15th International Conference of Thin Films (ICTF-15)
-Nov.2011,　Kyoto-
■Preparation and the Properties of Electronic Ferroelectrics YbFe₂O₄ Epitaxial Films　Norifumi Fujimura

15th US-Japan Seminar on Dielectric and Piezoelectric Ceramics
-Kagoshima Japan Nov.2011-
■Direct piezoelectric property of BiFeO₃ epitaxial thin films　　T. Yoshimura

2011 MRS Spring Meeting
-San Francisco USA　2011-
■ Polarization Switching Behavior of Magnetoferroelectric YMnO₃ Epitaxial Films at around the Magnetic Phase Transition　TemperatureT.Yoshimura
■ Influence of crystal system on ferroelectric properties of (001) BiFeO₃ epitaxial thin films　K. Ujimoto

●ZnO crystal growth on microelectrode by electrochemical deposition method
Y.Kondo, A. Ashida, N. Nouzu, N. Fujimura
IOP Conf. Series: Materials Science and Engineering, 18, 092043 1-4 (2011).
https://www.researchgate.net/publication/253179147

●The Difference of Surface Treatment Method for ZnO Single Crystals and the Epitaxial Growth Process
Occurred by the Difference in the Surface Polarity
Tatsuru Nakamura,Norifumi Fujimura
Journal of the Society of Materials Science, Japan,Vol.60,No.11,pp983-987(2011)
http://doi.org/10.2472/jsms.60.983

●Fine-structured TiO2 ceramic patterns on the ceramic surface fabricated by replication
H D Kim, T Nakayama, B J Hong, K Imaki, T Yoshimura, T Suzuki, H Suematsu, S W Lee, Z Fu and K Niihara
MaterialsScienceandEngineering 20 (2011) 012003
http://iopscience.iop.org/1757-899X/20/1/012003/pdf/1757-899X_20_1_012003.pdf

●Characterization of Direct Piezoelectric Effect in 31 and 33 modes for Application to Vibration Energy Harvester
H. Miyabuchi, T. Yoshimura, S. Murakami and N. Fujimura
Japanese Journal of Applied Physics, 50(2011)09ND17
http://jjap.jsap.jp/link?JJAP/50/09ND17/

●Effect of Ferroelectric Polarization Domain on Electronic Transport Properties of Ferroelectric/ZnO Heterostructure
H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura
Japanese Journal of Applied Physics, 50 (2011) 09NA06
http://jjap.jsap.jp/link?JJAP/50/09NA06/

●Ce-Induced Reconstruction of Si(001) Surface Structures
Daisuke Shindo, Shusaku Sakurai, and Norifumi Fujimura
Japanese Journal of Applied Physics 50 (2011) 065701
http://jjap.jsap.jp/link?JJAP/50/065701/

●Direct Piezoelectricity of PZT Films and Application to Vibration Energy Harvesting
H. Miyabuchi, T. Yoshimura, S. Murakami and N. Fujimura
Journal of the Korean Physical Society, 59(2011) 2524-2527
https://www.researchgate.net/publication/272727613

●Effect of Lattice Misfit Strain on Crystal System and Ferroelectric Property of BiFeO₃ Epitaxial Thin Films
K. Ujimoto, T. Yoshimura, A. Ashida and N. Fujimura
Materials Science and Engineering, 18 (2011)092064
doi:10.1088/1757-899X/18/9/092064

●Characterization of Direct Piezoelectric Properties for Vibration Energy Harvesting
T. Yoshimura, H. Miyabuchi, S. Murakami, A. Ashida and N. Fujimura
Materials Science and Engineering, 18 (2011) 092026
doi:10.1088/1757-899X/18/9/092026

●Characterization of Field Effect Transistor with TiO₂ Nanotube Channel Fabricated by Dielecrophoresis
M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama N. Fujimura
Materials Science and Engineering, 18 (2011) 082019
doi:10.1088/1757-899X/18/8/082019

