15th International Conference of Thin Films (ICTF-15)
-Nov.2011,　Kyoto-
■Preparation and the Properties of Electronic Ferroelectrics YbFe₂O₄ Epitaxial Films　Norifumi Fujimura

15th US-Japan Seminar on Dielectric and Piezoelectric Ceramics
-Kagoshima Japan Nov.2011-
■Direct piezoelectric property of BiFeO₃ epitaxial thin films　　T. Yoshimura

2011 MRS Spring Meeting
-San Francisco USA　2011-
■ Polarization Switching Behavior of Magnetoferroelectric YMnO₃ Epitaxial Films at around the Magnetic Phase Transition　TemperatureT.Yoshimura
■ Influence of crystal system on ferroelectric properties of (001) BiFeO₃ epitaxial thin films　K. Ujimoto

The 3rd international symposium on innovations in advanced materials for optics & electronics
-Toyama, Japan　October 2010-
■ Characterization of direct piezoelectric properties of PZT films for vibration energy harvesting
T. Yoshimura

3rd international congress on ceramics
-Osaka, Japan　October 2010-
■ Charactrization of direct piezoelectric effect for vibration energy harvesting　T. Yoshimura
■ ZnO crystal growth on micro electrode by electrochemical deposition method　Y. Kondo
■ ZnO thin films grown by electrochemical deposition method with pulsed electrolytic current and its electrical conductivity
A. Ashida
■ Effect of lattice misfit strain on crystal system and ferroelectric property of BiFeO₃ epitaxial thin films
K. Ujimoto
■ Characterization of electric transport of field effect transistor with TiO₂ nanotube channel　M. Ishii

2010 International Conference on Solid State Devices and Materials (SSDM2010)
-Tokyo, Japan　September 2010-
■ Impedance analysis of controlled-polarization-type ferroelectric-gate TFT using RC distributed constant circuit
T. Fukushima

17th international workshop on oxide electronics
-Awaji, Japan　September 2010-
■ Device characterization of controlled polarization type ferroelectric gate TFT　T. Yoshimura

17th international conference on ternary and multinary compounds
-Baku, Azerbaijan　September 2010-
■ Initial growth process in the electrochemical deposition of ZnO　A. Ashida

The 8th Japan-Korea Conference on Ferroelectrics
-Himeji, Japan　2010-
■ Electronic transport property of YbMnO₃/ZnO heterostructure　H. Yamada
■ Direct piezoelectricity of PZT films and application to vibration energy harvesting H.Miyabuchi
■ Polarization switching behavior of magnetoferroelectric RMnO₃ epitaxial films at around the magnetic phase transition temperature（Invited）　T. Yoshimura

12th international conference on modern materials and technologies
–Montecatini Terme, Italy, June　2010-
■Novel spintronics application of ZnO based DMS.　　N. Fujimura （Invited）
■Polarization switching of YMnO₃ thin films at around magnetic transition temperature.　
　K. Maeda

The 16th International Conference on Crystal Growth(ICCG-16)
-Beijing, China　June 2010-
■ Influence of target surface microstructure on the morphological and electrical properties of pulsed laser deposited BiFeO₃ epitaxial thin films　K. Ujimoto
■ Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films　T. Nakamura

2010 Taiwan-Japan bilateral technology interchange project “Workshop on transparent conductive oxide thin films　for electronics and optics in green energy
-Taoyuan, Taiwan　2010-
■ Controlled polarization type thin film transistors using ferroelectric/polar semiconductor interface
N. Fujimura

12th International Ceramics Congress (CIMTEC2010)
-Toscana, Italy　May 2010-
■ Novel spintronics application of ZnO based DMS　　　N. Fujimura
■ Polarization switching of YMnO₃ thin films at around magnetic transition temperature　　K. Maeda

11th joint magnetism and magnetic materials (MMM) intermag conference
-Washington DC, America, January, 2010-
■The effects of aluminum doping for the magneto-transport property of Si:Ce thin films.　　D. Shindo

6th international symposium on transparent oxide thin films for electronics and optics (TOEO-6)
-Apl.2009, Tokyo-
■Control of cathodic potential for deposition of ZnO by constant current electrochemical method
N. Nouzu
■Fabrication and magneto-transport properties of Zn0.88Mn0.12O/ZnO　　K. Masuko
■Surface morphology of homoepitaxial ZnO thin films grown on Zn-polar ZnO substrates
T. Nakamura

