Material Research Society Fall Meeting
-Boston, USA, November,2006-
■ Multiferroic Behaviors of Ferroelectric Ferromagnet, YbMnO₃ Epitaxial Film. Norifumi Fujimura
■ Polarization Control Type FET with a Ferroelectric Gate and a Polar Semiconductor. Norifumi Fujimura ■ Conduction Characteristics of Charge Ordering Type Ferroelectrics, YFe₂O₄-δ. Ken Imamura
■ Magnetic and Ferroelectric Properties of YMnO₃ Epitaxial Thin Films. Kazuhiro Maeda

13th International Workshop on Oxide Electronics
-Ischia, Italy, October, 2006-
■ Cross-Correlation of Ferroelectric Ferromagnet, YbMnO₃ Epitaxial Films. Norifumi Fujimura
■ Controlled Polarization Type FET with a Ferroelectric Gate and a Polar Semiconductor
Norifumi Fujimura
■ Mn Concentration Dependence of Optical Property of ZnMnO Thin Films. Tadahiro Fukushima

The 6th Japan-Korea Conference on Ferroelectrics(第６回日韓強誘電体会議JKC-FE06）
-Sendai, Japan, August,2006-
■ Electrical Conduction Properties of Charge Ordering Type Ferroelectrics YFe₂O₄-δ . Ken Imamura
■ Nonvolatile Memory Operation of Ferroelectric-Gate ZnO Channel Thin-film Transistors
Takeshi Yoshimura

The 17th International Conference on Magnetism
-Kyoto, Japan, August,2006-
■ Magnetic Properties of Low Temperature Grown Si:Ce Thin Films on (001) Si Substrate.
Takemi Terao
■ Preparation og ZnMnO Thin Films on ZnO Single Crystal Substrate (000-1) and its Magnetic Properties. Keiichiro Masuko

IEEE International Symposium on the Applications of Ferroelectrics(ISAF2006)
-NorthCarolina, USA, July, 2006-
■ Fabrication and Electrical Characterization of ZnO/YMnO₃ Ferroelectric Gate Piezoelectric-Semiconductor Thin-film Transistors. Takeshi Yoshimura

International Conference on Integrated Ferroelectrics
-Waikiki, USA, April, 2006-
■ Multi-Ferroic Properties of YMnO₃ Epitaxial Films. NorifumiFujimura
■ Ferroelectric Gate Transistors using YMnO₃/ZnO Gate Structure. NorifumiFujimura

2006 International Meeting for Future of Electron Devices, Kansai
-Kyoto, Japan, April, 2006-
■ Fabrication of YMnO₃ Epitaxial Thin Films and　the Magnetic-Ferroelectric Correlation Phenomena.　　Kazuhiro Maeda

● Electro-optical effect in ZnO:Mn thin films prepared by Xe sputtering
A. Ashida, T. Nagata and N. Fujimura
Journal of Applied Physics 99 (2006) 013509
http://scitation.aip.org/content/aip/journal/jap/99/1/10.1063/1.2150596

● Reaction of Si with excited nitrogen species in pure nitrogen plasma near atmospheric pressure R.Hayakawa, T.Yoshimura, A.Ashida, T.Uehara and N.Fujimura
Thin Solid Films 506-507(2006) 423-426
http://www.sciencedirect.com/science/article/pii/S0040609005013088

● Photoluminescence properties peculiar to the Mn-related transition in a lightly alloyed ZnMnO thin film grown by pulsed laser deposition
M . Nakayama, H . Tanaka, K . Masuko, T. Fukushima, A . Ashida, N . Fujimura
Applied Physics Letters 88(2006) 241908
http://scitation.aip.org/content/aip/journal/apl/88/24/10.1063/1.2209719

● Growth and Ferromagnetic Properties of Ferroelectric YbMnO₃ Thin Films
T. Takahashi, T. Yoshimura and N. Fujimura
Jpn. J. Appl. Phys. 45(2006) 7329-7331
http://jjap.jsap.jp/link?JJAP/45/7329/