●Impedance analysis of controlled-polarization-type ferroelectric-gate TFT using RC lumped constant circuit
T. Fukushima, K. Maeda, T. Yoshimura, A. Ashida, and N. Fujimura
Japanese Journal of Applied Physics, 50 (2011)04DD16
http://jjap.jsap.jp/link?JJAP/50/04DD16/

●Initial Growth Process in Electrochemical Deposition of ZnO
Atsushi Ashida, Naoya Nouzu, and Norifumi Fujimura
Japanese Journal of Applied Physics 50 (2011) 05FB12
http://jjap.jsap.jp/link?JJAP/50/05FB12/

●Electronic Transport Property of a YbMnO₃/ZnO Heterostructure
H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura
Journal of the Korean Physical Society 58(2011)  792-796
http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=947E2F03-4C2C-4335-B926-6F4410D4E884

●Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films
T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Journal of Crystal Growth, 318(2011) 516-518
http://dx.doi.org/10.1016/j.jcrysgro.2010.10.044

●Fabrication of robust PbLa(Zr,Ti)O₃ capacitor structures using insulating oxide encapsulation layers for FeRAM integration.
T. Saito, T.Tsuji, K. Izumi, Y. Hirota, N. Okamoto, K.Kondo, T. Yoshimura, N. Fujimura, A. Kitajima A. Oshima
Electronics Letters, 47 (2011) 486
http://dx.doi.org/10.1049/el.2011.0461

●Structural analysis and electrical properties of pure Ge3N4 dielectric layers　formed by an atmospheric-pressure nitrogen plasma
Ryoma Hayakawa, Masashi Yoshida, Kouta Ide, Yoshiyuki Yamashita,Hideki Yoshikawa, Keisuke Kobayashi, Shunsuke Kunugi, Tsuyoshi Uehara,and Norifumi Fujimura
J.Appl.Phys. 110(2011)064103
http://aip.scitation.org/doi/full/10.1063/1.3638133

The 3rd international symposium on innovations in advanced materials for optics & electronics
-Toyama, Japan　October 2010-
■ Characterization of direct piezoelectric properties of PZT films for vibration energy harvesting
T. Yoshimura

3rd international congress on ceramics
-Osaka, Japan　October 2010-
■ Charactrization of direct piezoelectric effect for vibration energy harvesting　T. Yoshimura
■ ZnO crystal growth on micro electrode by electrochemical deposition method　Y. Kondo
■ ZnO thin films grown by electrochemical deposition method with pulsed electrolytic current and its electrical conductivity
A. Ashida
■ Effect of lattice misfit strain on crystal system and ferroelectric property of BiFeO₃ epitaxial thin films
K. Ujimoto
■ Characterization of electric transport of field effect transistor with TiO₂ nanotube channel　M. Ishii

2010 International Conference on Solid State Devices and Materials (SSDM2010)
-Tokyo, Japan　September 2010-
■ Impedance analysis of controlled-polarization-type ferroelectric-gate TFT using RC distributed constant circuit
T. Fukushima

17th international workshop on oxide electronics
-Awaji, Japan　September 2010-
■ Device characterization of controlled polarization type ferroelectric gate TFT　T. Yoshimura

17th international conference on ternary and multinary compounds
-Baku, Azerbaijan　September 2010-
■ Initial growth process in the electrochemical deposition of ZnO　A. Ashida

The 8th Japan-Korea Conference on Ferroelectrics
-Himeji, Japan　2010-
■ Electronic transport property of YbMnO₃/ZnO heterostructure　H. Yamada
■ Direct piezoelectricity of PZT films and application to vibration energy harvesting H.Miyabuchi
■ Polarization switching behavior of magnetoferroelectric RMnO₃ epitaxial films at around the magnetic phase transition temperature（Invited）　T. Yoshimura

