui

International Meeting on Ferroelectricity IMF-10
-September 3-7,2001 Madrid,Spain-
■ The Progress of YMnO₃/Y₂O₃/Si System For Ferroelectric Gate Field Effect Transistors　　Norifumi Fujimura
■ Retention Property Analysis of Epitaxially Grown YMnO₃/Y₂O₃/Si Capacitor　　Daisuke Ito

8th International Workshop on Oxide Electronics
-Sept.2001, Osaka, Japan-
■ Crystal Growth and Dielectric Properties of BaZrO₃ Thin Films on Si substrates　　Norifumi Fujimura
■ Magnetic and Magneto-Transport Properties of Diluted Magnetic Semiconductor, ZnO:Ni　　Toshiaki Edahiro

ICCG-13/ICVGE-11(13th International Conference on Crystal Growth/
11th Internatonal Conference on Vapor Growth and Epitaxy)
-Jul.2001, Kyoto,Japan-
■ Crystal growth of BaZrO₃ thin films under very low oxygen pressure　　Yasuhiro Kitano
■ Epitaxial growth of highly Ce doped Si films by Molecular Beam Epitaxy　　Takeshi Yokota
■ Structure-property relationship of Ce/Si interfaces fabricated by Molecular Beam Epitaxy
Takamasa Wada
■ Growth process and interfacial structure of epitaxial Y₂O₃/Si thin films deposited by PLD
Kousuke Kakuno
■ Structure-Retention Property Relationship of YMnO₃/Y₂O₃/Si capacitor　　Daisuke Ito
■ Electro-optic Property of ZnO:X (X=Li,Mg) Thin Films　　Takahiro Nagata
■ Magnetic properties of ferromagnetic ZnO:Ni films　　Wakano

MRS 2000 fall meeting
-Nov. 2000, Boston, USA-
■ Improvement of Retention Property of YMnO₃/Y₂O₃/Si MFIS Capacitor.　Norifumi Fujimura

ICPS 25(25th International Conference on the Physics of Semiconductors)
-Osaka,Japan September 2000-
■ Magnetic and magneto-transport properties of Ce doped Si thin films　Norifumi Fujimura

PASPS 2000 (The International Conference on the Physics and Application of Spin-Related Phenomena in Semiconductors)
-September ,2000 Sendai,Japan-
■ Magnetic Property of Er or Er,O doped GaAs films　　Yasunori Morinaga
■ Detailed structural analysis for Ce doped Si thin films　　Takeshi Yokota
■ Magnetic and magneto-optical properties of ZnO:Ni films　　Toshifumi Wakano

International Symposium on Application of Ferroelectrics
-July. 2000,　　　　　　　　-
■ Effect of Carrier Concentration on the Magnetic Behavior of YMnO₃ Ceramics and thin films　　Norifumi Fujimura

6th International Workshop on Oxide Electronics
-Dec. 1999, University of Maryland, USA-
■ Is there any candidates of ferroelectric material for transistor type FeRAM?   Norifumi Fujimura
■ Polarization of Li-doped ZnO thin films on Si 　Tamaki Shimura

MRS 1999 fall meeting
-Nov.1999, Boston, USA-
■ Evaluation of ferroelectricitynin MFIS type capacitor using pulsed C-V measurement.　Norifumi Fujimura
■ Origin of leakage current of YMnO₃ thin films prepared by the sol-gel method　Hiroya Kitahata

International Symposium on Control of Semiconductor Interfaces 3rd ISCSI
-Oct.1999, Karuizawa,Japan-
■ Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Norifumi Fujimura
■ Improvement of Y₂O₃/Si interface for FeRAM application　　Daisuke Ito

MRS 1999 Spring meeting
-Apr.  1999, San Francisco, USA-
■ YMnO₃ and YbMnO₃ thin films for FET type FeRAM　　Norifumi Fujimura
■ Exotic doping for ZnO thin films: Possibility of monolithic optical integrated circuit　Norifumi Fujimura
■ Variety of spin structure in Si:Ce　Norifumi Fujimura
■ Magnetic properties of dilutely Ce-doped Si　Yasunori Morinaga
■ Detailed C-V analysis for YMnO₃/Y₂O₃/Si structure　　Takeshi Yoshimura
■ Preparation of CuInS₂ absorber layer for a solar cell by electrochemical deposition　　Hiroki Ishizaki
■ Electric and magnetic properties of Ce doped Si thin films　Takeshi Yokota

3rd International Symposium on Control of Semiconductor Interfaces
-Jan.1999-
■Improvement of Y₂O₃/Si interface for FeRAM application　　D. Ito, T. Yoshimura, N. Fujimura, T. Ito

International Symposium on Application of Ferroelectrics VI

-Aug.1998, Switzerland-
■ Electrical Characterizaiton of Ferroelectric YMnO₃ Films for MF(I)S-FET Application　Norifumi Fujimura

MRS 1997 fall meeting
-Dec. 1997, Boston, USA-
■ Composition and Electrode Effects on the Electrical Properties of SBT　　Norifumi Fujimura
■ Growth and Electrical Properties of YMnO₃ Thin Films on Si Substrates　　Takeshi Yoshimura

International Meeting on Ferroelectricity　(IMF-9)
-August , 1997, Seoul, Korea-
■ Growth and Properties of YMnO₃ Thin Films　　Takeshi Yoshimura

International Symposium on Control of Semiconductor Interfaces (2nd ISCSI)
-Oct.1996　Karuizawa,Japan-
■ Bistability of Electroluminescence in InAlAs/InP Type II MQW diodes　　Yukihide Hakone

ICVGE-9(The 9th International Conference on Vapor Growth&Epitaxy)
-Aug.1996,Colorado,USA-
■ Stability of Ordered Structure in SiGe Films Examined by Strain Energy Calculation　　Tsutomu Araki
■ Formation of YMnO₃ Films Directly on Si Substrate　　Nobuaki Aoki
■ Effect of Ce Doping on the Growth of ZnO Thin Films　　Yasunori Morinaga
■ The Initial Stage of BaTiO₃ Epitaxial Films on Etched and Annealed SrTiO₃ Substrates
Takeshi Yoshimura

The 10th International Symposium on the Application of Ferroelectrics
-Aug.1996,-
■ Sr/Bi Ratio Effects for SrxBiyTa₂O₉ Grown by Pulsed Laser Ablation.　　Norifumi Fujimura

MRS-J(The Materials Research Society of Japan)
-May.1996,　Chiba,Japan-
■ Examination of Structural Stability of SiGe Ordering by Strain Energy Calculation　　Tsutomu Araki
■ Preparation of Oriented CuInSe₂ Thin Film at Low Substrate Temperature　　Takafumi Okuma

MRS 1996 Spring meeting
-Apr.1996, San Francisco, USA-
■ Fabrication of YMnO₃ Thin Films.: New Candidate for Non-Volatile Memory Device
Norifumi Fujimura

7th Japan-US semonar on dielectric and piezoelectric ceramics

-Jan.1995, Tsukuba,Japan-
■ ReMnO₃(Re: rare earth) Thin Films as a Candidate for Non-volatile Memory Devices.Norifumi Fujimura