● Single-wall Carbon Nanotube Field Effect Transistors with Non-volatile Memory Operation
T. Sakurai, T. Yoshimura, S. Akita, N. Fujimura, Y.Nakayama
Jpn. J. Appl. Phys. 45(2006) L1036 -L1038
http://jjap.jsap.jp/link?JJAP/45/L1036/

● Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure
R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara, M. Tagawa and Y. Teraoka
Journal of Applied Physics 100 (2006) 073710
http://scitation.aip.org/content/aip/journal/jap/100/7/10.1063/1.2353781

● Effect of Additional Oxygen for the Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure
R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura and T. Uehara
Jpn. J. Appl. Phys., 45(2006)9025-9028
http://jjap.jsap.jp/link?JJAP/45/9025/

● Fabrication of YMnO₃ Epitaxial Thin Films Films and the Magnetic-Ferroelectric Correlation Phenomena
K.Maeda, N.Shigemitsu,T.Yoshimura and N.Fujimura
Transactions of the Materials Research Society of Japan 31(2006) 185-188
http://sciencelinks.jp/j-east/list.php?id=000020061206A0225525&check_display.x=67&check_display.y=13

● Mn Doping Effects on Dielectric Properties of ZnO Epitaxial Films
T.oshio,A.Ashida,T.Yoshimura and N.fujimura
Transactions of the Materials Research Society of Japan 31(2006) 189-192
http://sciencelinks.jp/j-east/article/200612/000020061206A0225526.php

● The Nitridation Process of Silicon with Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 31(2006) 161-164
https://sciencelinks.jp/j-east/article/200612/000020061206A0225519.php

● Electric and Magnetic Properties of Ba(Co,Mn)O_3-δ Epitaxial thin films
T. Inoue, T. Matsui, H.Tsuda, T. Yoshimura, N. Fujimura and K. Morii
Transactions of the Materials Research Society of Japan 31(2006)193-196
http://sciencelinks.jp/j-east/list.php?id=000020061206A0225527&check_display.x=57&check_display.y=10

● Fabrication of YMnO₃ Epitaxial Thin Films and the Magnetic-Ferroelectric Correlation Phenomena
K. Maeda, N. Shigemitsu, T. Yoshimura and N. Fujimura
Proceeding, 2006 International Meeting for Future of Electron Devices, Kansai, (2006)
http://sciencelinks.jp/j-east/article/200612/000020061206A0225525.php

●Magnetic and ferroelectric properties of YMnO₃ epitaxial thin films
Maeda, K., Yshimura, T., Fujimura, N.
Materials Research Society Symposium Proceedings, 966(2006)57-62
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8160836

Commentary, review

●強誘電体ゲートトランジスタ用薄膜
藤村紀文
マテリアルインテグレーション, 9 (2006).

●強誘電体電子デバイスの展望
吉村　武、藤村　紀文
金属学会セミナー・テキスト　非シリコン半導体の現状と展望（2006）

●Multiferroic phenomena in ferroelectric magnet
Norifumi FUJIMURA, Takeshi YOSHIMURA
OYO BUTURI Vol.75 No.6 p.713 (2006)
https://www.jsap.or.jp/ap/2006/06/ob750713-e.xml

●多結晶薄膜の形成
藤村　紀文
応用物理学会結晶工学分科会スクールテキスト第8版（2006）69-78

12th US-Japan Seminar on Dielectric and Piezoelectric Ceramics
-Maryland, USA, November,2005-
■ Synthesis and Structural Characterization of Bi(FexAl1-x)O₃ Thin Films.　　Takeshi Yoshimura
■ Fabrication of Ferroelectric-gate Transistors using YMnO₃ thin films.　Takeshi Yoshimura

The 2005 IEEE International Magnetics Conference (Intermag2005)
-Nagoya, Japan, April, 2005-
■ Magnetic properties of low temperature grown Si:Ce thin films on (001) Si substrate by molecular beam epitaxy.　　Takemi Terao