12th international conference on modern materials and technologies
–Montecatini Terme, Italy, June　2010-
■Novel spintronics application of ZnO based DMS.　　N. Fujimura （Invited）
■Polarization switching of YMnO₃ thin films at around magnetic transition temperature.　
　K. Maeda

The 16th International Conference on Crystal Growth(ICCG-16)
-Beijing, China　June 2010-
■ Influence of target surface microstructure on the morphological and electrical properties of pulsed laser deposited BiFeO₃ epitaxial thin films　K. Ujimoto
■ Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films　T. Nakamura

2010 Taiwan-Japan bilateral technology interchange project “Workshop on transparent conductive oxide thin films　for electronics and optics in green energy
-Taoyuan, Taiwan　2010-
■ Controlled polarization type thin film transistors using ferroelectric/polar semiconductor interface
N. Fujimura

12th International Ceramics Congress (CIMTEC2010)
-Toscana, Italy　May 2010-
■ Novel spintronics application of ZnO based DMS　　　N. Fujimura
■ Polarization switching of YMnO₃ thin films at around magnetic transition temperature　　K. Maeda

11th joint magnetism and magnetic materials (MMM) intermag conference
-Washington DC, America, January, 2010-
■The effects of aluminum doping for the magneto-transport property of Si:Ce thin films.　　D. Shindo

●Fabrication of the finestructured alumina porous materials with nanoimprint method
Kim, H.D, T.Nakayama, J.Yoshimura, K.Imaki, T.Yoshimura,H. Suematsu, T.Suzuki, K.Niihara
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan,117(April 2009)534-536
https://www.jstage.jst.go.jp/article/jcersj2/117/1364/117_1364_534/_pdf

●Fine-structured patterns of porous alumina material fabricated by a replication method
Hong Dae Kim, Tadachika Nakayama, Byung Jin Hong, Kazuyoshi Imaki, Takeshi Yoshimura, Tsuneo Suzuki, Hisayuki Suematsu, Koichi Niihara
Journal of the European Ceramic Society,30( Oct 2010) 2735–2739
http://ac.els-cdn.com/S0955221910002293/1-s2.0-S0955221910002293-main.pdf?_tid=8d15ccc8-ce96-11e3-add0-00000aacb361&acdnat=1398663360_d53cb23b161bebba12b9d05326948be1

●Fine-structured ZnO patterns with sub-micrometer on the ceramic surface fabricated by a replication method
Hong Dae KIM, Tadachika NAKAYAMA, Byung Jin HONG, Kazuyoshi IMAKI, Takeshi YOSHIMURA, Tsuneo SUZUKI, Hisayuki SUEMATSU,  Koichi NIIHARA
Journal of the Ceramic Society of Japan,118(Dec 2010)1384,P 1140-1143
https://www.jstage.jst.go.jp/article/jcersj2/118/1384/118_1384_1140/_pdf

●Effects of Mg doping on structural, optical, and electrical properties of CuScO2(0001) epitaxial films
Yoshiharu Kakehi , Kazuo Satoh , Takeshi Yoshimura , Atsushi Ashida , Norifumi Fujimura
Vacuum 84.5.10 (2010) 618–621
http://www.sciencedirect.com/science/article/pii/S0042207X09003509

● Control of cathodic potential for deposition of ZnO by constant-current electrochemical method
N. Nouzu, A. Ashida, T. Yoshimura, N. Fujimura
Thin Solid Films 518 (2010) 2957-2960
http://dx.doi.org/10.1016/j.tsf.2009.09.194

● Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition
T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Thin Solid Films 518 (2010) 2971-2974
http://dx.doi.org/10.1016/j.tsf.2009.09.184

● Control of carrier concentration of p-type transparent conducting CuScO₂(0001) epitaxial films
Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura
Thin Solid Films 518 (2010) 3097-3100
http://dx.doi.org/10.1016/j.tsf.2009.07.204

