Journal Papers

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Journal Papers 2001

●Solid State Growth and Its Application to Ternary Compounds
A.Ashida,N. Yamamoto,T. Ito
Japanese Research Review for Pioneering: Ternary and Multinary Compounds
in the 21st Century”, (The Institute of Pure and Applied Physics, Tokyo, 57-61(2001).

● Magnetic and magneto-transport properties of ZnO:Ni films
T. Wakano, N. Fujimura, N. Abe, Y. Morinaga, A. Ashida, T. Ito
Physica E, 10, 1-3 (2001) 260-264
http://www.sciencedirect.com/science/article/pii/S1386947701000959

● Magnetic properties of Er and Er,O-doped GaAs grown by organometallic vapor phase epitaxy
Y. Morinaga, T. Edahiro, N. Fujimura, T. Ito, T. Koide, Y. Fujiwara, Y. Takeda
Physica E, 10, 1-3(2001)391-394
http://www.sciencedirect.com/science/article/pii/S1386947701001230

● Annealing behavior of electrical properties in plasma-exposed Ti/p-Si interfaces
T. Yamaguchi, H. Kato, N. Fujimura, T. Ito
Thin Solid Films, 396, 1-2(2001) 119-125
http://www.sciencedirect.com/science/article/pii/S0040609001012457

● Ferroelectricity in Li-doped ZnO:X thin films and their application for the optical switching devices
T. Nagata, T. Shimura, Y. Nakano, A. Ashida, N. Fujimura, T. Ito
Jpn. J. Appl. Phys. 40, 9B(2001) 5615-5618
http://jjap.jsap.jp/link?JJAP/40/5615/

● Si:Ce系希薄磁性半導体薄膜の新規な物性
藤村紀文, 横田壮司, 伊藤 太一郎
固体物理 36巻9号(2001) 61-68

● Crystal growth and dielectric properties of BaZrO3 thin films on Si substrates
N. Fujimura, Y. Kitano, T. Matsui, K. Morii, T. Ito
Proc. of the 8th International Workshop on Oxide Electronics (2001)

● Magnetic and Magneto-Transport Properties of Diluted Magnetic Semiconductor, ZnO:Ni
T. Edahiro, N. Fujimura, A.Ashida, T. Ito
Proc. of the 8th International Workshop on Oxide Electronics (2001)

●Detailed structural analysis of Ce doped Si thin films
T.Yokota,N.Fujimura,Y.Morinaga,T.Ito
Proceedings of the First International Conference on the Physics and Applications of Spin-Related Phenomena in Semiconductors
Physica E: Low-dimensional Systems and Nanostructures10,1–3(May 2001)237–241
http://www.sciencedirect.com/science/article/pii/S138694770100090X

●Magnetic properties of Er andEr, O-dopedGaAs grown by organometallic vapor phase epitaxy
Y. Morinagaa, T. Edahiroa, N. Fujimuraa, T. Itoa, T. Koideb, Y. Fujiwarab, Y. Takedab
Physica E 10 ,1-3(2001)391–394
http://ac.els-cdn.com/S1386947701001230/1-s2.0-S1386947701001230-main.pdf?_tid=4119617e-620b-11e3-8ad3-00000aacb35f&acdnat=1386728802_c91c08e2deed2636c63f493ef997470b

●Magnetic and magneto-transport properties of ZnO :Ni &lms
T. Wakano, N. Fujimura , Y. Morinaga, N. Abe, A. Ashida, T. Ito
Physica E 10 (2001) 260–264
http://ac.els-cdn.com/S1386947701000959/1-s2.0-S1386947701000959-main.pdf?_tid=832bf61c-620b-11e3-b65e-00000aab0f27&acdnat=1386728913_bab21244767145c6be3c4579991e1f42

●Improvement of Retention Property of YMnO3/Y2O3/Si MFIS Capacitor
Norifumi Fujimura, Daisuke Ito, kousuke Kakkuno, Taichiro Ito
MRS symposium procssdings 655.cc3.11(2001)1-6
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8226106&fulltextType=RA&fileId=S1946427400623849

