International Conferences

category

International Conference 2012

International Union of Materials Research Societies – International Conference on Electronic Materials 2012
-Kanagawa, Japan, September, 2012-
Direct piezoelectric properties of strain engineered BiFeO3 epitaxial films   K. Ujimoto
Characterization of ferroelectric MEMS vibration energy harvester    T. Yoshimura

International Workshop on Zinc Oxide and Related Materials
-NICE France Sepember 2012-
■ Effect of the polarity on the initial state of interface formation in organic semiconductor/ZnO heterostructures
T.Nakamura

IUMRS-ICEM2012
-Sep.2012, Yokohama,Japan-
■ Characterization of Ferroelectric MEMS Vibration Energy Harvester T. Yoshimura
■Direct piezoelectric properties of strain engineered BiFeO3 epitaxial films K.Ujimoto

European Materials Research Society 2012 Fall Meeting
-Warszawa, Poland, September, 2012-
■Nano-sized nucleus formation and growth of ZnO crystals by the electrochemical process A.Ashida

International Symposium on Application of Ferroelectrics
-ISAF2012 Aveiro Portugal Jul 2012-
■Growth Temperature and Thickness Dependences of Crystal and Micro Domain Structures of BiFeO3 Epitaxial Films 
K. Ujimoto

The 9th Japan-Korea Conference on Ferroelectrics
-KJC-FE09 Ulsan Korea Jly 2012-
■ Effects of La substitution for BiFeO3 epitaxial thin films K. Wakazono
■ The effect of crystallization process of P(VDF/TrFE) thin film on the ferroelectric properties Yoshiki Yachi

MRS Spring Meeting
-San Francisco USA Apr 2012-
■ Characterization of Direct Piezoelectric properties of BiFeO3 films for Vibration Energy Harvesting
T. Yoshimura
■ Effect of Ferroelectric Polarization on Electronic Transport Properties in Ferroelectric Gate Thin Film Transistor with ZnO Channel  H. Yamada
■ Investigation of Gas Sensing Characteristics of TiO2 Nanotube Channel Field Effect Transistor
M. Ishii

4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
-Nogoya,Japan March 2012-
■ Low temperature growth of ZnO films using atmospheric pressure N2/O2plasma Y. Nose