Journal Papers

category

Journal Papers 2011

●ZnO crystal growth on microelectrode by electrochemical deposition method
Y.Kondo, A. Ashida, N. Nouzu, N. Fujimura
IOP Conf. Series: Materials Science and Engineering, 18, 092043 1-4 (2011).
https://www.researchgate.net/publication/253179147

●The Difference of Surface Treatment Method for ZnO Single Crystals and the Epitaxial Growth Process
Occurred by the Difference in the Surface Polarity
Tatsuru Nakamura,Norifumi Fujimura
Journal of the Society of Materials Science, Japan,Vol.60,No.11,pp983-987(2011)
http://doi.org/10.2472/jsms.60.983

●Fine-structured TiO2 ceramic patterns on the ceramic surface fabricated by replication
H D Kim, T Nakayama, B J Hong, K Imaki, T Yoshimura, T Suzuki, H Suematsu, S W Lee, Z Fu and K Niihara
MaterialsScienceandEngineering 20 (2011) 012003
http://iopscience.iop.org/1757-899X/20/1/012003/pdf/1757-899X_20_1_012003.pdf

●Characterization of Direct Piezoelectric Effect in 31 and 33 modes for Application to Vibration Energy Harvester
H. Miyabuchi, T. Yoshimura, S. Murakami and N. Fujimura
Japanese Journal of Applied Physics, 50(2011)09ND17
http://jjap.jsap.jp/link?JJAP/50/09ND17/

●Effect of Ferroelectric Polarization Domain on Electronic Transport Properties of Ferroelectric/ZnO Heterostructure
H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura
Japanese Journal of Applied Physics, 50 (2011) 09NA06
http://jjap.jsap.jp/link?JJAP/50/09NA06/

●Ce-Induced Reconstruction of Si(001) Surface Structures
Daisuke Shindo, Shusaku Sakurai, and Norifumi Fujimura
Japanese Journal of Applied Physics 50 (2011) 065701
http://jjap.jsap.jp/link?JJAP/50/065701/

●Direct Piezoelectricity of PZT Films and Application to Vibration Energy Harvesting
H. Miyabuchi, T. Yoshimura, S. Murakami and N. Fujimura
Journal of the Korean Physical Society, 59(2011) 2524-2527
https://www.researchgate.net/publication/272727613

●Effect of Lattice Misfit Strain on Crystal System and Ferroelectric Property of BiFeO3 Epitaxial Thin Films
K. Ujimoto, T. Yoshimura, A. Ashida and N. Fujimura
Materials Science and Engineering, 18 (2011)092064
doi:10.1088/1757-899X/18/9/092064

●Characterization of Direct Piezoelectric Properties for Vibration Energy Harvesting
T. Yoshimura, H. Miyabuchi, S. Murakami, A. Ashida and N. Fujimura
Materials Science and Engineering, 18 (2011) 092026
doi:10.1088/1757-899X/18/9/092026

●Characterization of Field Effect Transistor with TiO2 Nanotube Channel Fabricated by Dielecrophoresis
M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama N. Fujimura
Materials Science and Engineering, 18 (2011) 082019
doi:10.1088/1757-899X/18/8/082019

●Impedance analysis of controlled-polarization-type ferroelectric-gate TFT using RC lumped constant circuit
T. Fukushima, K. Maeda, T. Yoshimura, A. Ashida, and N. Fujimura
Japanese Journal of Applied Physics, 50 (2011)04DD16
http://jjap.jsap.jp/link?JJAP/50/04DD16/

●Initial Growth Process in Electrochemical Deposition of ZnO
Atsushi Ashida, Naoya Nouzu, and Norifumi Fujimura
Japanese Journal of Applied Physics 50 (2011) 05FB12
http://jjap.jsap.jp/link?JJAP/50/05FB12/

●Electronic Transport Property of a YbMnO3/ZnO Heterostructure
H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura
Journal of the Korean Physical Society 58(2011)  792-796
http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=947E2F03-4C2C-4335-B926-6F4410D4E884

●Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films
T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Journal of Crystal Growth, 318(2011) 516-518
http://dx.doi.org/10.1016/j.jcrysgro.2010.10.044

●Fabrication of robust PbLa(Zr,Ti)O3 capacitor structures using insulating oxide encapsulation layers for FeRAM integration.
T. Saito, T.Tsuji, K. Izumi, Y. Hirota, N. Okamoto, K.Kondo, T. Yoshimura, N. Fujimura, A. Kitajima A. Oshima
Electronics Letters, 47 (2011) 486
http://dx.doi.org/10.1049/el.2011.0461

●Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma
Ryoma Hayakawa, Masashi Yoshida, Kouta Ide, Yoshiyuki Yamashita,Hideki Yoshikawa, Keisuke Kobayashi, Shunsuke Kunugi, Tsuyoshi Uehara,and Norifumi Fujimura
J.Appl.Phys. 110(2011)064103
http://aip.scitation.org/doi/full/10.1063/1.3638133

Journal Papers 2010

●Fabrication of the finestructured alumina porous materials with nanoimprint method
Kim, H.D, T.Nakayama, J.Yoshimura, K.Imaki, T.Yoshimura,H. Suematsu, T.Suzuki, K.Niihara
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan,117(April 2009)534-536
https://www.jstage.jst.go.jp/article/jcersj2/117/1364/117_1364_534/_pdf

●Fine-structured patterns of porous alumina material fabricated by a replication method
Hong Dae Kim, Tadachika Nakayama, Byung Jin Hong, Kazuyoshi Imaki, Takeshi Yoshimura, Tsuneo Suzuki, Hisayuki Suematsu, Koichi Niihara
Journal of the European Ceramic Society,30( Oct 2010) 2735–2739
http://ac.els-cdn.com/S0955221910002293/1-s2.0-S0955221910002293-main.pdf?_tid=8d15ccc8-ce96-11e3-add0-00000aacb361&acdnat=1398663360_d53cb23b161bebba12b9d05326948be1