● Direct Piezoelectric Properties of Mn-Doped ZnO Epitaxial Films
T. Yoshimura, H. Sakiyama, T. Oshio, A. Ashida, N. Fujimura
Jpn. J. Appl. Phys, 49 (2010) 021501
http://jjap.jsap.jp/link?JJAP/49/021501/

● The effects of aluminum doping for the magnetotransport property of Si:Ce thin films
D. Shindo, K. Fujii, T. Terao, S. Sakurai, S. Mori, K. Kurushima, N. Fujimura
Journal of Applied Physics, 107 (2010)  09C308
http://dx.doi.org/10.1063/1.3352981

● Dielectric behavior of YMnO₃ epitaxial thin film at around magnetic phase transition temperature
K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura
Advances in Science and Technology, 67(2010)176-181
http://www.scientific.net/AST.67.176

● Fabrication and magneto-transport properties of Zn_0.88-xMg_xMn_0.12O/ZnO heterostructures grown on ZnO single-crystal substrates
K. Masuko, T. Nakamura, A. Ashida, T. Yoshimura, N. Fujimura
Advances in Science and Technology, 75 (2010) 1-8
http://www.scientific.net/AST.75.1

● Ferroelectric properties of magnetoferroelectric YMnO₃ epitaxial films at around the neel temperature
T. Yoshimura, K. Maeda, A. Ashida, N. Fujimura
Key Engineering Materials, 445(2010)144-147
http://www.scientific.net/KEM.445.144

● Local piezoelectric and conduction properties of BiFeO₃ epitaxial thin films
K. Ujimoto, T. Yoshimura, N. Fujimura
Japanese Journal of Applied Physics, 49 (2010) 09MB02
http://jjap.jsap.jp/link?JJAP/49/09MB02/

● ZnO Thin Films Prepared by Electrochemical Deposition Method at Constant Current Density
Atsushi Ashida and Norifumi Fujimura
Journal of the Society of Materials Science, Japan,Vol.59,No.9,pp681-685(2010)
https://www.jstage.jst.go.jp/article/jsms/59/9/59_9_681/_pdf

● Analysis of carrier modulation in channel of　ferroelectric-gate transistors having polar semiconductor
T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura
Thin Solid Films, 518(2010)3026-3029
http://dx.doi.org/10.1016/j.tsf.2009.09.185

● Direct piezoelectric properties of Mn-doped ZnO epitaxial films
T. Yoshimura, H. Sakiyama, T. Oshio, A. Ashida, N. Fujimura
Japanese Journal of Applied Physics, 49 (2010)021501
http://jjap.jsap.jp/link?JJAP/49/021501/

Academic Book

●State-of-the-Art Research and Prospective of Zinc Oxide
Norifumi Fujimura(Participation writing)
シーエムシー出版，第３章（2010）
http://www.cmcbooks.co.jp/products/detail.php?product_id=3686

6th international symposium on transparent oxide thin films for electronics and optics (TOEO-6)
-Apl.2009, Tokyo-
■Control of cathodic potential for deposition of ZnO by constant current electrochemical method
N. Nouzu
■Fabrication and magneto-transport properties of Zn0.88Mn0.12O/ZnO　　K. Masuko
■Surface morphology of homoepitaxial ZnO thin films grown on Zn-polar ZnO substrates
T. Nakamura

● Electron transport properties of Zn_0.88Mn_0.12O/ZnO modulation-doped heterostructures
K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Journal of Vacuum Science & Technology B, 27(2009)1760-1764
http://dx.doi.org/+10.1116/1.3093916

● Contribution of s-d exchange interaction to magnetoresistance of ZnO-based heterostructures with a magnetic barrier
K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Physical Review B, 80(2009) 125313
http://prb.aps.org/abstract/PRB/v80/i12/e125313

● Polarization switching behavior of YMnO₃ thin film at around magnetic phase transition temperature
K. Maeda, T. Yoshimura, N. Fujimura
Japanese Journal of Applied Physics, 48(2009) 09KB05
http://jjap.jsap.jp/link?JJAP/48/09KB05/