Prospects in Magnetic Oxide Thin Films and Heterostructures
-Fontevraud, France, April, 2005-
■ ZnO Magneto-Capacitance of YMnO₃ Epitaxial Films.　　Norifumi Fujimura
■ Fabrication and transport properties of ZnMnO/ZnO Hetero-structure with atomically flat interface.　Keiichirou Masuko

●Epitaxial growth of CuScO₂ thin films on sapphire a-plane substrates by pulsed laser deposition
Y. Kakehi, K. Satoh, T. Yotsuya, S. Nakao, T. Yoshimura, A. Ashida and N. Fujimura
Journal of Applied Physics 97 (2005) 083535
http://scitation.aip.org/content/aip/journal/jap/97/8/10.1063/1.1868061

●Enhancement of ferromagnetic ordering in dielectric BaFe1−xZrxO3−d „x =0.5–0.8… single-crystal films by pulsed laser-beam deposition
T. Matsui, E. Taketani, N. Fujimura, H. Tsuda, and K. Morii
J. Appl.Phys 97 (2005)10M509
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5042290&abstractAccess=no&userType=inst

● Low-Temperature Growth and Characterization of Epitaxial YMnO₃/Y₂O₃/Si MFIS Capacitors with Thinner Insulator Layer
K. Haratake, N. Shigemitsu, M.Nishijima, T. Yoshimura and N. Fujimura
Jpn J. Appl. Phys. 44(2005)6977-6980
http://jjap.jsap.jp/link?JJAP/44/6977/

● Influence of Space Charge of the Dielectric Properties of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 245-247

● Low Temperature Growth of YMnO₃/Y₂O₃/Si Capacitor
K. Haratake, N. Shigemitsu, T. Yoshimura, A. Ashida and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 237-240

● Epitaxial Growth of ZnO Films on Ferroelectric YMnO₃ Deposited by PLD
R. Arai, N. Shigemitsu, K. Masuko, T. Oshio, T. Yoshimura, A. Ashida, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)241-244

● Comparison of Reactivity of Exited Nitrogen Species Generated in RF Plasma　and　Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 225-227

● Low-Temperature Formation of Silicon Nitride Films using Nitrogen Plasma near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 217-220

● Electrical Characterization of YMnO₃-based Metal-Ferroelectric-Insulator-Semiconductor Capacitor by Novel Method
T.Yoshimura, D Ito, K.Hratake, A. Ashida and N.Fujimura
Transactions of the Materials Research Society of Japan 30(2005)233-236

● Interface Characteristics of (Zn,Mn)O/ZnO grown on ZnO Substrate
A. Ashida, K. Masuko, T. Edahiro, T. Oshio and N. Fujimura
J. Crystal Growth, 275(2005) e2211-e2215
http://www.sciencedirect.com/science/article/pii/S0022024804018202

● Effects of electron irradiation on CuInS₂ crystals
K. Abe, Y. Miyoshi, A. Ashida, K. Wakita , T. Ohshima, N. Morishita, T. Kamiya, S. Watase and M. Izaki
Jpn. J. Appl. Phys., 44, 1B (2005)718
http://jjap.jsap.jp/link?JJAP/44/718/

● Fabrication of Silicon Nitride Film using Pure Nitrogen Plasma Generated near Atmospheric Pressure for III-V Semiconductor Fabrication
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Materials Research Society Symposium Proceedings 831(2005) 671-676
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8000704

● Influence of Space Charge on the Dielectric Properties of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)  245-247

● Epitaxial Growth of ZnO Films on Ferroelectric YMnO₃ Films  Deposited by The PLD Method
R. Arai, N. Shigemitsu, K. Masuko, T. Oshio, T. Yoshimura, A. Ashida, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 241-244

● The Comparison of Reactivity of Active Nitrogen Species Generated in RF Plasma and　Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)  225-227

● Low-Temperature Formation of Silicon Nitride Films using Nitrogen Plasma near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)217-220

●Preparation and properties of ferroelectric-insulator-semiconductor junctions using YMnO₃ thin films
N.Fujimura ,T.Yoshimura
Topics in Applied Physics,98, 5(Feb 2005)199-220
http://link.springer.com/chapter/10.1007/978-3-540-31479-0_11