●Fine-structured ZnO patterns with sub-micrometer on the ceramic surface fabricated by a replication method
Hong Dae KIM, Tadachika NAKAYAMA, Byung Jin HONG, Kazuyoshi IMAKI, Takeshi YOSHIMURA, Tsuneo SUZUKI, Hisayuki SUEMATSU,  Koichi NIIHARA
Journal of the Ceramic Society of Japan,118(Dec 2010)1384,P 1140-1143
https://www.jstage.jst.go.jp/article/jcersj2/118/1384/118_1384_1140/_pdf

●Effects of Mg doping on structural, optical, and electrical properties of CuScO2(0001) epitaxial films
Yoshiharu Kakehi , Kazuo Satoh , Takeshi Yoshimura , Atsushi Ashida , Norifumi Fujimura
Vacuum 84.5.10 (2010) 618–621
http://www.sciencedirect.com/science/article/pii/S0042207X09003509

● Control of cathodic potential for deposition of ZnO by constant-current electrochemical method
N. Nouzu, A. Ashida, T. Yoshimura, N. Fujimura
Thin Solid Films 518 (2010) 2957-2960
http://dx.doi.org/10.1016/j.tsf.2009.09.194

● Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition
T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Thin Solid Films 518 (2010) 2971-2974
http://dx.doi.org/10.1016/j.tsf.2009.09.184

● Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films
Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura
Thin Solid Films 518 (2010) 3097-3100
http://dx.doi.org/10.1016/j.tsf.2009.07.204

● Direct Piezoelectric Properties of Mn-Doped ZnO Epitaxial Films
T. Yoshimura, H. Sakiyama, T. Oshio, A. Ashida, N. Fujimura
Jpn. J. Appl. Phys, 49 (2010) 021501
http://jjap.jsap.jp/link?JJAP/49/021501/

● The effects of aluminum doping for the magnetotransport property of Si:Ce thin films
D. Shindo, K. Fujii, T. Terao, S. Sakurai, S. Mori, K. Kurushima, N. Fujimura
Journal of Applied Physics, 107 (2010)  09C308
http://dx.doi.org/10.1063/1.3352981

● Dielectric behavior of YMnO3 epitaxial thin film at around magnetic phase transition temperature
K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura
Advances in Science and Technology, 67(2010)176-181
http://www.scientific.net/AST.67.176

● Fabrication and magneto-transport properties of Zn0.88-xMgxMn0.12O/ZnO heterostructures grown on ZnO single-crystal substrates
K. Masuko, T. Nakamura, A. Ashida, T. Yoshimura, N. Fujimura
Advances in Science and Technology, 75 (2010) 1-8
http://www.scientific.net/AST.75.1

● Ferroelectric properties of magnetoferroelectric YMnO3 epitaxial films at around the neel temperature
T. Yoshimura, K. Maeda, A. Ashida, N. Fujimura
Key Engineering Materials, 445(2010)144-147
http://www.scientific.net/KEM.445.144

● Local piezoelectric and conduction properties of BiFeO3 epitaxial thin films
K. Ujimoto, T. Yoshimura, N. Fujimura
Japanese Journal of Applied Physics, 49 (2010) 09MB02
http://jjap.jsap.jp/link?JJAP/49/09MB02/

● ZnO Thin Films Prepared by Electrochemical Deposition Method at Constant Current Density
Atsushi Ashida and Norifumi Fujimura
Journal of the Society of Materials Science, Japan,Vol.59,No.9,pp681-685(2010)
https://www.jstage.jst.go.jp/article/jsms/59/9/59_9_681/_pdf

● Analysis of carrier modulation in channel of ferroelectric-gate transistors having polar semiconductor
T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura
Thin Solid Films, 518(2010)3026-3029
http://dx.doi.org/10.1016/j.tsf.2009.09.185

● Direct piezoelectric properties of Mn-doped ZnO epitaxial films
T. Yoshimura, H. Sakiyama, T. Oshio, A. Ashida, N. Fujimura
Japanese Journal of Applied Physics, 49 (2010)021501
http://jjap.jsap.jp/link?JJAP/49/021501/

 

Academic Book

●State-of-the-Art Research and Prospective of Zinc Oxide
Norifumi Fujimura(Participation writing)
シーエムシー出版,第3章(2010)
http://www.cmcbooks.co.jp/products/detail.php?product_id=3686

Journal Papers 2009

● Electron transport properties of Zn0.88Mn0.12O/ZnO modulation-doped heterostructures
K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Journal of Vacuum Science & Technology B, 27(2009)1760-1764
http://dx.doi.org/+10.1116/1.3093916

● Contribution of s-d exchange interaction to magnetoresistance of ZnO-based heterostructures with a magnetic barrier
K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Physical Review B, 80(2009) 125313
http://prb.aps.org/abstract/PRB/v80/i12/e125313

● Polarization switching behavior of YMnO3 thin film at around magnetic phase transition temperature
K. Maeda, T. Yoshimura, N. Fujimura
Japanese Journal of Applied Physics, 48(2009) 09KB05
http://jjap.jsap.jp/link?JJAP/48/09KB05/

● Effects of Mg doping on structural, optical, and electrical properties of CuScO2(0001) epitaxial films
Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura
Vacuum Surface Engineering, Surface Instrumentation & Vacuum Technology, 84(2009) 618-621
http://dx.doi.org/10.1016/j.vacuum.2009.06.023