● Effects of Mg doping on structural, optical, and electrical properties of CuScO₂(0001) epitaxial films
Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura
Vacuum Surface Engineering, Surface Instrumentation & Vacuum Technology, 84(2009) 618-621
http://dx.doi.org/10.1016/j.vacuum.2009.06.023

● Magnetic properties of uniformly Ce-doped Si thin films with n-type conduction
T. Terao, K. Fujii, D. Shindo, T. Yoshimura, N.Fujimura
Japanese Journal of Applied Physics, 48 (2009) 033003
http://jjap.jsap.jp/link?JJAP/48/033003/

● Amorphous carbon film deposition for hydrogen barrier in FeRAM integration by radio frequency plasma chemical vapor deposition
T. Saito, K. Izumi, Y. Hirota, N. Okamoro, K. Kondo, T. Yoshimura, N. Fujimura
Electrochemical Society Transactions, 25(2009) 693-698
http://ecst.ecsdl.org/content/25/8/693

● Optical and electrical properties of CuScO₂ epitaxial films prepared by combining two-step deposition and post-annealing techniques
Y. Kakehi, K. Satoh, T. Yotsuya, K. Masuko, T. Yoshimura, A. Ashida, N. Fujimura
Journal of Crystal Growth, 311(2009)  1117-1122
http://dx.doi.org/10.1016/j.jcrysgro.2008.11.060

● Spin-phonon coupling in multiferroic YbMnO₃ studied by Raman scattering
H. Fukumura, N. Hasuike, H. Harima , K. Kisoda , K. Fukae , T. Yoshimura , N. Fujimura
JOURNAL OF PHYSICS-CONDENSED MATTER, 21 (2009) 064218
http://iopscience.iop.org/0953-8984/21/6/064218/

●Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method
Takeyasu Saito, Kaname Izumi, Yuichiro Hirota, Naoki Okamoto, Kazuo Kondo,Takeshi Yoshimura and Norifumi Fujimura
216th ECS Transactions, 25 (2009)693-698
http://ecst.ecsdl.org/content/25/8/693.abstract

Commentary, review

●ZnMnO/ZnOヘテロ構造の作製とその磁気輸送特性
(Fabrication and magneto-transport properties of ZnMnO/ZnO heterostructures)
Keiichiro Masuko,Atsushi Ashida,Takeshi Yoshimura and Norifumi Fujimura
多元系機能材料研究会 平成２１年度活動報告書.

Material Research Soc. Fall Meeting
-USA Boston, December, 2008-
■ Spin Dependent Transport in ZnMnO/ZnO Hetero-structure(invited)　N. Fujimura

5th International Workshop on ZnO and Related Materials
-Michigan, USA, September, 2008-
■ Electron Transport Properties of ZnMnO/ZnO Modulation-doped Heterostructures.　　K. Masuko

Global Congress on Microwave Energy Application 2008
-Sep.2008, Otsu,Japan-
■ Raman Spectroscopy of ZnO Crystals under Microwave Irradiation.A. Ashida

The 7th Korea-Japan Conference Ferroelectricity (KJC-07)
-Jeju, Korea, August, 2008-
■ Epitaxial Growth of Charge Ordering Type Ferroelectrics YbFe₂O₄. K. Hirose
■ Ferroelectric and Magnetic Properties of (0001)YbMnO₃ Epitaxial Thin Films. T. Yoshimura
■ Polarization Switching Characteristics of YMnO₃ Thin Film at around Magnetic Phase Transition Temperature. T. Yoshimura

2nd International Symposium on the Manipulation of Advanced Smart Materials
-May,2008, Hyogo,Japan-
■ ZnO Thin Films Grown by Electrochemical Deposition Method with Constant Current.　　A.Ashida

● Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor
T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, and N. Fujimura
Japanese Journal of Applied Physics, 47 (2008) 8874-8879
http://jjap.jsap.jp/link?JJAP/47/8874/