Material Research Soc. Fall Meeting
-USA Boston, December, 2008-
■ Spin Dependent Transport in ZnMnO/ZnO Hetero-structure(invited)　N. Fujimura

5th International Workshop on ZnO and Related Materials
-Michigan, USA, September, 2008-
■ Electron Transport Properties of ZnMnO/ZnO Modulation-doped Heterostructures.　　K. Masuko

Global Congress on Microwave Energy Application 2008
-Sep.2008, Otsu,Japan-
■ Raman Spectroscopy of ZnO Crystals under Microwave Irradiation.A. Ashida

The 7th Korea-Japan Conference Ferroelectricity (KJC-07)
-Jeju, Korea, August, 2008-
■ Epitaxial Growth of Charge Ordering Type Ferroelectrics YbFe₂O₄. K. Hirose
■ Ferroelectric and Magnetic Properties of (0001)YbMnO₃ Epitaxial Thin Films. T. Yoshimura
■ Polarization Switching Characteristics of YMnO₃ Thin Film at around Magnetic Phase Transition Temperature. T. Yoshimura

2nd International Symposium on the Manipulation of Advanced Smart Materials
-May,2008, Hyogo,Japan-
■ ZnO Thin Films Grown by Electrochemical Deposition Method with Constant Current.　　A.Ashida

Material Research Soc. Fall Meeting
–Boston ,USA, December, 2007-
■Multiferroic Behaviors of Ferroelectric Ferromagnet, YbMnO₃ Epitaxial Films. (Invited)
N. Fujimura

5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
-Nov.2007, Tokyo-
■ Dielectric properties of ferroelectric/DMS heterointerface using YMnO₃ and Ce doped Si
Daisuke Shindo
■ Effect of Electrical Degenerated Layer on the Carrier Transport Property of ZnO Thin Films on YSZ substrate　　Shinya Sakamoto

52nd Conference on Magnetism and Magnetic Materials (MMM 2007)
-Tampa, Florida November , 2007-
■ Spin-dependent Transport in ZnMnO/ZnO Heterostructure　　Keiichiro Masuko

The 34th International Symposium on Compound Semiconductors (ISCS 2007)
-Oct.2007, Kyoto-
■ Magnetic and Magneto-transport Properties of ZnMnO/ZnO Heterostructure　　　Keiichiro Masuko
■ Electro-Optic Properties of ZnO:Mn Epitaxial Thin Film　　　Takeshi Oshio

14th International Workshop on Oxide Electronics
-Jeju island, Korea, October, 2007-
■ Controlled polarization type FET with a Ferroelectric gate and a polar semiconductor
Norifumi Fujimura

Handai Nanoscience and Nanotechnology International Symposium
-Sep.2007,  Osaka-
■ Effect of spin polarization on the electron transport in modulation-doped ZnMnO/ZnO heterostructure　　Keiichiro Masuko
■ Magnetic Properties of Si:Ce Thin Films with High Ce Concentration　　Takemi Terao

The 16th International Symposium on the Application of Ferroelectrics 2007 (ISAF2007)
-May,2007, Nara,Japan-
■ Magnetic and Dielectric Properties of Yb(Mn1-xAlx)O₃ Thin Films　　Keisuke Fukae
■ Influence of Antiferromagnetic Ordering on Ferroelectric Polarization Switching of YMnO₃ Epitaxial Thin Films　　Kazuhiro Maeda

10th joint MMM/Intermag conference
-Jan. 2007, Baltimore, USA-
■ Effects of the Ce Concentration and the Carrier Concentration on the Magnetic Properties of Low Temperature grown Si:Ce Thin Films 　　Takemi Terao
■ Magnetic Frustration Behavior of Ferroelectric Ferromagnet, YbMnO₃ Epitaxial films
Norifumi Fujimura

Material Research Society Fall Meeting
-Boston, USA, November,2006-
■ Multiferroic Behaviors of Ferroelectric Ferromagnet, YbMnO₃ Epitaxial Film. Norifumi Fujimura
■ Polarization Control Type FET with a Ferroelectric Gate and a Polar Semiconductor. Norifumi Fujimura ■ Conduction Characteristics of Charge Ordering Type Ferroelectrics, YFe₂O₄-δ. Ken Imamura
■ Magnetic and Ferroelectric Properties of YMnO₃ Epitaxial Thin Films. Kazuhiro Maeda