● Magnetic properties of uniformly Ce-doped Si thin films with n-type conduction
T. Terao, K. Fujii, D. Shindo, T. Yoshimura, N.Fujimura
Japanese Journal of Applied Physics, 48 (2009) 033003
http://jjap.jsap.jp/link?JJAP/48/033003/

● Amorphous carbon film deposition for hydrogen barrier in FeRAM integration by radio frequency plasma chemical vapor deposition
T. Saito, K. Izumi, Y. Hirota, N. Okamoro, K. Kondo, T. Yoshimura, N. Fujimura
Electrochemical Society Transactions, 25(2009) 693-698
http://ecst.ecsdl.org/content/25/8/693

● Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques
Y. Kakehi, K. Satoh, T. Yotsuya, K. Masuko, T. Yoshimura, A. Ashida, N. Fujimura
Journal of Crystal Growth, 311(2009)  1117-1122
http://dx.doi.org/10.1016/j.jcrysgro.2008.11.060

● Spin-phonon coupling in multiferroic YbMnO3 studied by Raman scattering
H. Fukumura, N. Hasuike, H. Harima , K. Kisoda , K. Fukae , T. Yoshimura , N. Fujimura
JOURNAL OF PHYSICS-CONDENSED MATTER, 21 (2009) 064218
http://iopscience.iop.org/0953-8984/21/6/064218/

●Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method
Takeyasu Saito, Kaname Izumi, Yuichiro Hirota, Naoki Okamoto, Kazuo Kondo,Takeshi Yoshimura and Norifumi Fujimura
216th ECS Transactions, 25 (2009)693-698
http://ecst.ecsdl.org/content/25/8/693.abstract

 

Commentary, review

ZnMnO/ZnOヘテロ構造の作製とその磁気輸送特性
(Fabrication and magneto-transport properties of ZnMnO/ZnO heterostructures)
Keiichiro Masuko,Atsushi Ashida,Takeshi Yoshimura and Norifumi Fujimura
多元系機能材料研究会 平成21年度活動報告書.

 

Journal Papers 2008

● Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor
T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, and N. Fujimura
Japanese Journal of Applied Physics, 47 (2008) 8874-8879
http://jjap.jsap.jp/link?JJAP/47/8874/

● Effects of Oxygen Annealing on Dielectric Properties of LuFeCuO4
Y. Matsuo, M. Suzuki, Y. Noguchi, T. Yoshimura, N. Fujimura, K. Yoshi, N. Ikeda, S. Mori
Japanese Journal of Applied Physics, 47(2008) 8464-8467
http://jjap.jsap.jp/link?JJAP/47/8464/

● Electrical and optical properties of excess oxygen intercalated CuScO2(0001) epitaxial films prepared by oxygen radical annealing
Y. Kakehi, K. Satoh, T. Yotsuya, A. Ashida, T. Yoshimura and N. Fujimura
Thin Solid Films, 516(2008) 5785-5789
http://www.sciencedirect.com/science/article/pii/S0040609007017129

● Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si
D. Shindo, T. Yoshimura and N. Fujimura
Applied Surface Science, 254(2008) 6218-6221
http://www.sciencedirect.com/science/article/pii/S0169433208004455

● Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films
S. Sakamoto, T. Oshio, A. Ashida, T. Yoshimura and N. Fujimura
Applied Surface Science, 254(2008) 6248-6251
http://www.sciencedirect.com/science/article/pii/S0169433208004108

● Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Applied Physics, 103 (2008) 093717
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4947858&abstractAccess=no&userType=inst

● Magnetic and Dielectric Properties of Yb(Mn1-xAlx)O3 Thin Films
K. Fukae, T. Takahashi, T. Yoshimura and N. Fujimura
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 55(2008)  1056-1060
http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4524984

● Spin-dependent transport in a ZnMnO/ZnO heterostructure
K. Masuko, A. Ashida, T. Yoshimura and
N. Fujimura
Journal of Applied Physics, 103 (2008)07D124
http://scitation.aip.org/content/aip/journal/jap/103/7/10.1063/1.2837882

● Effects of Spontaneous and Piezoelectric Polarizations on Carrier Confinement at the Zn0.88Mn0.12O/ZnO Interface
K. Masuko, H. Sakiyama, A. Ashida, T. Yoshimura and N. Fujimura
Physica Status Solidi (c) 5(2008)  3107-3109
http://onlinelibrary.wiley.com/doi/10.1002/pssc.200779222/abstract

● Electro-Optic Property of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Physica Status Solidi (c) 5 (2008) 3110-3112
http://onlinelibrary.wiley.com/doi/10.1002/pssc.200779246/abstract

● Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO (0001) single-crystal substrates
K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Applied Physics, 103(2008) 043714
http://aip.scitation.org/doi/10.1063/1.2841056

● ZnO Thin Films Epitaxially Grown by Electrochemical Deposition Method with Constant Current
A. Ashida, A. Fujita, Y. Shim, K. Wakita and A. Nakahira
Thin Solid Films, 517(2008) 1461-1464
http://www.sciencedirect.com/science/article/pii/S0040609008010687

● ZnO Thin Films Prepared by the Electrochemical Method with Various Electrolytic Current
A. Fujita, A. Ashida and A. Nakahira
Transactions of the Materials Research Society of Japan, 33(2008) 1301-1304

● Raman Spectroscopy of ZnO Crystals under Microwave Irradiation
Atsushi Ashida, Tetsuro Tsujino, Yonggu Shim and Kazuki Wakita
Proceedings of Global Congress on Microwave Energy Application, 747-750 (2008)

 

Journal Papers 2007

● Low temperature growth of Si:Ce thin films with high crystallinity and uniform distribution of Ce grown by solid-source molecular beam epitaxy
T. Terao, Y. Nishimura, D. Shindo and N. Fujimura
Journal of Crystal Growth, 307(2007) 30-34
http://www.sciencedirect.com/science/article/pii/S0022024807005714