●ZnMnO/ZnOヘテロ界面における二次元電子ガスの形成
益子　慶一郎、芦田　淳、大塩　武士、枝広　俊昭、藤村　紀文
応用電子物性分科会研究会会誌　第11巻第1号（2005）40-45

●マルチフェロイック材料の設計とデバイス応用
藤村　紀文
2005年7月22日応用物理学会結晶工学分科会123回テキスト（2005）33-40

●YMｎO3薄膜の形成とマルチフェロイック物性
藤村　紀文、吉村　武
セラミックデータブック2005　工業と製品　Vol.33　No.87（2005）128-130

●Ferromagnetic and Dielectric Behavior of Mn-Doped BaCoO3
Tomohiro Inoue, Toshiyuki Matsui, Norifumi Fujimura, Hiroshi Tsuda, and Kenji Morii
IEEE Transactions on  Magnetics, 41 (Oct. 2005)10
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=01519351

●Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution
T. Matsui, E. Taketani, H. Tsuda, N. Fujimura, and K. Morii
Appl.Phys.Lett.86 (2005)082902
http://scitation.aip.org/docserver/fulltext/aip/journal/apl/86/8/1.1868887.pdf?expires=1386737759&id=id&accname=freeContent&checksum=2755F2D34041BE5D79C2094CED7D1D69

Academic book

●YMnO₃薄膜の作成とマルチフェロイック物性
藤村紀文, 吉村武
セラミックデータブック2005　工業と製品, 33, 128-130 (2005)

The 1st Imagine International Forum on venture-business
-Dec. 2004, Osaka, Japan-
■ Synthesis of Bi(Fe,Al)O₃ Thin Films by Pulsed Laser Deposition Method　　Morihiro Okada
■ Fabrication of ZnMnO/ZnO Hetero-Structure with Atomically Flat Interface　　Keiichirou Masuko

MRS 2004 fall meeting
-Nov. 2004, Boston, USA-
■ Multi-Ferroic Properties of YMnO₃ Epitaxial Films　　Norifumi Fujimura
■ Fabrication of Silicon Nitride Film using Pure Nitrogen Plasma Generated near Atmospheric Pressure
for III-V Semiconductor Fabrication　　Ryoma Hayakawa

11th International Workshop on Oxide Electronics
-Nov. 2004 Hakone, Japan-
■ Multi-ferroic Properties of YMnO₃ Epitaxial Films　　Norifumi Fujimura

The 5th Korea-Japan Conference on Ferroelectricity
-Aug. 2004, Seoul, Korea-
■ Multi-ferroic Properties of YMnO₃ Epitaxial Films　　Norifumi Fujimura

Dong-Eui University
–August, Busan, Korea、2004-
■Novel Transistors using multiferroic materials (Invited)　　　　　N.Fujimura

Yeungnam University
–August, Dongdaegu, Korea 2004-
■Novel Transistors using multiferroic materials (Invited)　　　　N.Fijimura

The 14th International Conference on Crystal Growth in Conjunction with
The 12th International Conference on Vapor Growth and Epitaxy
-Aug. 2004, Grenoble, France-
■ Interface Characteristics of ZnO/ZnMnO Grown on ZnO Substrate　　Atsushi Ashida

7th APCPST(Asia Pacific Conference on Plasma Science and Technology) and
17th SPSM(Symposium on Plasma Science for Materials)
-June, 2004, Fukuoka, Japan-
■ Reaction of Si with Excited Nitrogen Species in Pure Nitrogen Plasma near Atmospheric Pressure
Ryoma Hayakawa

2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology
-May, 2004, Tokyo, Japan-
■ Formation of Silicon Oxynitride Films with Low Leakage Current using N₂/O₂ Plasma near Atmospheric Pressure　　
Ryoma Hayakawa

Airforce Office of Science Research Zinc Oxide Workshop
-May. 2004, Maui, USA-
■ Magneto-Transport Properties of 2DEG Formed at ZnMnO/ZnO Interface (Invited)　Norifumi Fujimura