13th International Workshop on Oxide Electronics
-Ischia, Italy, October, 2006-
■ Cross-Correlation of Ferroelectric Ferromagnet, YbMnO₃ Epitaxial Films. Norifumi Fujimura
■ Controlled Polarization Type FET with a Ferroelectric Gate and a Polar Semiconductor
Norifumi Fujimura
■ Mn Concentration Dependence of Optical Property of ZnMnO Thin Films. Tadahiro Fukushima

The 6th Japan-Korea Conference on Ferroelectrics(第６回日韓強誘電体会議JKC-FE06）
-Sendai, Japan, August,2006-
■ Electrical Conduction Properties of Charge Ordering Type Ferroelectrics YFe₂O₄-δ . Ken Imamura
■ Nonvolatile Memory Operation of Ferroelectric-Gate ZnO Channel Thin-film Transistors
Takeshi Yoshimura

The 17th International Conference on Magnetism
-Kyoto, Japan, August,2006-
■ Magnetic Properties of Low Temperature Grown Si:Ce Thin Films on (001) Si Substrate.
Takemi Terao
■ Preparation og ZnMnO Thin Films on ZnO Single Crystal Substrate (000-1) and its Magnetic Properties. Keiichiro Masuko

IEEE International Symposium on the Applications of Ferroelectrics(ISAF2006)
-NorthCarolina, USA, July, 2006-
■ Fabrication and Electrical Characterization of ZnO/YMnO₃ Ferroelectric Gate Piezoelectric-Semiconductor Thin-film Transistors. Takeshi Yoshimura

International Conference on Integrated Ferroelectrics
-Waikiki, USA, April, 2006-
■ Multi-Ferroic Properties of YMnO₃ Epitaxial Films. NorifumiFujimura
■ Ferroelectric Gate Transistors using YMnO₃/ZnO Gate Structure. NorifumiFujimura

2006 International Meeting for Future of Electron Devices, Kansai
-Kyoto, Japan, April, 2006-
■ Fabrication of YMnO₃ Epitaxial Thin Films and　the Magnetic-Ferroelectric Correlation Phenomena.　　Kazuhiro Maeda

12th US-Japan Seminar on Dielectric and Piezoelectric Ceramics
-Maryland, USA, November,2005-
■ Synthesis and Structural Characterization of Bi(FexAl1-x)O₃ Thin Films.　　Takeshi Yoshimura
■ Fabrication of Ferroelectric-gate Transistors using YMnO₃ thin films.　Takeshi Yoshimura

The 2005 IEEE International Magnetics Conference (Intermag2005)
-Nagoya, Japan, April, 2005-
■ Magnetic properties of low temperature grown Si:Ce thin films on (001) Si substrate by molecular beam epitaxy.　　Takemi Terao

Prospects in Magnetic Oxide Thin Films and Heterostructures
-Fontevraud, France, April, 2005-
■ ZnO Magneto-Capacitance of YMnO₃ Epitaxial Films.　　Norifumi Fujimura
■ Fabrication and transport properties of ZnMnO/ZnO Hetero-structure with atomically flat interface.　Keiichirou Masuko

The 1st Imagine International Forum on venture-business
-Dec. 2004, Osaka, Japan-
■ Synthesis of Bi(Fe,Al)O₃ Thin Films by Pulsed Laser Deposition Method　　Morihiro Okada
■ Fabrication of ZnMnO/ZnO Hetero-Structure with Atomically Flat Interface　　Keiichirou Masuko

MRS 2004 fall meeting
-Nov. 2004, Boston, USA-
■ Multi-Ferroic Properties of YMnO₃ Epitaxial Films　　Norifumi Fujimura
■ Fabrication of Silicon Nitride Film using Pure Nitrogen Plasma Generated near Atmospheric Pressure
for III-V Semiconductor Fabrication　　Ryoma Hayakawa

11th International Workshop on Oxide Electronics
-Nov. 2004 Hakone, Japan-
■ Multi-ferroic Properties of YMnO₃ Epitaxial Films　　Norifumi Fujimura

The 5th Korea-Japan Conference on Ferroelectricity
-Aug. 2004, Seoul, Korea-
■ Multi-ferroic Properties of YMnO₃ Epitaxial Films　　Norifumi Fujimura

Dong-Eui University
–August, Busan, Korea、2004-
■Novel Transistors using multiferroic materials (Invited)　　　　　N.Fujimura

Yeungnam University
–August, Dongdaegu, Korea 2004-
■Novel Transistors using multiferroic materials (Invited)　　　　N.Fijimura