● Effects of Oxygen Annealing on Dielectric Properties of LuFeCuO₄
Y. Matsuo, M. Suzuki, Y. Noguchi, T. Yoshimura, N. Fujimura, K. Yoshi, N. Ikeda, S. Mori
Japanese Journal of Applied Physics, 47(2008) 8464-8467
http://jjap.jsap.jp/link?JJAP/47/8464/

● Electrical and optical properties of excess oxygen intercalated CuScO₂(0001) epitaxial films prepared by oxygen radical annealing
Y. Kakehi, K. Satoh, T. Yotsuya, A. Ashida, T. Yoshimura and N. Fujimura
Thin Solid Films, 516(2008) 5785-5789
http://www.sciencedirect.com/science/article/pii/S0040609007017129

● Dielectric properties of ferroelectric/DMS heterointerface using YMnO₃ and Ce doped Si
D. Shindo, T. Yoshimura and N. Fujimura
Applied Surface Science, 254(2008) 6218-6221
http://www.sciencedirect.com/science/article/pii/S0169433208004455

● Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films
S. Sakamoto, T. Oshio, A. Ashida, T. Yoshimura and N. Fujimura
Applied Surface Science, 254(2008) 6248-6251
http://www.sciencedirect.com/science/article/pii/S0169433208004108

● Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Applied Physics, 103 (2008) 093717
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4947858&abstractAccess=no&userType=inst

● Magnetic and Dielectric Properties of Yb(Mn_1-xAl_x)O₃ Thin Films
K. Fukae, T. Takahashi, T. Yoshimura and N. Fujimura
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 55(2008)  1056-1060
http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4524984

● Spin-dependent transport in a ZnMnO/ZnO heterostructure
K. Masuko, A. Ashida, T. Yoshimura and
N. Fujimura
Journal of Applied Physics, 103 (2008)07D124
http://scitation.aip.org/content/aip/journal/jap/103/7/10.1063/1.2837882

● Effects of Spontaneous and Piezoelectric Polarizations on Carrier Confinement at the Zn_0.88Mn_0.12O/ZnO Interface
K. Masuko, H. Sakiyama, A. Ashida, T. Yoshimura and N. Fujimura
Physica Status Solidi (c) 5(2008)  3107-3109
http://onlinelibrary.wiley.com/doi/10.1002/pssc.200779222/abstract

● Electro-Optic Property of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Physica Status Solidi (c) 5 (2008) 3110-3112
http://onlinelibrary.wiley.com/doi/10.1002/pssc.200779246/abstract

● Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO (0001) single-crystal substrates
K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Applied Physics, 103(2008) 043714
http://aip.scitation.org/doi/10.1063/1.2841056

● ZnO Thin Films Epitaxially Grown by Electrochemical Deposition Method with Constant Current
A. Ashida, A. Fujita, Y. Shim, K. Wakita and A. Nakahira
Thin Solid Films, 517(2008) 1461-1464
http://www.sciencedirect.com/science/article/pii/S0040609008010687

● ZnO Thin Films Prepared by the Electrochemical Method with Various Electrolytic Current
A. Fujita, A. Ashida and A. Nakahira
Transactions of the Materials Research Society of Japan, 33(2008) 1301-1304

● Raman Spectroscopy of ZnO Crystals under Microwave Irradiation
Atsushi Ashida, Tetsuro Tsujino, Yonggu Shim and Kazuki Wakita
Proceedings of Global Congress on Microwave Energy Application, 747-750 (2008)

Material Research Soc. Fall Meeting
–Boston ,USA, December, 2007-
■Multiferroic Behaviors of Ferroelectric Ferromagnet, YbMnO₃ Epitaxial Films. (Invited)
N. Fujimura

5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
-Nov.2007, Tokyo-
■ Dielectric properties of ferroelectric/DMS heterointerface using YMnO₃ and Ce doped Si
Daisuke Shindo
■ Effect of Electrical Degenerated Layer on the Carrier Transport Property of ZnO Thin Films on YSZ substrate　　Shinya Sakamoto