● Raman scattering studies on multiferroic YMnO3
H. Fukumura, S. Matsui, H. Harima, K. Kisoda, T. Takahashi, T. Yoshimura and N. Fujimura
Journal of Physics -Condensed Matter, 19 ,36(2007) 365239
http://iopscience.iop.org/0953-8984/19/36/365239

● Influence of Antiferromagnetic Ordering on Ferroelectric Polarization Switching of YMnO3 Epitaxial Thin Films
K. Maeda, T. Yoshimura and N. Fujimura
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 54, 12(2007) 2641-2644
http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4430056

● Effect of Bi substitution on the Magnetic and Dielectric Properties of Epitaxially-grown Fe0.3Zr0.7O3-δ Thin Films on SrTiO3 substrates
T. Matsui, S. Daido, N. Fujimura, T. Yoshimura, H. Tsuda and K. Morii
Journal of Physics and Chemistry of Solids, 68,8,(2007)  1515-1521
http://www.sciencedirect.com/science/article/pii/S0022369707001515

● Magnetic Frustration Behavior of Ferroelectric Ferromagnet YbMnO3 Epitaxial Films
N. Fujimura, T. Takahashi, T. Yoshimura and A. Ashida
Journal of Applied Physics, 101 (2007) 09M107
http://scitation.aip.org/content/aip/journal/jap/101/9/10.1063/1.2713214

● Multiferroic Behaviors of YMnO3 and YbMnO3 Epitaxial Films (INVITED PAPER)
N. Fujimura, N. Shigemitsu, T. Takahashi, A. Ashida and T. Yoshimura
Philosophical Magazine Letters, 87, 3-4(2007)  193-201
http://www.tandfonline.com/doi/abs/10.1080/09500830701250322

● The Comparison of the Growth Models of Silicon Nitride Ultra-Thin Films Fabricated Using Atmospheric Pressure Plasma and Radio Frequency Plasma
M. Nakae, R. Hayakawa, T.Yoshimura, A. Ashida, N. Fujimura and T. Uehara
Journal of Applied Physics, 101(2007)  023513
http://scitation.aip.org/content/aip/journal/jap/101/2/10.1063/1.2424501

● Preparation and the magnetic property of ZnMnO thin films on (000) ZnO Single Crystal Substrate
K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Magnetism and Magnetic Materials, 310(2007) e711-e713
http://www.sciencedirect.com/science/article/pii/S0304885306022530

● Magnetic Properties of Low Temperature Grown Si:Ce Thin Films on (001) Si Substrate
T. Terao, Y. Nishimura, D. Shindo, A. Ashida and N. Fujimura
Journal of Magnetism and Magnetic Materials, 310(2007)e726-e728
http://www.sciencedirect.com/science/article/pii/S0304885306020634

● Magnetic and Dielectric Properties of Yb(Mn1-xAlx)O3 Thin Films
K. Fukae, T. Takahashi, T. Yoshimura and N. Fujimura
Proceedings of the 2007 16th IEEE International Symposium on Applications of Ferroelectrics, 437 (2007)
http://www.sciencedirect.com/science/article/pii/S0304885306020634

● Influence of Antiferromagnetic Ordering on Ferroelectric Polarization Switching of YMnO3 Epitaxial Thin Films
K. Maeda, T. Yoshimura and N. Fujimura
Proceedings of the 2007 16th IEEE International Symposium on Applications of Ferroelectrics, 441(2007) http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4430056

● Conduction Characteristics of Charge Ordering Type Ferroelectrics,YFe2O4
K.Imamura, Y.Horibe, T.Yoshimura, N.Fujimura, S.Mori and N.Ikeda
Mater. Res. Soc. Symp. Proc. 966(2007) T07-27
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8160902

● Spin-coupled phonons in multiferroic YbMnO3 epitaxial films by Raman scattering
H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Takahashi, T.Yoshimura and N. Fujimura
PHONONS 2007 Journal of Physics: Conference Series 92 (2007) 012126
http://iopscience.iop.org/1742-6596/92/1/012126/

● Magnetic and Ferroelectric Properties of YMnO3 Epitaxial Thin Films
K. Maeda, T. Yoshimura and N. Fujimura
Materials Research Society Symposium Proceedings , 966E(2007) 0966-T03-01
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8160836&fulltextType=RA&fileId=S1946427400055020

● The Comparison of the Growth Models of Silicon Nitride Ultra-Thin Films Fabricated Using Atmospheric Pressure Plasma and Radio Frequency Plasma
M. Nakae, R. Hayakawa, T.Yoshimura, A. Ashida, T. Uehara and N. Fujimura
Journal of Applied Physics 101 (2007) 023513
http://scitation.aip.org/content/aip/journal/jap/101/2/10.1063/1.2424501

● Magnetic Frustration Behavior of Ferroelectric Ferromagnet YbMnO3 Epitaxial Films
N. Fujimura, T. Takahashi T. Yoshimura and A. Ashida
Journal of Applied Physics 101 (2007) 09M107
http://scitation.aip.org/content/aip/journal/jap/101/9/10.1063/1.2713214

● Preparation and the magnetic property of ZnMnO thin films on (000-1) ZnO single crystal substrate
K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Journal of Magnetism and Magnetic Materials 310(2007)e711-e713
http://www.sciencedirect.com/science/article/pii/S0304885306022530

Journal Papers 2006

● Electro-optical effect in ZnO:Mn thin films prepared by Xe sputtering
A. Ashida, T. Nagata and N. Fujimura
Journal of Applied Physics 99 (2006) 013509
http://scitation.aip.org/content/aip/journal/jap/99/1/10.1063/1.2150596

