●General Thermal Texturization Process of MoS₂ for Efficient Electrocatalytic
Hydrogen Evolution Reaction
D.Kiriya,P.Lobaccaro, H. Y. Y. Nyein, P. Taheri, M. Hettick, H. Shiraki, C. M. Sutter-Fella,
P. Zhao, W. Gao, R. Maboudian, J. W. Ager, A. Javey
Nano Letters, 16, 4047-4053 (2016)
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b00569

●Superacid passivation of crystalline silicon surfaces
J.Bullock, D. Kiriya, N. Grant, A. A. Zacatzi, M. Hettick, T. Kho, P. Phang,
H. C. Sio, D. Yan, D. Macdonald, R. M. Wallace, A. Cuevas, A. Javey
ACS Applied Materials Interfaces, 8, 24205-24211 (2016)
http://pubs.acs.org/doi/abs/10.1021/acsami.6b07822

●High Luminescence Efficiency in MoS₂ Grown by Chemical Vapor Deposition
M.Amani, R. A. Burke, X. Ji, P. Zhao, D.-H. Lien, P. Taheri, G. H. Ahn,
D. Kiriya, J. W. Ager III, E.
ablonovitch, J. Kong, M. Dubey, A. Javey
ACS Nano. 10, 6535-6541 (2016)
http://pubs.acs.org/doi/abs/10.1021/acsnano.6b03443

●High efficiency piezoelectric MEMS vibration energy harvesters using
(100) oriented BiFeO₃ Films
M.Aramaki, K. Izumi, T. Yoshimura, S. Murakami, and N. Fujimura
Proc. of the 30th IEEE International Conference on Micro Electro Mechanical Systems, 829-832 (2016)

●Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition
Atsushi Ashida, Shunsuke Sato, Takeshi Yoshimura, Norifumi Fujimura,
Journal of Crystal Growth, in press
https://doi.org/10.1016/j.jcrysgro.2016.11.023

●Ferroelectric properties of (Pb,La)(Zr,Ti)O₃ capacitors employing Al-doped ZnO top electrodes
prepared by pulsed laser deposition under different oxygen pressures
Y.Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima
Japanese Journal of Applied Physics, 55, 06JB04(2016)
https://www.researchgate.net/publication/303595631

●Al: ZnO Top Electrodes Deposited with Various Oxygen Pressures for Ferroelectric
(Pb, La)(Zr,Ti)O₃ Capacitors
Y.Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima
Electronics Letters, 52, 230−232 (2016)
https://www.researchgate.net/publication/287801699

●Fabrication of Doped Pb(Zr,Ti)O₃ Capacitors on Pt Substrates with Different Orientations
R.Tamano, T. Amano, Y. Takada, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima
Electronics Letters, 52 (16), 1399-1401 (2016)
https://www.researchgate.net/publication/303982232

●Evaluatioion of Deuterium ion Profile in (Pb,La)(Zr,Ti)O₃ Capacitors Structures with Conductive Oxide Top Electrode by Time of Flight Secondary Ion Mass Spectrometry
Y. Takada, R. Tamano, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima
and R. Shishido
Proc. 2016 IEEE ISAF/ECAPD/PFM, 1−4 (2016).

●Comparative Study of Ferroelectric (K,Na)NbO₃ Thin Films Pulsed Laser Deposition on Platinum Substrates with Different Orientation
R.Tamano, Y. Takada, N. Okamoto. T. Saito, K. Higuchi, A. Kitajima, T. Yoshimura, and N. Fujimura
Proc. 2016 IEEE ISAF/ECAPD/PFM, 1−4 (2016)
http://ieeexplore.ieee.org/document/7578063/

●Comparative Study of Hydrogen – and Deuterium – induced Degradation of Ferroelectric (Pb,La)(Zr,Ti)O₃ Capacitors Using Time of Flight Secondary Ion Measurement
Y.Takada, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, and R. Shishido
IEEE Trans. Ultrason. Ferroelectr. Freq. Control, 63, 1668-1673 (2016)
http://ieeexplore.ieee.org/document/7524024/