American Physical Society (APS) March Meeting 2004
-Mar. 2004, Montreal, Canada-
■ Anomaly in Magneto-Transport Properties in MBE Grown Ce doped Si Epitaxial Films
Norifumi Fujimura
■ Anomaly in Ferroelectric Property of YMnO₃ at around Neel Temperature　　Norifumi Fujimura

2004 Magnetism & Magnetic Materials Annual Conference Proceedings
-Jan. 2004, Anaheim, USA,-
■ Electric-Field Control of Magnetic Structure of Si:Ce Films in MOS Capacitors　　Norifumi Fujimura

● P-E measurements for ferroelectric gate capacitors
T. Yoshimura and N.Fujimura
Integrated Ferroelectrics 61(2004) 59-64
http://www.tandfonline.com/doi/abs/10.1080/10584580490458847

● Optical Propagation Properties of ZnO Films Grown on Sapphire Substrate
A. Ashida, H. Ohta, T. Nagata, Y. Nakano, N. Fujimura and T. Ito
J. Appl. Phys., 95(2004) 1673-1676
http://scitation.aip.org/content/aip/journal/jap/95/4/10.1063/1.1639143

● The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering
T. Nagata, A. Ashida, N. Fujimura and T. Ito
J. Appl. Phys, 95(2004) 3923-3927
http://scitation.aip.org/content/aip/journal/jap/95/8/10.1063/1.1682682

● Electro-Optic Effect In ZnO:Mn Thin Films
T. Nagata, A. Ashida, N. Fujimura and T. Ito
Journal of Alloys and Compounds 371(2004)  157-159
http://www.sciencedirect.com/science/article/pii/S0925838803011125

● Synthesis of Bi(Fe_xAl_1-x)O₃ Thin Films by Pulsed Laser Deposition and Its Structural Characterization
M. Okada, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys., 43(2004) 6609-6612
http://jjap.jsap.jp/link?JJAP/43/6609/

● Pulsed-Laser-Deposited YMnO₃ Epitaxial Films with Square Polarization-Electric Field Hysteresis Loop and Low-Temperature Growth
N. Shigemitsu, H. Sakata, D. Ito, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys. 43(2004)  6613-6616
http://jjap.jsap.jp/link?JJAP/43/6613/

● Formation of Silicon Oxynitride Films with Low Leakage Current using N₂/O₂ Plasma　near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, and N. Fujimura
Jpn. J. Appl. Phys. 43(2004) 7853-7856
http://jjap.jsap.jp/link?JJAP/43/7853/

● Analysis of Nitrogen Plasma Generated by A Pulsed Plasma System near Atmospheric　Pressure
R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, and N. Fujimura
J. Appl. Phys. 96(2004) 6094-6096
http://scitation.aip.org/content/aip/journal/jap/96/11/10.1063/1.1810202

● Photoluminescence of CuInSe₂ Nanowires
K. Wakita, Y. Miyoshi, M. Iwai, H. Fujibuchi and A. Ashida
Material Research Society Symposium Proceedings 789(2004)55-58

● Investigation of Retention Properties for YMnO₃ Based Metal/Ferroelectric/Insulator/　Semiconductor Capacitors
T. Yoshimura, D. Ito, H. Sakata, N. Shigemitu, K. Haratake, A. Ashida and N. Fujimura
Material Research Society Symposium Proceedings 784(2004) 479-484
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8001059

● Control of Ferroelectric property of YMnO₃ Epitaxial Films by Magnetic Field
N. Fujimura, N. Shigemitsu, T. Yoshimura and A. Ashida
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 61 (2004)
http://sciencelinks.jp/j-east/article/200423/000020042304A0772817.php

● Formatoin of Two-Dimentional Electron Gas and the Magnetotransport Behavior ofZnMnO/ZnO Heterostructure
A. Ashida, T. Edahiro, K. Masuko, T. Oshio and N. Fujimura
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 85-87 (2004)

● Synthesis and properties of Bi(Fe_xAl_1-x)O₃ Multi-Ferroic Thin Films
N. Fujimura, M. Okada, A. Ashida and Yoshimura
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 233-236 (2004)
http://sciencelinks.jp/j-east/article/200424/000020042404A0772857.php