● Reaction of Si with excited nitrogen species in pure nitrogen plasma near atmospheric pressure R.Hayakawa, T.Yoshimura, A.Ashida, T.Uehara and N.Fujimura
Thin Solid Films 506-507(2006) 423-426
http://www.sciencedirect.com/science/article/pii/S0040609005013088

● Photoluminescence properties peculiar to the Mn-related transition in a lightly alloyed ZnMnO thin film grown by pulsed laser deposition
M . Nakayama, H . Tanaka, K . Masuko, T. Fukushima, A . Ashida, N . Fujimura
Applied Physics Letters 88(2006) 241908
http://scitation.aip.org/content/aip/journal/apl/88/24/10.1063/1.2209719

● Growth and Ferromagnetic Properties of Ferroelectric YbMnO3 Thin Films
T. Takahashi, T. Yoshimura and N. Fujimura
Jpn. J. Appl. Phys. 45(2006) 7329-7331
http://jjap.jsap.jp/link?JJAP/45/7329/

● Single-wall Carbon Nanotube Field Effect Transistors with Non-volatile Memory Operation
T. Sakurai, T. Yoshimura, S. Akita, N. Fujimura, Y.Nakayama
Jpn. J. Appl. Phys. 45(2006) L1036 -L1038
http://jjap.jsap.jp/link?JJAP/45/L1036/

● Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure
R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara, M. Tagawa and Y. Teraoka
Journal of Applied Physics 100 (2006) 073710
http://scitation.aip.org/content/aip/journal/jap/100/7/10.1063/1.2353781

● Effect of Additional Oxygen for the Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure
R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura and T. Uehara
Jpn. J. Appl. Phys., 45(2006)9025-9028
http://jjap.jsap.jp/link?JJAP/45/9025/

● Fabrication of YMnO3 Epitaxial Thin Films Films and the Magnetic-Ferroelectric Correlation Phenomena
K.Maeda, N.Shigemitsu,T.Yoshimura and N.Fujimura
Transactions of the Materials Research Society of Japan 31(2006) 185-188
http://sciencelinks.jp/j-east/list.php?id=000020061206A0225525&check_display.x=67&check_display.y=13

● Mn Doping Effects on Dielectric Properties of ZnO Epitaxial Films
T.oshio,A.Ashida,T.Yoshimura and N.fujimura
Transactions of the Materials Research Society of Japan 31(2006) 189-192
http://sciencelinks.jp/j-east/article/200612/000020061206A0225526.php

● The Nitridation Process of Silicon with Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 31(2006) 161-164
https://sciencelinks.jp/j-east/article/200612/000020061206A0225519.php

● Electric and Magnetic Properties of Ba(Co,Mn)O3-δ Epitaxial thin films
T. Inoue, T. Matsui, H.Tsuda, T. Yoshimura, N. Fujimura and K. Morii
Transactions of the Materials Research Society of Japan 31(2006)193-196
http://sciencelinks.jp/j-east/list.php?id=000020061206A0225527&check_display.x=57&check_display.y=10

● Fabrication of YMnO3 Epitaxial Thin Films and the Magnetic-Ferroelectric Correlation Phenomena
K. Maeda, N. Shigemitsu, T. Yoshimura and N. Fujimura
Proceeding, 2006 International Meeting for Future of Electron Devices, Kansai, (2006)
http://sciencelinks.jp/j-east/article/200612/000020061206A0225525.php

●Magnetic and ferroelectric properties of YMnO3 epitaxial thin films
Maeda, K., Yshimura, T., Fujimura, N.
Materials Research Society Symposium Proceedings, 966(2006)57-62
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8160836

 

Commentary, review

●強誘電体ゲートトランジスタ用薄膜
藤村紀文
マテリアルインテグレーション, 9 (2006).

●強誘電体電子デバイスの展望
吉村 武、藤村 紀文
金属学会セミナー・テキスト 非シリコン半導体の現状と展望(2006)

●Multiferroic phenomena in ferroelectric magnet
Norifumi FUJIMURA, Takeshi YOSHIMURA
OYO BUTURI Vol.75 No.6 p.713 (2006)
https://www.jsap.or.jp/ap/2006/06/ob750713-e.xml

●多結晶薄膜の形成
藤村 紀文
応用物理学会結晶工学分科会スクールテキスト第8版(2006)69-78

Journal Papers 2005

●Epitaxial growth of CuScO2 thin films on sapphire a-plane substrates by pulsed laser deposition
Y. Kakehi, K. Satoh, T. Yotsuya, S. Nakao, T. Yoshimura, A. Ashida and N. Fujimura
Journal of Applied Physics 97 (2005) 083535
http://scitation.aip.org/content/aip/journal/jap/97/8/10.1063/1.1868061

●Enhancement of ferromagnetic ordering in dielectric BaFe1−xZrxO3−d „x =0.5–0.8… single-crystal films by pulsed laser-beam deposition
T. Matsui, E. Taketani, N. Fujimura, H. Tsuda, and K. Morii
J. Appl.Phys 97 (2005)10M509
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5042290&abstractAccess=no&userType=inst

● Low-Temperature Growth and Characterization of Epitaxial YMnO3/Y2O3/Si MFIS Capacitors with Thinner Insulator Layer
K. Haratake, N. Shigemitsu, M.Nishijima, T. Yoshimura and N. Fujimura
Jpn J. Appl. Phys. 44(2005)6977-6980
http://jjap.jsap.jp/link?JJAP/44/6977/

● Influence of Space Charge of the Dielectric Properties of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 245-247