Journal Papers 2000

● Effect of plasma-induced damage on interfacial reactions of titanium thin films on silicon surface
T. Yamaguchi, N. Fujimura, A. Hama, H. Niko and T. Ito
Applied Physics Letters, 76, 17(2000) 2358-2360
http://scitation.aip.org/content/aip/journal/apl/76/17/10.1063/1.126345

● Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C-V measurement; ferroelectricity in YMnO3/Y2O3/Si structure
T. Yoshimura, N. Fujimura and T. Ito
Journal of Applied Physics, 87, 7(2000)3444-3449
http://scitation.aip.org/content/aip/journal/jap/87/7/10.1063/1.372364

● Improvement Y2O3/Si interface for FeRAM application
D. Ito, T. Yoshimura, N. Fujimura and T. Ito
Applied Surface Science, 159-160(2000) 138-142
http://www.sciencedirect.com/science/article/pii/S0169433200000854

● Influence of reactive ion etching damage on the schottky barrier hight of Ti/p-Si interface.
N. Fujimura, T. Yamaguchi, H.Kato, and T. Ito
Applied Surface Science; 159-160(2000)186-190
http://www.sciencedirect.com/science/article/pii/S0169433200000696

● 廃棄物処理マルチスメルターのシミュレーション
張 興和、高橋 礼二郎、八木 順一郎、大西 忠一、久米 正一
高温学会誌, 26(2000) 306-315

● Initial stage of thin film growth of pulsed laser deposited YMnO3
Daisuke Ito, Norifumi Fujimura, Taichiro Ito
Jpn. J. Appl. Phys., 39(2000) 5525
http://jjap.jsap.jp/link?JJAP/39/5525/

● Effects of excess Si, excess Mg and Fe on precipitation in 6061 aluminum alloys during recycling process.
A. Yamamoto, H.Tsubakino, A. Suehiro, A. Watanabe, T. Ohnishi and M. Kanno
Proc. of 7th Intern. Conf. on Aluminum Alloys (2000) 1-6
https://www.researchgate.net/publication/250338493

● Small-sized blust furnace system for waste as resources.
K. Uehara, K. Miyatake, T. Ohnishi, S. Kume and H. Harada
Proc. of Intern. Conf. on Steel and Society (2000)  1-6

● Precipitation in 6061 aluminum alloys containing intermetallic inclusion.
A. Yamamoto, H. Tsubakino, A. Suehiro, A. Watanabe, A. Noguchi, T. Ohnishi and M. Kanno
Proc. on 2nd Intern. Sym. on Designibg, Processing and Properties of Advanced Engineering Materials (2000)  1-8

● Evaluation of ferroelectricity in MFIS type Capacitor using pulsed C-V measurements
N. Fujimura, T. Yoshimura and T. Ito
Materials Research Soc. Symposium Proceedings, 596(2000)407-412
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8053923&fulltextType=RA&fileId=S1946427400203710

●Origin of Leakage Current of YMnO3 Thin Films Prepared by the Sol-Gel Method
Hiroya Kitahara, Kiyoharu Tadanaga, Tsutomu Minami, Norifumi Fujimura, Taichiro Ito
Materials Research Soc. Symposium Proceedings, 596(2000)481-486
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8054098&fulltextType=RA&fileId=S1946427400203801

● Si:Ce薄膜における新規な磁気輸送現象
藤村 紀文、横田 壮司、森永 泰規、伊藤 太一郎
「スピン制御による半導体超構造の新展開」研究成果論文集(2000) 34-37

● Y2O3/Si界面の電気的評価とその強誘電体メモリーへの応用
藤村 紀文、伊藤 大輔、伊藤 太一郎
極薄シリコン酸化膜の形成・評価・信頼性シンポジウム講演論文集(2000)105-108

●Preparation and Ferroelectric Properties of YMnO3 Thin Films with c-Axis Preferred Orientation by the Sol-Gel Method
H. Kitahata, K.Tadanaga, T.Minami, N.Fujimura
Journal of Sol-Gel Science and Technology 19(2000) 589–593
http://link.springer.com/article/10.1023%2FA%3A1008761327562