●Effect of oxygen deficiencies on magnetic properties of epitaxial grown BaFeO₃ thin films on (100) SrTiO₃ substrates
Taketani, E., Matsui, T., Fujimura, N., Morii, K.
IEEE Transactions on Magnetics,40, 4 II(Jul 2004)2736-2738
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1325625

●Magnetic and Electric Properties of BaMO₃(M:Co,Mn,Fe)Oxide
T.Inoue, T.matsui, M.Miyai, N.Fujimura, K.Morii
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 67-70 (2004)
https://sciencelinks.jp/j-east/article/200423/000020042304A0772819.php

●New Field Effect Devices using Magnetic-Ferroelectric YMnO3/Diluted Magnetic Semiconductor Hetero-Junction
Norifumi Fujimura,Toshiyuju Matsui
The Murata Science Foundation Annual Report No.18 A21127 (2004)68-85

4th Asian Meeting on Ferroelectrics (AMF-4)
-Dec. 2003, Bangalore, India-
■ Present Status of Ferroelectric Gate Field Effect Transistors (Invited)　　Norifumi Fujimura

MRS 2003 fall meeting
-Nov. 2003, Boston, USA-
■ Magnetic and Ferroelectric Behaviors of Multi-Ferroic RMnO₃ Thin Films.　　Norifumi Fujimura
■ Investigation of Retention Properties for YMnO₃ Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors　　Takeshi Yoshimura

10th International Workshop on Oxide Electronics
-Sept. 2003 Augsburg, Germany-
■ Proposal of YMnO₃ Based Ferroic Gate FETs　　Norifumi Fujimura

The 10th European Meeting on Ferroelectricity
-Aug. 2003 Cambridge, UK-
■ Origin of the Retention Property of YMnO₃ Based MFIS Capacitors.　　Norifumi Fujimura
■ D-E Measurements for Ferroelectric Gate Capacitors.　　Takeshi Yoshimura

● Magnetic and Magneto-transport Properties of Solid Phase Epitaxially Grown Si:Ce Films
T. Yokota, N. Fujimura, T. Ito
J. Appl. Phys., 93(2003) 4045-4048
http://scitation.aip.org/content/aip/journal/jap/93/7/10.1063/1.1559436

● Ferroelectric Properties of YMnO₃ Epitaxial Films for Ferroelectric-Gate Field Effect Transistors
D. Ito, N. Fujimura, T. Yoshimura, T. Ito
J. Appl. Phys., 93(2003)5563-5567
http://scitation.aip.org/content/aip/journal/jap/93/9/10.1063/1.1564862

● Ferromagnetic and Ferroelectric Behaviors of A Site Substituted YMnO₃ Based Epitaxial Thin Films
N. Fujimura, D. Ito, H. Sakata T. Yoshimura, T. Yokota, T. Ito
J. Appl. Phys., 93(2003) 6990-6992
http://scitation.aip.org/content/aip/journal/jap/93/10/10.1063/1.1556165

● Formation of Two-Dimensional Electron Gas and the Magneto-Transport Behavior of ZnMnO/ZnO Heterostructure
T. Edahiro, N. Fujimura, T. Ito
J. Appl. Phys., 93(2003) 7673-7675
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5035225&abstractAccess=no&userType=inst

● The Effect of Carrier for Magnetic and Magneto-transport Properties of Si:Ce Films
T.Yokota, N.Fujimura, T.Wada, S. Hamasaki, T.Ito
J. Appl. Phys. 93(2003)7679-7681
http://scitation.aip.org/content/aip/journal/jap/93/10/10.1063/1.1556116

● Influence of Schottky and Poole-Frenkel emission on the retention property of YMnO₃ based Metal/Ferroelectric/Insulator/Semiconductor capacitors
D. Ito, N.Fujimura, T.Yoshimura, T.Ito
J. Appl. Phys., 94(2003)4036-4041
http://scitation.aip.org/content/aip/journal/jap/94/6/10.1063/1.1601292