● Low Temperature Growth of YMnO3/Y2O3/Si Capacitor
K. Haratake, N. Shigemitsu, T. Yoshimura, A. Ashida and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 237-240

● Epitaxial Growth of ZnO Films on Ferroelectric YMnO3 Deposited by PLD
R. Arai, N. Shigemitsu, K. Masuko, T. Oshio, T. Yoshimura, A. Ashida, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)241-244

● Comparison of Reactivity of Exited Nitrogen Species Generated in RF Plasma and Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 225-227

● Low-Temperature Formation of Silicon Nitride Films using Nitrogen Plasma near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 217-220

● Electrical Characterization of YMnO3-based Metal-Ferroelectric-Insulator-Semiconductor Capacitor by Novel Method
T.Yoshimura, D Ito, K.Hratake, A. Ashida and N.Fujimura
Transactions of the Materials Research Society of Japan 30(2005)233-236

● Interface Characteristics of (Zn,Mn)O/ZnO grown on ZnO Substrate
A. Ashida, K. Masuko, T. Edahiro, T. Oshio and N. Fujimura
J. Crystal Growth, 275(2005) e2211-e2215
http://www.sciencedirect.com/science/article/pii/S0022024804018202

● Effects of electron irradiation on CuInS2 crystals
K. Abe, Y. Miyoshi, A. Ashida, K. Wakita , T. Ohshima, N. Morishita, T. Kamiya, S. Watase and M. Izaki
Jpn. J. Appl. Phys., 44, 1B (2005)718
http://jjap.jsap.jp/link?JJAP/44/718/

● Fabrication of Silicon Nitride Film using Pure Nitrogen Plasma Generated near Atmospheric Pressure for III-V Semiconductor Fabrication
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Materials Research Society Symposium Proceedings 831(2005) 671-676
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8000704

● Influence of Space Charge on the Dielectric Properties of ZnO:Mn Epitaxial Films
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)  245-247

● Epitaxial Growth of ZnO Films on Ferroelectric YMnO3 Films  Deposited by The PLD Method
R. Arai, N. Shigemitsu, K. Masuko, T. Oshio, T. Yoshimura, A. Ashida, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005) 241-244

● The Comparison of Reactivity of Active Nitrogen Species Generated in RF Plasma and Atmospheric Pressure Plasma
M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)  225-227

● Low-Temperature Formation of Silicon Nitride Films using Nitrogen Plasma near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura
Transactions of the Materials Research Society of Japan 30(2005)217-220

●Preparation and properties of ferroelectric-insulator-semiconductor junctions using YMnO3 thin films
N.Fujimura ,T.Yoshimura
Topics in Applied Physics,98, 5(Feb 2005)199-220
http://link.springer.com/chapter/10.1007/978-3-540-31479-0_11

●ZnMnO/ZnOヘテロ界面における二次元電子ガスの形成
益子 慶一郎、芦田 淳、大塩 武士、枝広 俊昭、藤村 紀文
応用電子物性分科会研究会会誌 第11巻第1号(2005)40-45

●マルチフェロイック材料の設計とデバイス応用
藤村 紀文
2005年7月22日応用物理学会結晶工学分科会123回テキスト(2005)33-40

●YMnO3薄膜の形成とマルチフェロイック物性
藤村 紀文、吉村 武
セラミックデータブック2005 工業と製品 Vol.33 No.87(2005)128-130

●Ferromagnetic and Dielectric Behavior of Mn-Doped BaCoO3
Tomohiro Inoue, Toshiyuki Matsui, Norifumi Fujimura, Hiroshi Tsuda, and Kenji Morii
IEEE Transactions on  Magnetics, 41 (Oct. 2005)10
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=01519351

●Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution
T. Matsui, E. Taketani, H. Tsuda, N. Fujimura, and K. Morii
Appl.Phys.Lett.86 (2005)082902
http://scitation.aip.org/docserver/fulltext/aip/journal/apl/86/8/1.1868887.pdf?expires=1386737759&id=id&accname=freeContent&checksum=2755F2D34041BE5D79C2094CED7D1D69

 

Academic book

●YMnO3薄膜の作成とマルチフェロイック物性
藤村紀文, 吉村武
セラミックデータブック2005 工業と製品, 33, 128-130 (2005)

Journal Papers 2004

● P-E measurements for ferroelectric gate capacitors
T. Yoshimura and N.Fujimura
Integrated Ferroelectrics 61(2004) 59-64
http://www.tandfonline.com/doi/abs/10.1080/10584580490458847

● Optical Propagation Properties of ZnO Films Grown on Sapphire Substrate
A. Ashida, H. Ohta, T. Nagata, Y. Nakano, N. Fujimura and T. Ito
J. Appl. Phys., 95(2004) 1673-1676
http://scitation.aip.org/content/aip/journal/jap/95/4/10.1063/1.1639143

● The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering
T. Nagata, A. Ashida, N. Fujimura and T. Ito
J. Appl. Phys, 95(2004) 3923-3927
http://scitation.aip.org/content/aip/journal/jap/95/8/10.1063/1.1682682

● Electro-Optic Effect In ZnO:Mn Thin Films
T. Nagata, A. Ashida, N. Fujimura and T. Ito
Journal of Alloys and Compounds 371(2004)  157-159
http://www.sciencedirect.com/science/article/pii/S0925838803011125

● Synthesis of Bi(FexAl1-x)O3 Thin Films by Pulsed Laser Deposition and Its Structural Characterization
M. Okada, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys., 43(2004) 6609-6612
http://jjap.jsap.jp/link?JJAP/43/6609/

● Pulsed-Laser-Deposited YMnO3 Epitaxial Films with Square Polarization-Electric Field Hysteresis Loop and Low-Temperature Growth
N. Shigemitsu, H. Sakata, D. Ito, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys. 43(2004)  6613-6616
http://jjap.jsap.jp/link?JJAP/43/6613/