52nd Conference on Magnetism and Magnetic Materials (MMM 2007)
-Tampa, Florida November , 2007-
■ Spin-dependent Transport in ZnMnO/ZnO Heterostructure　　Keiichiro Masuko

The 34th International Symposium on Compound Semiconductors (ISCS 2007)
-Oct.2007, Kyoto-
■ Magnetic and Magneto-transport Properties of ZnMnO/ZnO Heterostructure　　　Keiichiro Masuko
■ Electro-Optic Properties of ZnO:Mn Epitaxial Thin Film　　　Takeshi Oshio

14th International Workshop on Oxide Electronics
-Jeju island, Korea, October, 2007-
■ Controlled polarization type FET with a Ferroelectric gate and a polar semiconductor
Norifumi Fujimura

Handai Nanoscience and Nanotechnology International Symposium
-Sep.2007,  Osaka-
■ Effect of spin polarization on the electron transport in modulation-doped ZnMnO/ZnO heterostructure　　Keiichiro Masuko
■ Magnetic Properties of Si:Ce Thin Films with High Ce Concentration　　Takemi Terao

The 16th International Symposium on the Application of Ferroelectrics 2007 (ISAF2007)
-May,2007, Nara,Japan-
■ Magnetic and Dielectric Properties of Yb(Mn1-xAlx)O₃ Thin Films　　Keisuke Fukae
■ Influence of Antiferromagnetic Ordering on Ferroelectric Polarization Switching of YMnO₃ Epitaxial Thin Films　　Kazuhiro Maeda

10th joint MMM/Intermag conference
-Jan. 2007, Baltimore, USA-
■ Effects of the Ce Concentration and the Carrier Concentration on the Magnetic Properties of Low Temperature grown Si:Ce Thin Films 　　Takemi Terao
■ Magnetic Frustration Behavior of Ferroelectric Ferromagnet, YbMnO₃ Epitaxial films
Norifumi Fujimura

● Low temperature growth of Si:Ce thin films with high crystallinity and uniform distribution of Ce grown by solid-source molecular beam epitaxy
T. Terao, Y. Nishimura, D. Shindo and N. Fujimura
Journal of Crystal Growth, 307(2007) 30-34
http://www.sciencedirect.com/science/article/pii/S0022024807005714

● Raman scattering studies on multiferroic YMnO₃
H. Fukumura, S. Matsui, H. Harima, K. Kisoda, T. Takahashi, T. Yoshimura and N. Fujimura
Journal of Physics -Condensed Matter, 19 ,36(2007) 365239
http://iopscience.iop.org/0953-8984/19/36/365239

● Influence of Antiferromagnetic Ordering on Ferroelectric Polarization Switching of YMnO₃ Epitaxial Thin Films
K. Maeda, T. Yoshimura and N. Fujimura
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 54, 12(2007) 2641-2644
http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4430056

● Effect of Bi substitution on the Magnetic and Dielectric Properties of Epitaxially-grown Fe_0.3Zr_0.7O_3-δ Thin Films on SrTiO₃ substrates
T. Matsui, S. Daido, N. Fujimura, T. Yoshimura, H. Tsuda and K. Morii
Journal of Physics and Chemistry of Solids, 68,8,(2007)  1515-1521
http://www.sciencedirect.com/science/article/pii/S0022369707001515

● Magnetic Frustration Behavior of Ferroelectric Ferromagnet YbMnO₃ Epitaxial Films
N. Fujimura, T. Takahashi, T. Yoshimura and A. Ashida
Journal of Applied Physics, 101 (2007) 09M107
http://scitation.aip.org/content/aip/journal/jap/101/9/10.1063/1.2713214