● Improvement of Surface Morphology and Dielectric Property of YMnO₃ Films
H. Sakata, D. Ito, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys., 42(2003) 6003-6006
http://jjap.jsap.jp/link?JJAP/42/6003/

● Polarization Hysteresis Loops of Ferroelectric Gate Capacitors Measured by Sawyer-Tower Circuit
T. Yoshimura, N. Fujimura
Jpn. J. Appl. Phys., 42(2003)6011-6014
http://jjap.jsap.jp/link?JJAP/42/6011/

●Magnetic and dielectric properties of epitaxially grown BaFeO₃ thin films on SrTiO₃ single-crystal substrates
T.Matsui,H.Tanaka,E,Taketani,N.Fujimura, T.Ito, K.Morii
Journal of the Korean Physical Society,42, Issue SUPPL.,S1378(Apl,2003)

http://cat.inist.fr/?aModele=afficheN&cpsidt=14903131

●Magnetic properties of highly resistive BaFeO₃ thin films epitaxially grown on SrTiO₃ single-crystal substrates
T. Matsui, E. Taketani, N. Fujimura, T. Ito and K. Morii
J. Appl. Phys., 93(May 2003) 6993
http://scitation.aip.org/content/aip/journal/jap/93/10/10.1063/1.1556166

●Investigation of retention properties for YMnO₃ based metal ferroelectric insulator semiconductor capacitors
T.Yoshimura, D.Ito, H.Sakata, N.Shigemitsu, K.Haratake, A.Ashida, N.Fujimura
Materials Research Society Symposium – Proceedings 784(2003)479-484
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8001059&fulltextType=RA&fileId=S1946427400096998

47th Annual Conference on Magnetism & Magnetic Materials
-Nov. 2002 Florida, USA-
■ Ferromagnetic and Ferroelectric Behaviors of A Site Substituted YMnO₃ Based Epitaxial Thin Films　　Norifumi Fujimura
■ The effect of carrier for magnetic and magneto-transport properties of Si:Ce films.　　Takeshi Yokota ■ Formation of two dimensional electron gas of ZnMnO/ZnO heterostructure.　　Toshiaki Edahiro

European Materials Research Society FALL MEETING 2002
– Warsaw, Poland Oct. 2002-
■ Electro-Optic Effect in ZnO:Mn Thin Films　　Takahiro Nagata

The 2nd Intern. Conf. on Combustion, Incineration/Pyrolysis and Emission
-Sep.2002, Cheju,Korea-
■Thermite Reaction Applied to Waste Treatment.　　H. Harada，T. Ohnishi

International Joint Coference on Application of Ferroelectrics 2002
-May,2002,　Nara, Japan-
■ Growth Process and Interfacial Structure of Epitaxial Y₂O₃/Si Thin Films Deposited by Pulsed Laser Deposition　　Norifumi Fujimura
■ The Effect of Leakage Current for the Retention Property in the MFIS capacitor　　Daisuke Ito
■ Crystal Growth and Interface Characterization of Dielectric BaZrO₃ Thin Films on Si Substrates　　Yasuhiro Kitano
■ Effect of A-site Substitution on the Magnetic and Dielectric behaviors of YMnO₃ Based Ferroelectric Thin Films.　　Norifumi Fujimura
■ Electro-optic Effect in Epitaxial ZnO:Li Thin Films　　Takahiro Nagata

● The Progress of the YMnO₃/Y₂O₃/Si System for a Ferroelectric Gate Field Effect Transistor
N. Fujimura，D. Ito，T. Ito
Ferroelectrics，271(2002) 229-234
http://www.tandfonline.com/doi/abs/10.1080/00150190211525

● Electro-optic Property of ZnO : X (X = Li,Mg) Thin Films
T. Nagata，T. Shimura，A. Ashida，N. Fujimura，T. Ito
Journal of Crystal Growth，237-239(2002)533-537
http://www.sciencedirect.com/science/article/pii/S0022024801019571