●Effect of Carrier Concentration on the Magnetic Behavior of Ferroelectric YMnO3 Ceramics and Thin Films
N.Fujimura ,S.Yamamori, A.Nakamoto, D.Ito, T.Yokota, T.Ito
Proceedings of the 2000 12th IEEE International Symposium on(Vol.2)(2000)
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=942398&abstractAccess=no&userType=inst

●Magnetic and magneto-transport properties of Ce doped Si thin films
N.Fujimura, T.Yokota, Y.Morinaga, T.Ito
Proceedings 25th International Conference of Physics Semicond.Osaka2000(2000)1467-1488

Journal Papers 1999

● Magnetic properties of dilutely Ce-doped Si
Y. Morinaga, N. Fujimura, T. Yokota, T. Ito Symposium
Proc. of Materials Research Society Spring Meeting (1999) 183

● Variety of spin structure in Si:Ce
N. Fujimura, Y. Morinaga, T. Yokota, T. Ito Symposium
Proc. of Materials Research Society Spring Meeting Abstracts (1999) 182

● YMnO3 and YbMnO3 thin films for FET type FeRAM application
N. Fujimura, T. Yoshimura, D. Ito, T. Ito
Symposium Proc. of Materials Research Society, 574 (1999) 317-322
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8043773

● Fabrication and dielectric properties of ZnO:X thin films by pulsed laser deposition method.
T. Shimura, T. Wakano, N. Fujimura, T. Ito
Technical Report of the Institute of Electronics Information and Communication Engineering ED98-250 SDM98-203(1999)27-32
http://ci.nii.ac.jp/els/110003200710.pdf?id=ART0003626673&type=pdf&lang=jp&host=cinii&order_no=&ppv_type=0&lang_sw=&no=1384236025&cp=

● Electric and magnetic properties of Ce doped Si
T.Yokota, Y. Morinaga, N. Fujimura ,T. Ito
Symposium Proc. of Materials Research Society Spring Meeting Abstracts (1999)183

● Exotic doping for ZnO thin films: possibility of monolithic optical intergrated circuit.
N. Fujimura, T. Shimura, T. Wakano, A. Ashida, T. Ito
Symposium Proc. of Materials Research Society 574(1999) 317-322
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8043961

● Detailed C-V analysis for YbMnO3/Y2O3/Si structure
T. Yoshimura, N. Fujimura, D. Ito, T. Ito
Symposia proc. of Materials Research Society 574(1999) 359-364
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8044090

● Si:Ce薄膜の磁気輸送異常
藤村紀文, 横田壮司, 森永泰規, 伊藤 太一郎
スピン制御による半導体超構造の新展開 研究報告会 論文集 13-14 (1999)

● Analysis of C-V behavior for RMnO3 (R: rare earth element)/Y2O3/Si
T. Yoshimura, N. Fujimura, T. Ito
Technical Report of the Institute of Electronics Information and Communication Engineering ED98-250 SDM98-203(1999) 71-76

● Anomalous Magneto-transport  Behaviors of Si:Ce thin films.
N. Fujimura, T. Yokota, Y.Morinaga ,T. Ito
Proc. of the 5th Symposium on Spin Controlled Semiconductor Nanostructurs 125-127 (1999)

● Ferroelectricity of YMnO3 thin films prepared via solution
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito
Appl. Phys. Lett. 75, 5(1999) 719-721
http://scitation.aip.org/content/aip/journal/apl/75/5/10.1063/1.124493

● Lowering the crystallization temperature of YMnO3 thin films by the sol-gel method using an yttrium alkoxide
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito
Jpn. J. Appl. Phys. 38, 9B(1999)  5448-5451
http://jjap.jsap.jp/link?JJAP/38/5448/

● 太陽電池用CuInSe2薄膜の機能傾斜化
芦田 淳、長田 貴弘、熊谷 倫一、伊藤 太一郎
傾斜機能材料, 13(1999) 155-158

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