● Multiferroic Behaviors of YMnO₃ and YbMnO₃ Epitaxial Films (INVITED PAPER)
N. Fujimura, N. Shigemitsu, T. Takahashi, A. Ashida and T. Yoshimura
Philosophical Magazine Letters, 87, 3-4(2007)  193-201
http://www.tandfonline.com/doi/abs/10.1080/09500830701250322

● The Comparison of the Growth Models of Silicon Nitride Ultra-Thin Films Fabricated Using Atmospheric Pressure Plasma and Radio Frequency Plasma
M. Nakae, R. Hayakawa, T.Yoshimura, A. Ashida, N. Fujimura and T. Uehara
Journal of Applied Physics, 101(2007)  023513
http://scitation.aip.org/content/aip/journal/jap/101/2/10.1063/1.2424501

● Preparation and the magnetic property of ZnMnO thin films on (000) ZnO Single Crystal Substrate
K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Magnetism and Magnetic Materials, 310(2007) e711-e713
http://www.sciencedirect.com/science/article/pii/S0304885306022530

● Magnetic Properties of Low Temperature Grown Si:Ce Thin Films on (001) Si Substrate
T. Terao, Y. Nishimura, D. Shindo, A. Ashida and N. Fujimura
Journal of Magnetism and Magnetic Materials, 310(2007)e726-e728
http://www.sciencedirect.com/science/article/pii/S0304885306020634

● Magnetic and Dielectric Properties of Yb(Mn_1-xAl_x)O₃ Thin Films
K. Fukae, T. Takahashi, T. Yoshimura and N. Fujimura
Proceedings of the 2007 16th IEEE International Symposium on Applications of Ferroelectrics, 437 (2007)
http://www.sciencedirect.com/science/article/pii/S0304885306020634

● Influence of Antiferromagnetic Ordering on Ferroelectric Polarization Switching of YMnO₃ Epitaxial Thin Films
K. Maeda, T. Yoshimura and N. Fujimura
Proceedings of the 2007 16th IEEE International Symposium on Applications of Ferroelectrics, 441(2007) http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4430056

● Conduction Characteristics of Charge Ordering Type Ferroelectrics,YFe₂O₄
K.Imamura, Y.Horibe, T.Yoshimura, N.Fujimura, S.Mori and N.Ikeda
Mater. Res. Soc. Symp. Proc. 966(2007) T07-27
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8160902

● Spin-coupled phonons in multiferroic YbMnO₃ epitaxial films by Raman scattering
H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Takahashi, T.Yoshimura and N. Fujimura
PHONONS 2007 Journal of Physics: Conference Series 92 (2007) 012126
http://iopscience.iop.org/1742-6596/92/1/012126/

● Magnetic and Ferroelectric Properties of YMnO₃ Epitaxial Thin Films
K. Maeda, T. Yoshimura and N. Fujimura
Materials Research Society Symposium Proceedings , 966E(2007) 0966-T03-01
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8160836&fulltextType=RA&fileId=S1946427400055020

● The Comparison of the Growth Models of Silicon Nitride Ultra-Thin Films Fabricated Using Atmospheric Pressure Plasma and Radio Frequency Plasma
M. Nakae, R. Hayakawa, T.Yoshimura, A. Ashida, T. Uehara and N. Fujimura
Journal of Applied Physics 101 (2007) 023513
http://scitation.aip.org/content/aip/journal/jap/101/2/10.1063/1.2424501

● Magnetic Frustration Behavior of Ferroelectric Ferromagnet YbMnO₃ Epitaxial Films
N. Fujimura, T. Takahashi T. Yoshimura and A. Ashida
Journal of Applied Physics 101 (2007) 09M107
http://scitation.aip.org/content/aip/journal/jap/101/9/10.1063/1.2713214

● Preparation and the magnetic property of ZnMnO thin films on (000-1) ZnO single crystal substrate
K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Magnetism and Magnetic Materials 310(2007)e711-e713
http://www.sciencedirect.com/science/article/pii/S0304885306022530