● Retention Property Analysis of Epitaxially Grown YMnO₃/Y₂O₃/Si Capacitor
D. Ito，N. Fujimura，K. Kakuno，T. Ito
Ferroelectrics，271(2002)87-92
https://www.researchgate.net/publication/233344132

● Growth Process and Interfacial Structure of Epitaxial Y₂O₃/Si Thin Films Deposited by Pulsed Laser Deposition
K. Kakuno，D. Ito，N. Fujimura，T. Matsui，T. Ito
Journal of Crystal Growth，237 Part 1(2002) 487-491
http://www.sciencedirect.com/science/article/pii/S0022024801019492

● Thin Film Crystal Growth of BaZrO₃ at Low Oxygen Partial Pressure
Y. Kitano，T. Matsui，N. Fujimura，K. Morii，T. Ito
Journal of Crystal Growth，243 Part 1(2002) 164-169
http://www.sciencedirect.com/science/article/pii/S002202480201480X

● Ce Concentration Dependence on the Magnetic and Transport Properties of Ce Doped Si Epitaxial Films Prepared by Molecular Beam Epitaxy
T. Yokota，N. Fujimura，T. Wada，S. Hamasaki，T. Ito
Journal of Applied Physics, 91-10(2002) 7905-7907
http://scitation.aip.org/content/aip/journal/jap/91/10/10.1063/1.1451878

● Electro-optic Effect in Epitaxial ZnO:Mn Thin Films
T. Nagata，A. Ashida，Y. Takagi，N. Fujimura，T. Ito
Japanese Journal of Applied Physics，41(2002)6916-6918
http://jjap.jsap.jp/link?JJAP/41/6916/

● Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor Si_1-xCe_x films
T. Yokota，N. Fujimura，T. Wada，S. Hamasaki，T. Ito
Applied Physics Letters，81(2002) 4023-4025
http://scitation.aip.org/content/aip/journal/apl/81/21/10.1063/1.1524030

● 焼却煤じんの溶融処理
大西忠一，宮武和孝，原田浩希，黒谷臣知仁
高温学会誌，28-4(2002)181-186

● Thermit Reaction Applied to Waste Treatment.
H. Harada，T. Ohnishi，K. Miyatake，N. Takeda，M. Takaoka
Proc. of 2nd Intern. Conf. on Combustion, Incineration/Pyrolysis and Emission. , 505-512(2002)

●Structural, dielectric, and magnetic properties of epitaxially grown BaFeO₃ thin films
on (100) SrTiO₃ single-crystal substrates
T. Matsui, H. Tanaka, N. Fujimura, T. Ito, H. Mabuchi, and K. Morii
Appl. Phys. Lett. 81 (2002)2764
http://scitation.aip.org/content/aip/journal/apl/81/15/10.1063/1.1513213

●Crystal Growth and Interfacial Characterization of Dielectric BaZrO₃ Thin Films
on Si Substrates
Toshiyuki MATSUI, Yasuhiro KITANO, Norifumi FUJIMURA, Kenji MORII and Taichiro ITO
Jpn. J. Appl. Phys.  41 (2002) 6639–6642
http://jjap.jsap.jp/link?JJAP/41/6639/

●Effect of A-site substitution on the magnetic and dielectric behaviors of YMnO₃ based ferroelectric thin films
N.Fujimura, H.Sakata, D.Ito, T.Yokota, T.Ito
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics,page219; Nara; Japan; (28 May 2002 )
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1195909

●Siの磁性
藤村　紀文
マテリアルインテグレーション　15巻5号（2002）19-24

●YMnO₃/Y₂O₃/Siエピタキシャル構造を用いたMFISキャパシタの物性
藤村　紀文、吉村　武、伊藤　大輔、伊藤　太一郎
電気学会　電子材料研究会資料　EFM-02-15(2002年6月）39-44

●The Effect of Leakage Current on the Retention Property of YMnO₃ Based MFIS Capacitor
Daisuke Ito, Norifumi Fujimura& Taichiro Ito
Integrated Ferroelectrics ,49,1(2002)41-49
http://www.tandfonline.com/doi/pdf/10.1080/713718364