●Thickness dependence of piezoelectric properties of BiFeO₃ films fabricated using rf magnetron sputtering system
Masaaki Aramaki, Kento Kariya, Takeshi Yoshimura, Shuichi Murakami, and Norifumi Fujimura
Japanese Journal of Applied Physics 55, 10TA16 (2016)
http://doi.org/10.7567/JJAP.55.10TA16

●Effects of (Bi_1/2,Na_1/2)TiO₃ on the electrical properties of BiFeO₃-based thin films
Jin Hong Choi, Takeshi Yoshimura, and Norifumi Fujimura
Japanese Journal of Applied Physics 55, 10TA17 (2016)
http://doi.org/10.7567/JJAP.55.10TA17

●Direct measurements of electrocaloric effect in ferroelectrics using thin-film thermocouples
Yuji Matsushita, Atsushi Nochida, Takeshi Yoshimura, and Norifumi Fujimura
Japanese Journal of Applied Physics 55, 10TB04 (2016)
http://doi.org/10.7567/JJAP.55.10TB04

●Large enhancement of positive magnetoresistance by Ce doping in Si epitaxial thin films
Yusuke Miyata, Kazuya Ueno, Yoshihiko Togawa, Takeshi Yoshimura, Atsushi Ashida, and Norifumi Fujimura
Applied Physics Letters 109, 112101 (2016)
http://dx.doi.org/10.1063/1.4962393

●Fabrication of (Ba,La)SnO₃  Films on (111) SrTiO₃  Substrate
Kohei MIURA,Ryo KASHIMOTO,Takeshi YOSHIMURA,Atsushi ASHIDA,Norifumi FUJIMURA
Journal of the Society of Materials Science, Japan Vol.65,No.9,pp638-641(2016)
https://www.jstage.jst.go.jp/article/jsms/65/9/65_638/_pdf

●Lowering the growth temperature of strongly-correlated YbFe₂O₄ thin films prepared by pulsed laser deposition
Ryo Kashimoto, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura
Thin Solid Films 614, 44-46 (2016)
http://dx.doi.org/10.1016/j.tsf.2016.04.044

●Low temperature formation of highly resistive ZnO films using nonequilibrium N₂/O₂ plasma generated near atmospheric pressure
Yukinori Nose, Takeshi Yoshimura, Atsushi Ashida, Tsuyoshi Uehara, Norifumi Fujimura
Thin Solid Films 616, 415-418 (2016)
http://dx.doi.org/10.1016/j.tsf.2016.09.009

●Novel chemical vapor deposition process of ZnO films using nonequilibrium N₂ plasma
generated near atmospheric pressure with small amount of O₂ below 1%
Yukinori Nose, Takeshi Yoshimura, Atsushi Ashida, Tsuyoshi Uehara, and Norifumi Fujimura
Journal of Applied Physics 119, 175302 (2016)
http://dx.doi.org/10.1063/1.4948326

●Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric
Yusuke Miyata, Takeshi Yoshimura, Atsushi Ashida, and Norifumi Fujimura
Japanese Journal of Applied Physics 55, 04EE04 (2016)
http://doi.org/10.7567/JJAP.55.04EE04

●Reliability of the properties of (Pb,La)(Zr,Ti)O₃ capacitors with non–noble metal oxide electrodes stored in an H₂ atmosphere
Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, and R. Shishido
MRS Advances 1, 369−374 (2016)
https://www.researchgate.net/publication/295848348

Academic book

●Novel Ferroelectric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs
Norifumi Fujimura, Takeshi Yoshimura
Topics in Applied Physics 131, Ferroelectric-Gate Field Effect Transistor Memories, 111-138(2016)
http://dx.doi.org/10.1007/978-94-024-0841-6_6