● Formation of Silicon Oxynitride Films with Low Leakage Current using N2/O2 Plasma near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, and N. Fujimura
Jpn. J. Appl. Phys. 43(2004) 7853-7856
http://jjap.jsap.jp/link?JJAP/43/7853/

● Analysis of Nitrogen Plasma Generated by A Pulsed Plasma System near Atmospheric Pressure
R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, and N. Fujimura
J. Appl. Phys. 96(2004) 6094-6096
http://scitation.aip.org/content/aip/journal/jap/96/11/10.1063/1.1810202

● Photoluminescence of CuInSe2 Nanowires
K. Wakita, Y. Miyoshi, M. Iwai, H. Fujibuchi and A. Ashida
Material Research Society Symposium Proceedings 789(2004)55-58

● Investigation of Retention Properties for YMnO3 Based Metal/Ferroelectric/Insulator/ Semiconductor Capacitors
T. Yoshimura, D. Ito, H. Sakata, N. Shigemitu, K. Haratake, A. Ashida and N. Fujimura
Material Research Society Symposium Proceedings 784(2004) 479-484
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8001059

● Control of Ferroelectric property of YMnO3 Epitaxial Films by Magnetic Field
N. Fujimura, N. Shigemitsu, T. Yoshimura and A. Ashida
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 61 (2004)
http://sciencelinks.jp/j-east/article/200423/000020042304A0772817.php

● Formatoin of Two-Dimentional Electron Gas and the Magnetotransport Behavior ofZnMnO/ZnO Heterostructure
A. Ashida, T. Edahiro, K. Masuko, T. Oshio and N. Fujimura
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 85-87 (2004)

● Synthesis and properties of Bi(FexAl1-x)O3 Multi-Ferroic Thin Films
N. Fujimura, M. Okada, A. Ashida and Yoshimura
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 233-236 (2004)
http://sciencelinks.jp/j-east/article/200424/000020042404A0772857.php

●Effect of oxygen deficiencies on magnetic properties of epitaxial grown BaFeO3 thin films on (100) SrTiO3 substrates
Taketani, E., Matsui, T., Fujimura, N., Morii, K.
IEEE Transactions on Magnetics,40, 4 II(Jul 2004)2736-2738
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1325625

●Magnetic and Electric Properties of BaMO3(M:Co,Mn,Fe)Oxide
T.Inoue, T.matsui, M.Miyai, N.Fujimura, K.Morii
Proceedings of the 21st Sensor Symposium on Sensors, Micromachines, and Applied Systems, 67-70 (2004)
https://sciencelinks.jp/j-east/article/200423/000020042304A0772819.php

●New Field Effect Devices using Magnetic-Ferroelectric YMnO3/Diluted Magnetic Semiconductor Hetero-Junction
Norifumi Fujimura,Toshiyuju Matsui
The Murata Science Foundation Annual Report No.18 A21127 (2004)68-85

Journal Papers 2003

● Magnetic and Magneto-transport Properties of Solid Phase Epitaxially Grown Si:Ce Films
T. Yokota, N. Fujimura, T. Ito
J. Appl. Phys., 93(2003) 4045-4048
http://scitation.aip.org/content/aip/journal/jap/93/7/10.1063/1.1559436

● Ferroelectric Properties of YMnO3 Epitaxial Films for Ferroelectric-Gate Field Effect Transistors
D. Ito, N. Fujimura, T. Yoshimura, T. Ito
J. Appl. Phys., 93(2003)5563-5567
http://scitation.aip.org/content/aip/journal/jap/93/9/10.1063/1.1564862

● Ferromagnetic and Ferroelectric Behaviors of A Site Substituted YMnO3 Based Epitaxial Thin Films
N. Fujimura, D. Ito, H. Sakata T. Yoshimura, T. Yokota, T. Ito
J. Appl. Phys., 93(2003) 6990-6992
http://scitation.aip.org/content/aip/journal/jap/93/10/10.1063/1.1556165

● Formation of Two-Dimensional Electron Gas and the Magneto-Transport Behavior of ZnMnO/ZnO Heterostructure
T. Edahiro, N. Fujimura, T. Ito
J. Appl. Phys., 93(2003) 7673-7675
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5035225&abstractAccess=no&userType=inst

● The Effect of Carrier for Magnetic and Magneto-transport Properties of Si:Ce Films
T.Yokota, N.Fujimura, T.Wada, S. Hamasaki, T.Ito
J. Appl. Phys. 93(2003)7679-7681
http://scitation.aip.org/content/aip/journal/jap/93/10/10.1063/1.1556116

● Influence of Schottky and Poole-Frenkel emission on the retention property of YMnO3 based Metal/Ferroelectric/Insulator/Semiconductor capacitors
D. Ito, N.Fujimura, T.Yoshimura, T.Ito
J. Appl. Phys., 94(2003)4036-4041
http://scitation.aip.org/content/aip/journal/jap/94/6/10.1063/1.1601292

● Improvement of Surface Morphology and Dielectric Property of YMnO3 Films
H. Sakata, D. Ito, T. Yoshimura, A. Ashida and N. Fujimura
Jpn. J. Appl. Phys., 42(2003) 6003-6006
http://jjap.jsap.jp/link?JJAP/42/6003/

● Polarization Hysteresis Loops of Ferroelectric Gate Capacitors Measured by Sawyer-Tower Circuit
T. Yoshimura, N. Fujimura
Jpn. J. Appl. Phys., 42(2003)6011-6014
http://jjap.jsap.jp/link?JJAP/42/6011/