The 14th International Conference on Crystal Growth in Conjunction with
The 12th International Conference on Vapor Growth and Epitaxy
-Aug. 2004, Grenoble, France-
■ Interface Characteristics of ZnO/ZnMnO Grown on ZnO Substrate　　Atsushi Ashida

7th APCPST(Asia Pacific Conference on Plasma Science and Technology) and
17th SPSM(Symposium on Plasma Science for Materials)
-June, 2004, Fukuoka, Japan-
■ Reaction of Si with Excited Nitrogen Species in Pure Nitrogen Plasma near Atmospheric Pressure
Ryoma Hayakawa

2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology
-May, 2004, Tokyo, Japan-
■ Formation of Silicon Oxynitride Films with Low Leakage Current using N₂/O₂ Plasma near Atmospheric Pressure　　
Ryoma Hayakawa

Airforce Office of Science Research Zinc Oxide Workshop
-May. 2004, Maui, USA-
■ Magneto-Transport Properties of 2DEG Formed at ZnMnO/ZnO Interface (Invited)　Norifumi Fujimura

American Physical Society (APS) March Meeting 2004
-Mar. 2004, Montreal, Canada-
■ Anomaly in Magneto-Transport Properties in MBE Grown Ce doped Si Epitaxial Films
Norifumi Fujimura
■ Anomaly in Ferroelectric Property of YMnO₃ at around Neel Temperature　　Norifumi Fujimura

2004 Magnetism & Magnetic Materials Annual Conference Proceedings
-Jan. 2004, Anaheim, USA,-
■ Electric-Field Control of Magnetic Structure of Si:Ce Films in MOS Capacitors　　Norifumi Fujimura

4th Asian Meeting on Ferroelectrics (AMF-4)
-Dec. 2003, Bangalore, India-
■ Present Status of Ferroelectric Gate Field Effect Transistors (Invited)　　Norifumi Fujimura

MRS 2003 fall meeting
-Nov. 2003, Boston, USA-
■ Magnetic and Ferroelectric Behaviors of Multi-Ferroic RMnO₃ Thin Films.　　Norifumi Fujimura
■ Investigation of Retention Properties for YMnO₃ Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors　　Takeshi Yoshimura

10th International Workshop on Oxide Electronics
-Sept. 2003 Augsburg, Germany-
■ Proposal of YMnO₃ Based Ferroic Gate FETs　　Norifumi Fujimura

The 10th European Meeting on Ferroelectricity
-Aug. 2003 Cambridge, UK-
■ Origin of the Retention Property of YMnO₃ Based MFIS Capacitors.　　Norifumi Fujimura
■ D-E Measurements for Ferroelectric Gate Capacitors.　　Takeshi Yoshimura

47th Annual Conference on Magnetism & Magnetic Materials
-Nov. 2002 Florida, USA-
■ Ferromagnetic and Ferroelectric Behaviors of A Site Substituted YMnO₃ Based Epitaxial Thin Films　　Norifumi Fujimura
■ The effect of carrier for magnetic and magneto-transport properties of Si:Ce films.　　Takeshi Yokota ■ Formation of two dimensional electron gas of ZnMnO/ZnO heterostructure.　　Toshiaki Edahiro

European Materials Research Society FALL MEETING 2002
– Warsaw, Poland Oct. 2002-
■ Electro-Optic Effect in ZnO:Mn Thin Films　　Takahiro Nagata

The 2nd Intern. Conf. on Combustion, Incineration/Pyrolysis and Emission
-Sep.2002, Cheju,Korea-
■Thermite Reaction Applied to Waste Treatment.　　H. Harada，T. Ohnishi

International Joint Coference on Application of Ferroelectrics 2002
-May,2002,　Nara, Japan-
■ Growth Process and Interfacial Structure of Epitaxial Y₂O₃/Si Thin Films Deposited by Pulsed Laser Deposition　　Norifumi Fujimura
■ The Effect of Leakage Current for the Retention Property in the MFIS capacitor　　Daisuke Ito
■ Crystal Growth and Interface Characterization of Dielectric BaZrO₃ Thin Films on Si Substrates　　Yasuhiro Kitano
■ Effect of A-site Substitution on the Magnetic and Dielectric behaviors of YMnO₃ Based Ferroelectric Thin Films.　　Norifumi Fujimura
■ Electro-optic Effect in Epitaxial ZnO:Li Thin Films　　Takahiro Nagata