●Magnetic and dielectric properties of epitaxially grown BaFeO3 thin films on SrTiO3 single-crystal substrates
T.Matsui,H.Tanaka,E,Taketani,N.Fujimura, T.Ito, K.Morii
Journal of the Korean Physical Society,42, Issue SUPPL.,S1378(Apl,2003)

http://cat.inist.fr/?aModele=afficheN&cpsidt=14903131

●Magnetic properties of highly resistive BaFeO3 thin films epitaxially grown on SrTiO3 single-crystal substrates
T. Matsui, E. Taketani, N. Fujimura, T. Ito and K. Morii
J. Appl. Phys., 93(May 2003) 6993
http://scitation.aip.org/content/aip/journal/jap/93/10/10.1063/1.1556166

●Investigation of retention properties for YMnO3 based metal ferroelectric insulator semiconductor capacitors
T.Yoshimura, D.Ito, H.Sakata, N.Shigemitsu, K.Haratake, A.Ashida, N.Fujimura
Materials Research Society Symposium – Proceedings 784(2003)479-484
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8001059&fulltextType=RA&fileId=S1946427400096998

Journal Papers 2002

● The Progress of the YMnO3/Y2O3/Si System for a Ferroelectric Gate Field Effect Transistor
N. Fujimura,D. Ito,T. Ito
Ferroelectrics,271(2002) 229-234
http://www.tandfonline.com/doi/abs/10.1080/00150190211525

● Electro-optic Property of ZnO : X (X = Li,Mg) Thin Films
T. Nagata,T. Shimura,A. Ashida,N. Fujimura,T. Ito
Journal of Crystal Growth,237-239(2002)533-537
http://www.sciencedirect.com/science/article/pii/S0022024801019571

● Retention Property Analysis of Epitaxially Grown YMnO3/Y2O3/Si Capacitor
D. Ito,N. Fujimura,K. Kakuno,T. Ito
Ferroelectrics,271(2002)87-92
https://www.researchgate.net/publication/233344132

● Growth Process and Interfacial Structure of Epitaxial Y2O3/Si Thin Films Deposited by Pulsed Laser Deposition
K. Kakuno,D. Ito,N. Fujimura,T. Matsui,T. Ito
Journal of Crystal Growth,237 Part 1(2002) 487-491
http://www.sciencedirect.com/science/article/pii/S0022024801019492

● Thin Film Crystal Growth of BaZrO3 at Low Oxygen Partial Pressure
Y. Kitano,T. Matsui,N. Fujimura,K. Morii,T. Ito
Journal of Crystal Growth,243 Part 1(2002) 164-169
http://www.sciencedirect.com/science/article/pii/S002202480201480X

● Ce Concentration Dependence on the Magnetic and Transport Properties of Ce Doped Si Epitaxial Films Prepared by Molecular Beam Epitaxy
T. Yokota,N. Fujimura,T. Wada,S. Hamasaki,T. Ito
Journal of Applied Physics, 91-10(2002) 7905-7907
http://scitation.aip.org/content/aip/journal/jap/91/10/10.1063/1.1451878

● Electro-optic Effect in Epitaxial ZnO:Mn Thin Films
T. Nagata,A. Ashida,Y. Takagi,N. Fujimura,T. Ito
Japanese Journal of Applied Physics,41(2002)6916-6918
http://jjap.jsap.jp/link?JJAP/41/6916/

● Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor Si1-xCex films
T. Yokota,N. Fujimura,T. Wada,S. Hamasaki,T. Ito
Applied Physics Letters,81(2002) 4023-4025
http://scitation.aip.org/content/aip/journal/apl/81/21/10.1063/1.1524030

● 焼却煤じんの溶融処理
大西忠一,宮武和孝,原田浩希,黒谷臣知仁
高温学会誌,28-4(2002)181-186

● Thermit Reaction Applied to Waste Treatment.
H. Harada,T. Ohnishi,K. Miyatake,N. Takeda,M. Takaoka
Proc. of 2nd Intern. Conf. on Combustion, Incineration/Pyrolysis and Emission. , 505-512(2002)

●Structural, dielectric, and magnetic properties of epitaxially grown BaFeO3 thin films
on (100) SrTiO3 single-crystal substrates
T. Matsui, H. Tanaka, N. Fujimura, T. Ito, H. Mabuchi, and K. Morii
Appl. Phys. Lett. 81 (2002)2764
http://scitation.aip.org/content/aip/journal/apl/81/15/10.1063/1.1513213

●Crystal Growth and Interfacial Characterization of Dielectric BaZrO3 Thin Films
on Si Substrates
Toshiyuki MATSUI, Yasuhiro KITANO, Norifumi FUJIMURA, Kenji MORII and Taichiro ITO
Jpn. J. Appl. Phys.  41 (2002) 6639–6642
http://jjap.jsap.jp/link?JJAP/41/6639/

●Effect of A-site substitution on the magnetic and dielectric behaviors of YMnO3 based ferroelectric thin films
N.Fujimura, H.Sakata, D.Ito, T.Yokota, T.Ito
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics,page219; Nara; Japan; (28 May 2002 )
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1195909

●Siの磁性
藤村 紀文
マテリアルインテグレーション 15巻5号(2002)19-24

●YMnO3/Y2O3/Siエピタキシャル構造を用いたMFISキャパシタの物性
藤村 紀文、吉村 武、伊藤 大輔、伊藤 太一郎
電気学会 電子材料研究会資料 EFM-02-15(2002年6月)39-44

●The Effect of Leakage Current on the Retention Property of YMnO3 Based MFIS Capacitor
Daisuke Ito, Norifumi Fujimura& Taichiro Ito
Integrated Ferroelectrics ,49,1(2002)41-49
http://www.tandfonline.com/doi/pdf/10.1080/713718364

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